RT130KP295CA [MICROSEMI]

Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2;
RT130KP295CA
型号: RT130KP295CA
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

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RT130KP275CV, RT130KP275CA,  
RT130KP295CV, RT130KP295CA, e3  
AIRCRAFT AC POWER BUS PROTECTION  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
Microsemi’s RT130KP275 and RT130KP295 bidirectional 130 kW  
Transient Voltage Suppressors (TVSs) protects 120 volt ac airborne  
electronic equipment from harsh lightning per RTCA/DO-160E Section 22  
and is compatible with Section 16 for 180 volt ac 100 ms highline surges  
(paragraph 16.5.2.3.1b). Microsemi also offers a broad spectrum of other  
TVS products to meet your needs.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Symmetrical bidirectional TVS construction  
Pin injection protection per RTCA/DO-160E Table 22-2  
up to Level 5 for Waveform 4 (6.4/69 µs) and Level 3  
for Waveform 5A (40/120 μs) at 70oC  
Two Working Standoff Voltages of 275 V and 295 V  
Available as either low clamp with “CV” suffix or normal  
clamping features with “CA” suffix.  
Compatible with “abnormal surge voltage” as  
described in 16.5.2.3.1b of RTCA/DO-160E  
Suppresses transients up to 130 kW @ 6.4/69 µs  
The very low clamping with “CV” suffix is designed for  
low clamping protection of 400V transistors, IGBTs  
and MOSFETs in off-line switching power supplies.  
Fast response with less than 5 ns turn-on time.  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X), surge (3X) in  
each direction, 24 hours HTRB in each direction, and post  
test (VZ and IR)  
The normal clamp device with “CA” suffix is for use in  
less-sensitive applications including RFI/EMI filters  
and general across-the-line protection.  
Consult Factory for other voltages with similar Peak  
Options for screening in accordance with MIL-PRF-19500  
for JAN JANTX, JANTXV, and JANS are also available by  
adding MQ, MX, MV, or MSP prefixes respectively to part  
numbers  
Pulse Power capabilities.  
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance for Class 1,2, 3 and 4  
Secondary lightning protection per IEC61000-4-5 with  
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
2 Ohms source impedance for Class 2 and 3  
Consult Factory for other voltages with similar Peak  
RoHS Compliant devices available by adding “e3” suffix  
Pulse Power capabilities  
MAXIMUM RATINGS  
MECHANICAL & PACKAGING  
Steady-state power dissipation: 7 W @ TA = 25oC  
CASE: Molded Epoxy (meets UL 94V-0 requirements)  
FINISH: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating solderable per MIL-STD-750,  
method 2026  
Peak Pulse Power (PPP) at 25oC: 130 kW at 6.4/69 µs  
per waveform in Figure 8 (derate per Figure 2)  
Repetition rate: 0.01% max.  
Polarity: No band required for bidirectional  
Operating & storage temperatures: -55oC to +150oC  
Temperature coefficient of voltage: +0.100%/oC max  
Solder Temperatures: 260oC for 10 s maximum  
MARKING: Manufacturers logo and part number  
(add prefix MA, MQ, MX, etc., for screened parts)  
Package dimensions: See last page  
ELECTRICAL PARAMETERS @ 25oC Devices are Bi-directional  
Peak Pulse  
Current  
IPP @ 6.4/69 μs  
(Note 2)  
Working  
Standoff  
Voltage  
VWM  
Maximum  
Standby  
Current  
ID @ VWM  
μA  
Minimum  
Breakdown  
Voltage  
Maximum  
Clamping  
Voltage  
Breakdown  
Current  
I(BR)  
MICROSEMI PART  
NUMBER  
VBR @ I(BR)  
VC @ IPP (Note 1)  
V max  
Volts  
mA  
Volts  
Amps  
RT130KP275CV  
RT130KP275CA  
RT130KP295CV  
RT130KP295CA  
275  
275  
295  
295  
5
5
5
5
300  
300  
300  
300  
5
5
5
5
400  
445  
410  
460  
292  
292  
282  
282  
NOTE 1: See MicroNote 108 for lower Clamping Voltage performance at reduced IP values relative to IPP and PPP ratings and Figure 1.  
NOTE 2: Also equivalent to 90 and 87 Amps (40 kW) respectively at a longer impulse of 10/1000 μs (see Figure 1) with clamping voltages  
shown. Also see other equivalent peak pulse power performance levels for aircraft waveforms on page 3 for this device.  
Copyright © 2005  
12-22-2005 REV C  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
RT130KP275CV, RT130KP275CA,  
RT130KP295CV, RT130KP295CA, e3  
AIRCRAFT AC POWER BUS PROTECTION  
S C O T T S D A L E D I V I S I O N  
GRAPHS  
NOTE: This PPP vs. Time graph allows the designer to use these  
parts over a broad power spectrum using the guidelines illustrated  
in App Note 104 on Microsemi’s website. Aircraft transients are  
described with exponential decaying waveforms. For suppression  
of square waveforms, derate power and current to 66% of that for  
exponential decay.  
tp – Pulse Time – sec.  
FIGURE 1  
TL Lead Temperature oC  
FIGURE 2  
Peak Pulse Power vs. Pulse Time  
To 50% of Exponentially Decaying Pulse  
POWER DERATING  
INSTALLATION  
TVS devices used across power lines are  
Correct  
Wrong  
subject to relatively high magnitude surge  
currents and are more prone to adverse  
parasitic inductance effects in the mounting  
leads. Minimizing the shunt path of the lead  
inductance and their V= -Ldi/dt effects will  
optimize the TVS effectiveness. Examples  
of optimum installation and poor installation  
are illustrated in figures 3 through figure 6.  
FIGURE 3  
FIGURE 5  
Figure  
3
illustrates minimal parasitic  
inductance with attachment at end of device.  
Inductive voltage drop is across input leads.  
Virtually no “overshoot” voltage results as  
illustrated with figure 4.  
The loss of  
effectiveness in protection caused by  
excessive parasitic inductance is illustrated  
in figures 5 and 6. Also see MicroNote 111  
for further information on “Parasitic Lead  
Inductance in TVS”.  
FIGURE 4  
FIGURE 6  
Copyright © 2005  
12-22-2005 REV C  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
RT130KP275CV, RT130KP275CA,  
RT130KP295CV, RT130KP295CA, e3  
AIRCRAFT AC POWER BUS PROTECTION  
S C O T T S D A L E D I V I S I O N  
t
t – time  
t – time  
t - Time  
Note: frequency is 1MHz  
FIGURE 7 – Waveform 3  
FIGURE 8 – Waveform 4  
FIGURE 9 – Waveform 5A  
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 μs. Equivalent peak pulse power for the RT130KP275CA and  
RT130KP295CA at each of the pulse widths represented in RTCA/DO-160E for wave forms 3, 4 and 5A (above) have been determined referencing  
Figure 1 herein as well as Application Notes 104 and 120 (found on Microsemi’s website) and are listed below.  
WAVEFORM  
NUMBER  
PULSE WIDTH  
PEAK PULSE  
POWER  
μs  
kW  
580  
130  
98  
3
4
5A  
4
6.4/69  
40/120  
Note: High current fast rise-time transients of 250 ns or less can more than triple the VC from parasitic inductance effects (V= -Ldi/dt) compared to the  
clamping voltage shown in the initial Electrical Characteristics on page 1 as also described in Figures 5 and 6 herein.  
DIMENSIONS  
Copyright © 2005  
Microsemi  
Page 3  
12-22-2005 REV C  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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