MXSAC22E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | MXSAC22E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 局域网 二极管 |
| 文件： | 总4页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
- High Reliability controlled devices
- Thru hole mounting
500 W Low Capacitance
Transient Voltage Suppressor
- Unidirectional construction
- Selections for 5 V to 50 V standoff voltages (VWM)
LEVELS
M, MA, MX, MXL
DEVICES
MSAC5.0 thru MSAC50, e3
FEATURES
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 500 W @ 10/1000 µs
Low capacitance rating of 30 pF
Unidirectional low-capacitance device (for bidirectional see Figure 6)
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
.
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
DO-41
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
.
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines up to Level 3 Waveform 4 and Level 1 Waveform 5A
in RTCA/DO-160F (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per
ARINC 429, Part 1, par 2.4.1.1)
.
.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: MSAC5.0 to MSAC50
Class 2: MSAC5.0 to MSAC45
Class 3: MSAC5.0 to MSAC22
Class 4: MSAC5.0 to MSAC10
.
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance
Class 1: MSAC5.0 to MSAC26
Class 2: MSAC5.0 to MSAC15
Class 3: MSAC5.0 to MSAC7.0
MAXIMUM RATINGS
.
Peak Pulse Power dissipation at 25 °C: 500 W at @ 10/1000 µs with impulse repetition rate
(duty factor) of 0.01 % max*
.
.
.
.
Operating and Storage temperature: -65 ºC to +150 °C
Steady-state power dissipation: 2.5 W @ TL = 75 °C (lead Length = 3/8”)
Clamping Speed (0 volts to VBR min.) less than 5 nanoseconds.
Solder temperatures: 260 °C for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff
voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the
TVS element.
Also see Figures 5 and 6 for further protection details in rated peak pulse power for
unidirectional and bidirectional configurations respectively
RF01018 Rev A, October 2010
High Reliability Product Group
Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
.
.
Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per MIL-
STD-750, method 2026
.
.
.
.
.
Body marked with part number
Cathode indicated by band.
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL standard per EIA-296 (add “TR” suffix to part number)
Weight: 0.7 grams (approximate)
PACKAGE DIMENSIONS
DO-41
SYMBOLS & DEFINITIONS
Symbol
VWM
PPP
Definition
Symbol
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
IPP
VC
Peak Pulse Current
Clamping Voltage
Breakdown Current for VBR
VBR
ID
IBR
RF01018 Rev A, October 2010
High Reliability Product Group
Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25oC
MICROSEMI
PART
NUMBER
REVERSE BREAKDOWN
MAXIMUM MAXIMUM
STANDBY CLAMPING
CURRENT VOLTAGE
VC
MAXIMUM
PEAK
PULSE
CURRENT
RATING
(Note 2)
MAXIMUM
CAPACITANCE
WORKING
INVERSE
BLOCKING
VOLTAGE
INVERSE
BLOCKING
LEAKAGE
CURRENT
PEAK
STAND-
OFF
VOLTAGE
(Note 1)
VOLTAGE
INVERSE
BLOCKING
VOLTAGE
V
@ I
BR
BR
I
D
@V
1.0mA
WM
@ I = 5.0A
P
V
(BR)
@ O Volts
pF
V
WIB
@ V
WIB
V
PIB
Volts
Volts
Min.
V
I
Volts
Volts
WM
A
PP
I
IB
µA
Volts
5.0
6.0
7.0
8.0
8.5
10
12
15
18
22
Amps
44
41
38
36
34
29
25
20
15
14
11.1
8.6
6.8
5.8
MSAC5.0
MSAC6.0
MSAC7.0
MSAC8.0
MSAC8.5
MSAC10
MSAC12
MSAC15
MSAC18
MSAC22
MSAC26
MSAC36
MSAC45
MSAC50
7.60
7.90
8.33
8.89
9.44
11.10
13.30
16.70
20.00
24.40
28.90
40.0
300
300
300
100
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
11.2
12.6
13.4
14.0
16.3
19.0
23.6
28.8
35.4
42.3
60.0
77.0
88.0
30
30
30
30
30
30
30
30
30
30
30
30
30
30
75
75
75
75
75
75
75
75
75
75
75
75
150
150
10
100
100
100
100
100
100
100
100
100
100
100
100
200
200
10
10
10
10
10
10
10
10
10
10
10
10
10
26
36
45
50
50.00
55.50
Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or greater than the dc or
continuous peak operating voltage level.
Note 2: Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
GRAPHS
t
w
– Pulse width
Figure 1
RF01018 Rev A, October 2010
High Reliability Product Group
Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS Contd.
TL – Lead Temperature - °C
t –time – msec
Figure 2
Figure 3
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional
low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In
applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low
capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low
capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. The Microsemi recommended
rectifier part number is the “LCR60” for the application in Figure 5. If using two (2) low capacitance TVS devices in anti-parallel for
bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also
provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
Figure 4
Figure 5
Figure 6
TVS with internal
Low Capacitance
Diode
Optional Unidirectional
configuration (TVS and separate
rectifier diode in parallel)
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
RF01018 Rev A, October 2010
High Reliability Product Group
Page 4 of 4
相关型号：
MXSAC22E3TR
Trans Voltage Suppressor Diode, 500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MICROSEMI
MXSAC22TR
Trans Voltage Suppressor Diode, 500W, 22V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2
MICROSEMI
MXSAC26
Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2
MICROSEMI
MXSAC26E3
Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MICROSEMI
MXSAC26E3TR
Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MICROSEMI
MXSAC26TR
Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2
MICROSEMI
MXSAC36
Trans Voltage Suppressor Diode, 500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2
MICROSEMI
MXSAC36E3
Trans Voltage Suppressor Diode, 500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MICROSEMI
©2020 ICPDF网 联系我们和版权申明