MX6506A [MICROSEMI]
Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-14;
| 型号： | MX6506A |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-14 CD 二极管 |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6506A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays with common cathode are multiple, discrete,
isolated junctions fabricated by a planar process and mounted in a 10-PIN package for
use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by
directing them to the positive side of the power supply line (see figure 1). This circuit
application is further complimented by the 1N6507 (separate data sheet) that has a
common anode. An external TVS diode may be added between the positive supply
line and ground to prevent overvoltage on the supply rail. They may also be used in
fast switching core-driver applications. This includes computers and peripheral
equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as
well as decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability. This is a
result of fewer pick and place operations, smaller footprint, smaller weight, and
elimination of various discrete packages that may not be as user friendly in PC board
mounting.
14-PIN Ceramic DIP
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
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High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
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Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 4.0 pF
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
Switching Speeds less than 20 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX6506A for a JANTX screen.
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
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14-PIN Ceramic DIP
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VBR Reverse Breakdown Voltage 60 V min (Note 1 & 2)
IO Continuous Forward Current of 300 mA (Note 1 & 3)
IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
400 mW Power Dissipation per Junction @ 25oC
600 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +150oC
Weight 2.05 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of package
Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.0 mW/oC above +25oC
MAXIMUM
REVERSE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
RECOVERY TIME
FORWARD
trr
RECOVERY TIME
I = IR = 200 mA
i = 20 mA
rr
F
V
F1
Ct
t
fr
I = 100 mA
I
VR = 0 V
F = 1 MHz
F
R1
I = 500 mA
F
R = 100 ohms
(Note 1)
VR = 40 V
L
PART
NUMBER
V
μA
pF
ns
ns
6506A
1
0.1
4.0
40
20
NOTE 1: Pulsed: PW = 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2007
3-27-2007
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
6506A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VBR
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
Forward Surge Current: The peak forward surge current at a specified pulse width
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads
VF
IR
IFSM
Ct
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+VCC)
I/O Port
GND (or -VCC)
Steering Diode Application
FIGURE 1
Copyright © 2007
3-27-2007
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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