RT130KP295CA [MICROSEMI]
Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2;型号: | RT130KP295CA |
厂家: | Microsemi |
描述: | Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2 局域网 二极管 |
文件: | 总3页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RT130KP275CV, RT130KP275CA,
RT130KP295CV, RT130KP295CA, e3
AIRCRAFT AC POWER BUS PROTECTION
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
Microsemi’s RT130KP275 and RT130KP295 bidirectional 130 kW
Transient Voltage Suppressors (TVSs) protects 120 volt ac airborne
electronic equipment from harsh lightning per RTCA/DO-160E Section 22
and is compatible with Section 16 for 180 volt ac 100 ms highline surges
(paragraph 16.5.2.3.1b). Microsemi also offers a broad spectrum of other
TVS products to meet your needs.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
Symmetrical bidirectional TVS construction
• Pin injection protection per RTCA/DO-160E Table 22-2
up to Level 5 for Waveform 4 (6.4/69 µs) and Level 3
for Waveform 5A (40/120 μs) at 70oC
Two Working Standoff Voltages of 275 V and 295 V
Available as either low clamp with “CV” suffix or normal
clamping features with “CA” suffix.
• Compatible with “abnormal surge voltage” as
described in 16.5.2.3.1b of RTCA/DO-160E
•
•
•
Suppresses transients up to 130 kW @ 6.4/69 µs
• The very low clamping with “CV” suffix is designed for
low clamping protection of 400V transistors, IGBTs
and MOSFETs in off-line switching power supplies.
Fast response with less than 5 ns turn-on time.
Optional 100% screening for avionics grade is available
by adding MA prefix to part number for added 100%
temperature cycle -55oC to +125oC (10X), surge (3X) in
each direction, 24 hours HTRB in each direction, and post
test (VZ and IR)
• The normal clamp device with “CA” suffix is for use in
less-sensitive applications including RFI/EMI filters
and general across-the-line protection.
• Consult Factory for other voltages with similar Peak
•
Options for screening in accordance with MIL-PRF-19500
for JAN JANTX, JANTXV, and JANS are also available by
adding MQ, MX, MV, or MSP prefixes respectively to part
numbers
Pulse Power capabilities.
• Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance for Class 1,2, 3 and 4
• Secondary lightning protection per IEC61000-4-5 with
•
•
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
2 Ohms source impedance for Class 2 and 3
• Consult Factory for other voltages with similar Peak
RoHS Compliant devices available by adding “e3” suffix
Pulse Power capabilities
MAXIMUM RATINGS
MECHANICAL & PACKAGING
•
•
Steady-state power dissipation: 7 W @ TA = 25oC
• CASE: Molded Epoxy (meets UL 94V-0 requirements)
• FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750,
method 2026
Peak Pulse Power (PPP) at 25oC: 130 kW at 6.4/69 µs
per waveform in Figure 8 (derate per Figure 2)
•
•
•
•
Repetition rate: 0.01% max.
• Polarity: No band required for bidirectional
Operating & storage temperatures: -55oC to +150oC
Temperature coefficient of voltage: +0.100%/oC max
Solder Temperatures: 260oC for 10 s maximum
• MARKING: Manufacturers logo and part number
(add prefix MA, MQ, MX, etc., for screened parts)
• Package dimensions: See last page
ELECTRICAL PARAMETERS @ 25oC Devices are Bi-directional
Peak Pulse
Current
IPP @ 6.4/69 μs
(Note 2)
Working
Standoff
Voltage
VWM
Maximum
Standby
Current
ID @ VWM
μA
Minimum
Breakdown
Voltage
Maximum
Clamping
Voltage
Breakdown
Current
I(BR)
MICROSEMI PART
NUMBER
VBR @ I(BR)
VC @ IPP (Note 1)
V max
Volts
mA
Volts
Amps
RT130KP275CV
RT130KP275CA
RT130KP295CV
RT130KP295CA
275
275
295
295
5
5
5
5
300
300
300
300
5
5
5
5
400
445
410
460
292
292
282
282
NOTE 1: See MicroNote 108 for lower Clamping Voltage performance at reduced IP values relative to IPP and PPP ratings and Figure 1.
NOTE 2: Also equivalent to 90 and 87 Amps (40 kW) respectively at a longer impulse of 10/1000 μs (see Figure 1) with clamping voltages
shown. Also see other equivalent peak pulse power performance levels for aircraft waveforms on page 3 for this device.
Copyright © 2005
12-22-2005 REV C
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
RT130KP275CV, RT130KP275CA,
RT130KP295CV, RT130KP295CA, e3
AIRCRAFT AC POWER BUS PROTECTION
S C O T T S D A L E D I V I S I O N
GRAPHS
NOTE: This PPP vs. Time graph allows the designer to use these
parts over a broad power spectrum using the guidelines illustrated
in App Note 104 on Microsemi’s website. Aircraft transients are
described with exponential decaying waveforms. For suppression
of square waveforms, derate power and current to 66% of that for
exponential decay.
tp – Pulse Time – sec.
FIGURE 1
TL Lead Temperature oC
FIGURE 2
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
POWER DERATING
INSTALLATION
TVS devices used across power lines are
Correct
Wrong
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the mounting
leads. Minimizing the shunt path of the lead
inductance and their V= -Ldi/dt effects will
optimize the TVS effectiveness. Examples
of optimum installation and poor installation
are illustrated in figures 3 through figure 6.
FIGURE 3
FIGURE 5
Figure
3
illustrates minimal parasitic
inductance with attachment at end of device.
Inductive voltage drop is across input leads.
Virtually no “overshoot” voltage results as
illustrated with figure 4.
The loss of
effectiveness in protection caused by
excessive parasitic inductance is illustrated
in figures 5 and 6. Also see MicroNote 111
for further information on “Parasitic Lead
Inductance in TVS”.
FIGURE 4
FIGURE 6
Copyright © 2005
12-22-2005 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
RT130KP275CV, RT130KP275CA,
RT130KP295CV, RT130KP295CA, e3
AIRCRAFT AC POWER BUS PROTECTION
S C O T T S D A L E D I V I S I O N
t – time
t – time
t - Time
Note: frequency is 1MHz
FIGURE 7 – Waveform 3
FIGURE 8 – Waveform 4
FIGURE 9 – Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 μs. Equivalent peak pulse power for the RT130KP275CA and
RT130KP295CA at each of the pulse widths represented in RTCA/DO-160E for wave forms 3, 4 and 5A (above) have been determined referencing
Figure 1 herein as well as Application Notes 104 and 120 (found on Microsemi’s website) and are listed below.
WAVEFORM
NUMBER
PULSE WIDTH
PEAK PULSE
POWER
μs
kW
580
130
98
3
4
5A
4
6.4/69
40/120
Note: High current fast rise-time transients of 250 ns or less can more than triple the VC from parasitic inductance effects (V= -Ldi/dt) compared to the
clamping voltage shown in the initial Electrical Characteristics on page 1 as also described in Figures 5 and 6 herein.
DIMENSIONS
Copyright © 2005
Microsemi
Page 3
12-22-2005 REV C
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号:
RT130KP295CAE3
Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MICROSEMI
RT130KP295CV
Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2
MICROSEMI
RT130KP295CVE3
Trans Voltage Suppressor Diode, 130000W, 295V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MICROSEMI
©2020 ICPDF网 联系我们和版权申明