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元器件品牌
PPHR36F120AE3
[MICROSEMI]
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-254, 3 PIN;
元器件型号:
PPHR36F120AE3
生产厂家:
MICROSEMI CORPORATION
描述和应用:
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-254, 3 PIN
局域网 栅 晶体管
PDF文件:
总1页 (文件大小:59K)
下载文档:
下载PDF数据表文档文件
型号参数:PPHR36F120AE3参数
查看货源
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PPHR55F60AE3
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PPHR57L120A
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PPHR57L120AE3
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PPHR70L60AE3
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-254, 3 PIN
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156
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PPHX60F60A
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-254, 3 PIN
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PPHX60F60AE3
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-254, 3 PIN
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156
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MICROSEMI
PPHZ52F120A
Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, TO-254, 3 PIN
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156
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MICROSEMI
PPHZ52F120AE3
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