SG2023DW [MICROSEMI]
Small Signal Bipolar Transistor;型号: | SG2023DW |
厂家: | Microsemi |
描述: | Small Signal Bipolar Transistor 驱动 光电二极管 驱动器 |
文件: | 总10页 (文件大小:435K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SG2000
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
Features
Description
The SG2000 series integrates seven NPN Darlington
pairs with internal suppression diodes to drive lamps,
relays, and solenoids in many military, aerospace, and
industrial applications that require severe environments.
All units feature open collector outputs with greater than
50V breakdown voltages combined with 500mA current
carrying capabilities.
.
Seven NPN Darlington Pairs
.
-55°C to 125°C Ambient Operating Temperature Range
Collector Currents to 600mA
Output Voltages from 50V to 95V
.
.
. Internal Clamping Diodes for Inductive Loads
DTL, TTL, PMOS, or CMOS Compatible Inputs
Hermetic Ceramic Package
.
.
Five different input configurations provide optimized
designs for interfacing with DTL, TTL, PMOS, or CMOS
drive signals. These devices are designed to operate
from -55°C to 125°C ambient temperature in a 16 pin
dual in line ceramic (J) package and 20 pin Leadless
Chip Carrier (LCC). The plastic SOIC (DW) is
designed to operate over the commercial temperature
range of 0°C to 70°C.
High Reliability Features
Following are the high reliability features of SG2000 series:
Available To MIL-STD-883 – 883, ¶ 1.2.1
Available to DSCC
.
.
Standard Microcircuit Drawing (SMD)
-
. MIL-M38510/14101BEA - SG2001J-JAN
MIL-M38510/14102BEA - SG2002J-JAN
MIL-M38510/14103BEA - SG2003J-JAN
MIL-M38510/14104BEA - SG2004J-JAN
.
.
.
-
MSC-AMS Level "S" Processing Available
Partial Schematics
k
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k
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Figure 1 · Partial Schematics
December 2014 Rev. 1.4
www.microsemi.com
1
© 2014 Microsemi Corporation
(Note 1)
Absolute Maximum Ratings
Peak Collector Current, IC
Output Voltage, VCE
(SG2000, 2020) ...................................................... 500mA
(SG2010) ................................................................ 600mA
Operating Junction Temperature
Hermetic (J, L Packages) ......................................... 150°C
Plastic (DW Package) ...............................................
(SG2000, 2010 series) ................................................ 50V
(SG2020 series) .......................................................... 95V
Input Voltage, V
(SG2002,3,4)IN............................................................... 30V
25°C
Storage Temperature Range .......................... -65°C to 150°C
Continuous Input Current, I ........................................ 25mA
IN
Lead Temperature (Soldering 10 sec.) ......................... 300°C
RoHS Peak Package Solder Reflow Temp. (40 sec. max. exp.)...... 260°C (+0, -5)
Note 1. Values beyond which damage may occur.
Thermal Data
J Package:
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers forθJCaremaximumsforthelimitingthermal
resistance of the package in a standard mounting configuration.
The θJA numbers are meant to be guidelines for the thermal
performance of the device/pc-board system. All of the above
assume no ambient airflow.
Thermal Resistance-Junction to Case, θJC ................... 30°C/W
Thermal Resistance-Junction to Ambient, θJA ............... 80°C/W
DW Package:
Thermal Resistance-Junction to Case, θJC .................... 35°C/W
Thermal Resistance-Junction to Ambient, θJA ................ 90°C/W
L Package:
Thermal Resistance-Junction to Case, θJC .................. 35°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 120°C/W
Recommended Operating Conditions (Note 2)
Peak Collector Current, IC
Output Voltage, VCE
SG2000, SG2020 series ........................................... 50mA
SG2010 series ........................................................ 500mA
Operating Ambient Temperature Range
SG2000, SG2010 series .............................................. 50V
SG2020 series ............................................................. 95V
SG2000 Series - Hermetic .......................... -55°C to 125°C
SG2000 Series - Plastic .................................. 0°C to 70°C
Note 2. Range over which the device is functional.
Selection Guide
Device
VCE Max
IC Max
Logic Inputs
Device
VCE Max
IC Max
Logic Inputs
SG2001
50V
500mA
General Purpose
PMOS, CMOS
SG2013
SG2014
SG2015
SG2021
50V
50V
50V
95V
600mA
600mA
600mA
500mA
5V TTL, CMOS
6V-15V CMOS, PMOS
High Output TTL
General Purpose
PMOS, CMOS
5V TTL, CMOS
6V-15V CMOS, PMOS
SG2002
SG2003
SG2004
SG2011
50V
50V
50V
50V
500mA
500mA
500mA
600mA
14V-25V PMOS
5V TTL, CMOS
6V-15V CMOS, PMOS
General Purpose
PMOS, CMOS
SG2023
SG2024
95V
95V
500mA
500mA
SG2012
50V
600mA
14V-25V PMOS
2
Electrical Characteristics
(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic -with -55°C≤ TA ≤ 125°C
andSG2000series-Plastic-with0°C≤ TA ≤ 70°C. Lowdutycyclepulsetestingtechniquesareusedwhichmaintainsjunctionandcasetemperaturesequal
totheambienttemperature.)
SG2001 thru SG2004
Limits
Min Typ Max
Applicable
Devices
Parameter
Test Conditions
VCE = 50V
Units
Temp.
Output Leakage Current (ICEX
)
All
100 µA
SG2002
SG2004
All
VCE = 50V, VIN = 6V
500 µA
500 µA
VCE = 50V, VIN = 1V
Collector - Emitter (VCE(SAT)
)
TA = TMIN IC = 350mA, IB = 850µA
TA = TMIN IC = 200mA, IB = 550µA
TA = TMIN IC = 100mA, IB = 350µA
TA = 25°C IC = 350mA, IB = 500µA
TA = 25°C IC = 200mA, IB = 350µA
TA = 25°C IC = 100mA, IB = 250µA
TA = TMAX IC = 350mA, IB = 500µA
TA = TMAX IC = 200mA, IB = 350µA
TA = TMAX IC = 100mA, IB = 250µA
VIN = 17V
1.6 1.8
V
V
V
V
V
V
V
V
V
1.3 1.5
1.1 1.3
1.25 1.6
1.1 1.3
0.9 1.1
1.6 1.8
1.3 1.5
1.1 1.3
Input Current (IIN(ON)
)
SG2002
SG2003
SG2004
480 850 1300 µA
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
VIN = 3.85V
VIN = 5V
VIN = 12V
Input Current (IIN(OFF)
Input Voltage (VIN(ON)
)
)
All
SG2002
TA = TMAX IC = 500µA
25
50
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
TA = TMIN VCE = 2V, IC = 300mA
TA = TMAX VCE = 2V, IC = 300mA
TA = TMIN VCE = 2V, IC = 200mA
TA = TMIN VCE = 2V, IC = 250mA
TA = TMIN VCE = 2V, IC = 300mA
TA = TMAX VCE = 2V, IC = 200mA
TA = TMAX VCE = 2V, IC = 250mA
TA = TMAX VCE = 2V, IC = 300mA
TA = TMIN VCE = 2V, IC = 125mA
TA = TMIN VCE = 2V, IC = 200mA
TA = TMIN VCE = 2V, IC = 275mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 125mA
TA = TMAX VCE = 2V, IC = 200mA
TA = TMAX VCE = 2V, IC = 275mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 350mA
TA = 25°C VCE = 2V, IC = 350mA
TA = 25°C
18
13
SG2003
3.3
3.6
3.9
2.4
2.7
3.0
6.0
8.0
10
SG2004
12
5.0
6.0
7.0
8.0
DC Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
SG2001
500
1000
mA
All
All
All
All
All
15
25
pF
TA = 25°C 0.5 E to 0.5 EOUT
250 1000 ns
250 1000 ns
IN
TA = 25°C 0.5 E to 0.5 EOUT
IN
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
VR = 50V
IF = 350mA
50
µA
V
1.7 2.0
Note 3. These parameters, although guaranteed, are not tested in production.
3
Electrical Characteristics (continued)
SG2011 thru SG2015
Limits
Applicable
Devices
Parameter
Test Conditions
VCE = 50V
Units
Temp.
Min Typ Max
Output Leakage Current (ICEX
)
All
100 µA
SG2012
SG2014
All
VCE = 50V, VIN = 6V
500 µA
500 µA
VCE = 50V, VIN = 1V
Collector - Emitter (VCE(SAT)
)
TA = TMIN IC = 500mA, IB = 1100µA
TA = TMIN IC = 350mA, IB = 850µA
TA = TMIN IC = 200mA, IB = 550µA
TA = 25°C IC = 500mA, IB = 600µA
TA = 25°C IC = 350mA, IB = 500µA
TA = 25°C IC = 200mA, IB = 350µA
TA = TMAX IC = 500mA, IB = 600µA
TA = TMAX IC = 350mA, IB = 500µA
TA = TMAX IC = 200mA, IB = 350µA
VIN = 17V
1.8 2.1
V
V
V
V
V
V
V
V
V
1.6 1.8
1.3 1.5
1.7 1.9
1.25 1.6
1.1 1.3
1.8 2.1
1.6 1.8
1.3 1.5
Input Current (IIN(ON)
)
SG2012
SG2013
SG2014
480 850 1300 µA
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
1180 1500 2400 µA
VIN = 3.85V
VIN = 5V
VIN = 12V
VIN = 3V
SG2015
All
Input Current (IIN(OFF)
)
TA = TMAX IC = 500µA
25
50
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Input Voltage (VIN(ON)
)
SG2012
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 250mA
TA = TMIN VCE = 2V, IC = 300mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 250mA
TA = TMAX VCE = 2V, IC = 300mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 275mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 275mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 500mA
TA = 25°C VCE = 2V, IC = 500mA
TA = 25°C
23.5
17
SG2013
3.6
3.9
6.0
2.7
3.0
3.5
10
SG2014
12
17
7.0
8.0
9.5
3.0
3.5
2.4
2.6
SG2015
SG2011
DC Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
450
900
mA
All
All
All
All
All
15
25
pF
TA = 25°C 0.5 E to 0.5 EOUT
250 1000 ns
250 1000 ns
IN
TA = 25°C 0.5 E to 0.5 EOUT
IN
VR = 50V
IF = 350mA
IF = 500mA
50
1.7 2.0
2.5
µA
V
V
Note 3. These parameters, although guaranteed, are not tested in production.
4
Electrical Characteristics (continued)
SG2021 thru SG2024
Limits
Applicable
Devices
Parameter
Test Conditions
VCE = 95V
Units
Temp.
Min Typ Max
Output Leakage Current (ICEX
)
All
SG2024
All
100 µA
500 µA
VCE = 95V, VIN = 1V
Collector - Emitter (VCE(SAT)
)
TA = TMIN IC = 350mA, IB = 850µA
TA = TMIN IC = 200mA, IB = 550µA
TA = TMIN IC = 100mA, IB = 350µA
TA = 25°C IC = 350mA, IB = 500µA
TA = 25°C IC = 200mA, IB = 350µA
TA = 25°C IC = 100mA, IB = 250µA
TA = TMAX IC = 350mA, IB = 500µA
TA = TMAX IC = 200mA, IB = 350µA
TA = TMAX IC = 100mA, IB = 250µA
VIN = 3.85V
1.6 1.8
V
V
V
V
V
V
V
V
V
1.3 1.5
1.1 1.3
1.25 1.6
1.1 1.3
0.9 1.1
1.6 1.8
1.3 1.5
1.1 1.3
Input Current (IIN(ON)
)
SG2023
SG2024
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
VIN = 5V
VIN = 12V
Input Current (IIN(OFF)
)
All
TA = TMAX IC = 500µA
25
50
µA
Input Voltage (VIN(ON)
)
TA = TMAX VCE = 2V, IC = 300mA
TA = TMIN VCE = 2V, IC = 200mA
TA = TMIN VCE = 2V, IC = 250mA
TA = TMIN VCE = 2V, IC = 300mA
TA = TMAX VCE = 2V, IC = 200mA
TA = TMAX VCE = 2V, IC = 250mA
TA = TMAX VCE = 2V, IC = 300mA
TA = TMIN VCE = 2V, IC = 125mA
TA = TMIN VCE = 2V, IC = 200mA
TA = TMIN VCE = 2V, IC = 275mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 125mA
TA = TMAX VCE = 2V, IC = 200mA
TA = TMAX VCE = 2V, IC = 275mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 350mA
TA = 25°C VCE = 2V, IC = 350mA
TA = 25°C
13
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
mA
SG2023
3.3
3.6
3.9
2.4
2.7
3.0
6.0
8.0
10
SG2024
SG2021
12
5.0
6.0
7.0
8.0
DC Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
500
1000
All
All
All
All
All
15
25
pF
TA = 25°C 0.5 E to 0.5 EOUT
250 1000 ns
250 1000 ns
50
1.7 2.0
IN
TA = 25°C 0.5 E to 0.5 EOUT
IN
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
VR = 95V
IF = 350mA
µA
V
Note 3. These parameters, although guaranteed, are not tested in production.
5
Characteristic Curves
FIGURE 2. OUTPUT CHARACTERISTICS
FIGURE 3. OUTPUT CURRENT VS. INPUT VOLTAGE
FIGURE 4. OUTPUT CURRENT VS. INPUT CURRENT
FIGURE 7. INPUT CHARACTERISTICS - SG2004
FIGURE 5. INPUT CHARACTERISTICS - SG2002
FIGURE 6. INPUT CHARACTERISTICS - SG2003
FIGURE 8. PEAK COLLECTOR CURRENT VS. DUTY CYCLE
6
Connection Diagrams and Ordering Information (See Notes Below)
Ambient
Temperature Range
Package
Part No. (Note 3)
Connection Diagram
16-PIN CERAMIC DIP
J - PACKAGE
1
SG2XXXJ-883B
SG2023J-DESC
SG2001J-JAN
SG2002J-JAN
SG2003J-JAN
SG2004J-JAN
SG2XXXJ
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
-55°C to 125°C
16
2
3
4
15
14
13
5
6
7
8
12
11
10
9
16-PIN PLASTIC SOIC
DW - PACKAGE
SG2003DW
SG2023DW
0°C to 70°C
0°C to 70°C
DW Package: RoHS Compliant / Pb-free Transition DC: 0516
DW Package: RoHS / Pb-free 100% Matte Tin Lead Finish
3
2
1
20 19
20-PINCERAMIC
LEADLESS CHIP CARRIER
L- PACKAGE
SG2XXXL-883B
SG2XXXL
-55°C to 125°C
-55°C to 125°C
18
4
5
6
7
17
16
15
8
14
9
10 11 12
13
Note 1. Contact factory for JAN and DESC product availability.
2. All parts are viewed from the top.
3. See selection guide for specific device types.
DW Package (Not Pictured) is 16-Pin Wide Body SOIC, same pinout as J package pictured above.
4.
Hermetic Packages J and L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versions.
5.
7
Package Outline Dimensions
Controlling dimensions are in inches, metric equivalents are shown for general information.
MILLIMETERS
INCHES
DIM
MIN
MAX
5.08
0.51
1.65
0.38
19.94
7.11
MIN
MAX
A
b
b2
c
D
E
0.200
0.020
0.065
0.015
0.785
0.280
D
0.38
1.04
0.20
19.30
5.59
0.015
0.045
0.008
0.760
0.220
9
8
16
E
1
0.100 BSC
e
2.54 BSC*
eA
b2
eA
H
L
7.37
0.63
3.18
-
7.87
1.78
5.08
15°
0.290
0.025
0.125
-
0.310
0.070
0.200
15°
A
α
Seating Plane
Q
0.51
1.02
0.020
0.040
L
*BSC: Basic Spacing Between Centers
Note:
α
H
b
e
Dimensions do not include protrusions; these shall
not exceed 0.155mm (.006”) on any side. Lead
dimension shall not include solder coverage.
Figure 9 · J 16-Pin CERDIP Package Dimensions
MILLIMETERS
INCHES
MIN
Dim
MIN
2.06
0.10
2.03
0.33
0.23
10.08
7.40
MAX
2.65
0.30
2.55
0.51
0.32
10.50
7.60
MAX
0.104
0.012
0.100
0.020
0.013
0.413
0.299
A
A1
A2
B
0.081
0.004
0.080
0.013
0.009
0.397
0.291
c
D
E
e
1.27 BSC
0.05 BSC
H
10.00
0.40
0°
10.65
1.27
8°
0.394
0.016
0°
0.419
0.050
8°
L
θ
*LC
-
0.10
-
0.004
*Lead co planarity
Note:
Dimensions do not include protrusions; these shall
not exceed 0.155mm (.006”) on any side. Lead
dimension shall not include solder coverage.
Dimensions are in mm, inches are for reference only.
Figure 10 · DW 16-Pin SOWB Package Dimensions
8
Package Outline Dimensions (continued)
E3
D
MILLIMETERS
INCHES
Dim
MIN
8.64
-
MAX
9.14
MIN
MAX
0.360
0.320
D/E
E3
e
0.340
-
8.128
E
1.270 BSC
0.635 TYP
0.050 BSC
0.025 TYP
B1
L
1.02
1.52
0.040
0.060
0.090
A
1.626
2.286
0.064
h
1.016 TYP
0.040 TYP
A
L2
L
8
A1
A1
A2
L2
B3
1.372
-
1.68
1.168
2.41
0.054
-
0.066
0.046
0.95
3
1
1.91
0.075
0.203R
0.008R
Note:
All exposed metalized area shall be gold plated
60 micro-inch minimum thickness over nickel
plated unless otherwise specified in purchase
order.
13
h
18
A2
B3
e
B1
Figure 11 · L 20-Pin Ceramic LCC Package Outline Dimensions
9
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SG2000.1/12.14
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