NSLC350 [MICROSEMI]

Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;

NSLC350


型号：	NSLC350
厂家：	Microsemi
描述：	Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 晶体管
文件：	总1页 (文件大小：24K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

This Material Copyrighted By Its Respective Manufacturer

相关型号：

NSLC420

Power Field-Effect Transistor, 2.5A I(D), 500V, 3.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

MICROSEMI

NSLC430

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

MICROSEMI

NSLC440

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | LLCC

ETC

NSLC450

Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

MICROSEMI

NSLC9130

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12A I(D) | LLCC

ETC

NSLC9140

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 19A I(D) | LLCC

ETC

NSLC9230

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | LLCC

ETC

NSLC9240

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | LLCC

ETC

NSM10AJBI0R24

RES, RADIAL, WIREWOUND, 0.24ohm, 500WV, 5% +/-TOL, -300, 300PPM TC

YAGEO

NSM10AJW-100R

Fixed Resistor, Wire Wound, 10W, 100ohm, 500V, 5% +/-Tol, 5135

YAGEO

NSM10AJWI0R13

RES, RADIAL, WIREWOUND, 0.13ohm, 500WV, 5% +/-TOL, -300, 300PPM TC

YAGEO

NSM10AJWI11R

RES,RADIAL,WIREWOUND,11 OHMS,500WV,5% +/-TOL,-300,300PPM TC,5135 CASE

YAGEO

©2020 ICPDF网联系我们和版权申明