NES4401C [MICROSEMI]
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, DIE;
| 型号： | NES4401C |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, DIE 晶体管 |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Back to Bipolar Small Signal
ECHNICAL ATA
.023F GEOMETRY
SURFACE MOUNT
NPN SMALL SIGNAL
TRANSISTOR DIE
NES4401C
SURFACE MOUNT
NPN SMALL-SIGNAL
TRANSISTOR DIE
1. Chip size.....................................… 23 x 23 mils ± 2 mils
2. Chip thickness............................… 10 ? 1.5 mils
3. Top metal................................…… Aluminum 15,000Å minimum, 18,000Å nominal
4. Back metal..................................… A. Al/Ti/Ni/Ag 15kÅ/5kÅ/10kÅ/10kÅ
B. Gold 2.5kÅ minimum, 3.0kÅ nominal
C. Eutectic Die Mount – No metal - Standard
5. Glassivation……………………….
Si3N4 2k minimum, 2.2k nominal
6. Backside.....................................…. Collector
7. Bonding pad...............................… B = 4.2 x 4.2 mils, E = 4.2 x 4.2 mils
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10.0 ?Adc, IE = 0
V
60
40
Vdc
Vdc
Vdc
(BR)CBO
Collector-Emitter Breakdown Voltage (1)
IC = 10.0 mAdc, IB = 0
V
(BR)CEO
Emitter-Base Breakdown Voltage
IE = 10.0 ?Adc, IC = 0
V
(BR)EBO
6.0
Collector-Base Cutoff Current
VCB = 50 Vdc, IE = 0
ICBO
10
10
?Adc
?Adc
VCB = 50 Vdc, IE = 0; TA = 1500C
Emitter-Base Cutoff Current
VEB = 3.5 Vdc, IC = 0
Collector Cutoff Current
VCE = 35 Vdc, VEB = 0.4 Vdc
IEBO
ICE
100
100
?Adc
?Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
Back to Bipolar Small Signal
NES4401C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) con’t
Characteristics
Symbol
Min
Max
Unit
ON CHARACTERISTICS
Forward Current Transfer Ratio
IC = 0.1 mAdc, VCE = 1.0 Vdc
IC = 1.0 mAdc, VCE = 1.0 Vdc
hFE
20
40
IC = 10 mAdc, VCE = 1.0 Vdc
80
IC = 150 mAdc, VCE = 1.0 Vdc (1)
IC = 500 mAdc, VCE = 1.0 Vdc (1)
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc (1)
IC = 500 mAdc, IB = 50 mAdc (1)
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc (1)
IC = 500 mAdc, IB = 50 mAdc (1)
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Small-Signal Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
100
40
300
0.4
1.0
Vdc
Vdc
VCE(
)
sat
0.9
1.2
VBE(
sat)
100
2.0
hfe
?hfe?
Cobo
Cibo
MHz
p?
8.0
30
VCB = 10 Vdc, 100 kHz ? f ? 1.0 MHz
Input Capacitance
VEB = 2.0Vdc, 100 kHz ? f ? 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
p?
VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc
Turn-Off Time
VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB1 = 15 mAdc
(1) Pulse Test: Pulse Width ? 300 ?s. Duty Cycle ? 2.0%
45
ns
ns
ton
300
toff
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
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