SC2X100SDA120J [MICROSEMI]
Rectifier Diode,;型号: | SC2X100SDA120J |
厂家: | Microsemi |
描述: | Rectifier Diode, |
文件: | 总7页 (文件大小:1081K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MSC2X101/100SDA120J Dual Silicon Carbide Schottky Barrier Diode
Product Overview
The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the
performance over silicon diode solutions while lowering the total cost of ownership for high-voltage
applications. MSC2X101/100SDA120J are dual 1200 V, 100 A SiC SBD devices in a SOT-227 package.
Figure 1 • Parallel MSC2X101SDA120J
Figure 2 • Anti-parallel MSC2X100SDA120J
Features
The following are key features of the MSC2X101SDA120J and MSC2X100SDA120J devices:
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No reverse recovery
Low forward voltage
Low leakage current
Avalanche-energy rated
RoHS compliant
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Isolated voltage to 2500 V
Benefits
The following are benefits of the MSC2X101SDA120J and MSC2X100SDA120J devices:
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High switching frequency
Low switching losses
Low noise (EMI) switching
Higher reliability systems
Increased system power density
Direct mounting to the heat sink (isolated package)
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053-4109 MSC2X101/100SDA120J Datasheet Revision A
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Product Overview
Applications
The MSC2X101SDA120J and MSC2X100SDA120J devices are designed for the following applications:
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Power factor correction (PFC)
Anti-parallel diode
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Switch-mode power supply
Inverters/converters
Motor controllers
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Freewheeling diode
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Switch-mode power supply
Inverters/converters
Snubber/clamp diode
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Device Specifications
Device Specifications
This section shows the specifications for the MSC2X101SDA120J and MSC2X100SDA120J devices.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per diode for the MSC2X101SDA120J and
MSC2X100SDA120J devices. TC = 25 °C, unless otherwise specified.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
V
VR
IF
Maximum DC reverse voltage
Maximum DC forward current
1200
100
TC = 90 °C
A
The following table shows the thermal and mechanical characteristics of the MSC2X101SDA120J and
MSC2X100SDA120J devices.
Table 2 • Thermal and Mechanical Characteristics
Symbol
Characteristics
Min
Typ
Max
Unit
°C/W
V
RΘJC
Junction-to-case thermal resistance
0.26
0.38
VISOLATION
RMS voltage
2500
–55
(50 Hz–60 Hz sinusoidal waveform from
terminals to mounting base for 1 minute)
TJ, TSTG
Operating junction and storage tempera-
ture range
175
°C
Wt
Package weight
1.03
29.2
10
oz
g
Mounting torque, M4 screw
lbf-in
N.m
1.1
053-4109 MSC2X101/100SDA120J Datasheet Revision A
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Device Specifications
Electrical Performance
The following table shows the static characteristics per diode of the MSC2X101SDA120J and
MSC2X100SDA120J devices.
Table 3 • Static Characteristics Per Diode
Symbol
Characteristics
Test Conditions
Min
Typ
1.5
2.1
30
Max
Unit
VF
Diode forward voltage
IF = 100 A
TJ = 25 °C
TJ = 175 °C
TJ = 25 °C
TJ = 175 °C
1.8
V
IRM
Reverse leakage current
VR = 1200 V
VR = 600 V
400
μA
500
448
492
364
QC
CJ
Total capacitive charge
Junction capacitance
nC
pF
f = 1 MHz, VR = 400 V
f = 1 MHz, VR = 800 V
053-4109 MSC2X101/100SDA120J Datasheet Revision A
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Device Specifications
Typical Performance Curves
This section shows the typical performance curves for the MSC2X101SDA120J and MSC2X100SDA120J
devices.
Figure 3 • Maximum Transient Thermal Impedance
Figure 5 • Capacitance vs. Reverse Voltage
Figure 4 • Forward Current vs. Forward Voltage
053-4109 MSC2X101/100SDA120J Datasheet Revision A
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Package Specification
Package Specification
This section shows the package specification of the MSC2X101SDA120J and MSC2X100SDA120J devices.
Package Outline Drawing
The following figure illustrates the SOT-227 package outline of the MSC2X101SDA120J and MSC2X100SDA120J
devices. The dimensions in the figure below are in millimeters and (inches).
Figure 6 • Package Outline Drawing
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Legal
Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information
contained in this publication is provided for the sole purpose of designing with and using Microsemi
products. Information regarding device applications and the like is provided only for your convenience
and may be superseded by updates. Buyer shall not rely on any data and performance specifications or
parameters provided by Microsemi. It is your responsibility to ensure that your application meets with
your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS
OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY,
PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.
IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR
CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION
OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE
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ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF
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buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any
Microsemi intellectual property rights unless otherwise stated.
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053-4109 | May 2020 | Released
053-4109 MSC2X101/100SDA120J Datasheet Revision A
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