SD1146 [MICROSEMI]

RF & MICROWAVE TRANSISTORS; 射频与微波晶体管
SD1146
型号: SD1146
厂家: Microsemi    Microsemi
描述:

RF & MICROWAVE TRANSISTORS
射频与微波晶体管

晶体 晶体管 射频 微波
文件: 总4页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SD1146  
RF & MICROWAVE TRANSISTORS  
R F P R O D U C T S D I V I S I O N  
PRODUCT PREVIEW  
DESCRIPTION  
KEY FEATURES  
The SD1146 is a 12.5 V Class C epitaxial silicon NPN planar  
transistor designed primarily for UHF communications. This device  
utilizes improved metallization to achieve infinite VSWR at rated  
operating conditions.  
!"470 MHz  
!"12.5 Volts  
!"Efficiency 60%  
!"Common Emitter  
!"P  
OUT = 10 W Min.  
IMPORTANT:  
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
!"G  
P = 6.0 dB Gain  
APPLICATIONS/BENEFITS  
!"UHF Mobile  
Applications  
C)  
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°  
Symbol  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Parameter  
Value  
36  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
16  
V
36  
V
4.0  
V
2.0  
A
Power Dissipation  
Junction Temperature  
Storage Temperature  
37.5  
W
°C  
°C  
PDISS  
TJ  
+200  
-65 to +150  
TSTG  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
4.7  
°C/W  
Copyright 2000  
Microsemi  
Page 1  
MSC1613.PDF 2000-11-26  
RF Products Division  
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855  
SD1146  
RF & MICROWAVE TRANSISTORS  
R F P R O D U C T S D I V I S I O N  
PRODUCT PREVIEW  
STATIC ELECTRICAL SPECIFICATIONS (T  
= 25°C)  
CASE  
SD1146  
Symbol  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
I
I
I
V
36  
16  
V
V
V
mA  
mA  
BVCES  
BVCEO  
BVEBO  
ICBO  
C = 200 mA  
C = 200 mA  
E = 4 mA  
BE = 0 V  
I
I
I
I
4.0  
C = 0 mA  
E = 0 mA  
C = 0 mA  
C = .5 A  
V
V
V
2
5
200  
CB =15 V  
CE =15 V  
CE = 5 V  
ICES  
20  
hFE  
DYMANIC ELECTRICAL SPECIFICATIONS (T  
= 25°C)  
CASE  
SD1146  
Symbol  
Test Conditions  
Units  
Min.  
10  
Typ.  
Max.  
45  
POUT  
ηC  
f = 470 MHz  
f = 470 MHz  
f = 470 MHz  
f = 1 MHz  
PIN = 2.5 W  
PIN = 2.5 W  
PIN = 2.5 W  
V
CE = 12.5 V  
V
CE = 12.5 V  
V
CE = 12.5 V  
W
%
dB  
pF  
60  
6
GP  
V
CB = 12.5 V  
COB  
IMPEDANCE DATA  
Freq.  
470 MHz  
ZIN ()  
1.6 + j 2.2  
ZCL ()  
6.0 - j 0.34  
=
POUT 10.0 W  
V
CC = 12.5 V  
Copyright 2000  
MSC1613.PDF 2000-11-26  
Microsemi  
Page 2  
RF Products Division  
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855  
SD1146  
RF & MICROWAVE TRANSISTORS  
R F P R O D U C T S D I V I S I O N  
PRODUCT PREVIEW  
Copyright 2000  
MSC1613.PDF 2000-11-26  
Microsemi  
Page 3  
RF Products Division  
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855  
SD1146  
RF & MICROWAVE TRANSISTORS  
R F P R O D U C T S D I V I S I O N  
PRODUCT PREVIEW  
Copyright 2000  
MSC1613.PDF 2000-11-26  
Microsemi  
Page 4  
RF Products Division  
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855  

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