SG2023DW [MICROSEMI]

Small Signal Bipolar Transistor;
SG2023DW
型号: SG2023DW
厂家: Microsemi    Microsemi
描述:

Small Signal Bipolar Transistor

驱动 光电二极管 驱动器
文件: 总10页 (文件大小:435K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SG2000  
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS  
Features  
Description  
The SG2000 series integrates seven NPN Darlington  
pairs with internal suppression diodes to drive lamps,  
relays, and solenoids in many military, aerospace, and  
industrial applications that require severe environments.  
All units feature open collector outputs with greater than  
50V breakdown voltages combined with 500mA current  
carrying capabilities.  
.
Seven NPN Darlington Pairs  
.
-55°C to 125°C Ambient Operating Temperature Range  
Collector Currents to 600mA  
Output Voltages from 50V to 95V  
.
.
. Internal Clamping Diodes for Inductive Loads  
DTL, TTL, PMOS, or CMOS Compatible Inputs  
Hermetic Ceramic Package  
.
.
Five different input configurations provide optimized  
designs for interfacing with DTL, TTL, PMOS, or CMOS  
drive signals. These devices are designed to operate  
from -55°C to 125°C ambient temperature in a 16 pin  
dual in line ceramic (J) package and 20 pin Leadless  
Chip Carrier (LCC). The plastic SOIC (DW) is  
designed to operate over the commercial temperature  
range of 0°C to 70°C.  
High Reliability Features  
Following are the high reliability features of SG2000 series:  
Available To MIL-STD-883 – 883, ¶ 1.2.1  
Available to DSCC  
.
.
Standard Microcircuit Drawing (SMD)  
-
. MIL-M38510/14101BEA - SG2001J-JAN  
MIL-M38510/14102BEA - SG2002J-JAN  
MIL-M38510/14103BEA - SG2003J-JAN  
MIL-M38510/14104BEA - SG2004J-JAN  
.
.
.
-
MSC-AMS Level "S" Processing Available  
Partial Schematics  
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Figure 1 · Partial Schematics  
December 2014 Rev. 1.4  
www.microsemi.com  
1
© 2014 Microsemi Corporation  
(Note 1)  
Absolute Maximum Ratings  
Peak Collector Current, IC  
Output Voltage, VCE  
(SG2000, 2020) ...................................................... 500mA  
(SG2010) ................................................................ 600mA  
Operating Junction Temperature  
Hermetic (J, L Packages) ......................................... 150°C  
Plastic (DW Package) ...............................................  
(SG2000, 2010 series) ................................................ 50V  
(SG2020 series) .......................................................... 95V  
Input Voltage, V  
(SG2002,3,4)IN............................................................... 30V  
25°C  
Storage Temperature Range .......................... -65°C to 150°C  
Continuous Input Current, I ........................................ 25mA  
IN  
Lead Temperature (Soldering 10 sec.) ......................... 300°C  
RoHS Peak Package Solder Reflow Temp. (40 sec. max. exp.)...... 260°C (+0, -5)  
Note 1. Values beyond which damage may occur.  
Thermal Data  
J Package:  
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).  
Note B. The above numbers forθJCaremaximumsforthelimitingthermal  
resistance of the package in a standard mounting configuration.  
The θJA numbers are meant to be guidelines for the thermal  
performance of the device/pc-board system. All of the above  
assume no ambient airflow.  
Thermal Resistance-Junction to Case, θJC ................... 30°C/W  
Thermal Resistance-Junction to Ambient, θJA ............... 80°C/W  
DW Package:  
Thermal Resistance-Junction to Case, θJC .................... 35°C/W  
Thermal Resistance-Junction to Ambient, θJA ................ 90°C/W  
L Package:  
Thermal Resistance-Junction to Case, θJC .................. 35°C/W  
Thermal Resistance-Junction to Ambient, θJA ............ 120°C/W  
Recommended Operating Conditions (Note 2)  
Peak Collector Current, IC  
Output Voltage, VCE  
SG2000, SG2020 series ........................................... 50mA  
SG2010 series ........................................................ 500mA  
Operating Ambient Temperature Range  
SG2000, SG2010 series .............................................. 50V  
SG2020 series ............................................................. 95V  
SG2000 Series - Hermetic .......................... -55°C to 125°C  
SG2000 Series - Plastic .................................. 0°C to 70°C  
Note 2. Range over which the device is functional.  
Selection Guide  
Device  
VCE Max  
IC Max  
Logic Inputs  
Device  
VCE Max  
IC Max  
Logic Inputs  
SG2001  
50V  
500mA  
General Purpose  
PMOS, CMOS  
SG2013  
SG2014  
SG2015  
SG2021  
50V  
50V  
50V  
95V  
600mA  
600mA  
600mA  
500mA  
5V TTL, CMOS  
6V-15V CMOS, PMOS  
High Output TTL  
General Purpose  
PMOS, CMOS  
5V TTL, CMOS  
6V-15V CMOS, PMOS  
SG2002  
SG2003  
SG2004  
SG2011  
50V  
50V  
50V  
50V  
500mA  
500mA  
500mA  
600mA  
14V-25V PMOS  
5V TTL, CMOS  
6V-15V CMOS, PMOS  
General Purpose  
PMOS, CMOS  
SG2023  
SG2024  
95V  
95V  
500mA  
500mA  
SG2012  
50V  
600mA  
14V-25V PMOS  
2
Electrical Characteristics  
(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic -with -55°CTA 125°C  
andSG2000series-Plastic-with0°CTA 70°C. Lowdutycyclepulsetestingtechniquesareusedwhichmaintainsjunctionandcasetemperaturesequal  
totheambienttemperature.)  
SG2001 thru SG2004  
Limits  
Min Typ Max  
Applicable  
Devices  
Parameter  
Test Conditions  
VCE = 50V  
Units  
Temp.  
Output Leakage Current (ICEX  
)
All  
100 µA  
SG2002  
SG2004  
All  
VCE = 50V, VIN = 6V  
500 µA  
500 µA  
VCE = 50V, VIN = 1V  
Collector - Emitter (VCE(SAT)  
)
TA = TMIN IC = 350mA, IB = 850µA  
TA = TMIN IC = 200mA, IB = 550µA  
TA = TMIN IC = 100mA, IB = 350µA  
TA = 25°C IC = 350mA, IB = 500µA  
TA = 25°C IC = 200mA, IB = 350µA  
TA = 25°C IC = 100mA, IB = 250µA  
TA = TMAX IC = 350mA, IB = 500µA  
TA = TMAX IC = 200mA, IB = 350µA  
TA = TMAX IC = 100mA, IB = 250µA  
VIN = 17V  
1.6 1.8  
V
V
V
V
V
V
V
V
V
1.3 1.5  
1.1 1.3  
1.25 1.6  
1.1 1.3  
0.9 1.1  
1.6 1.8  
1.3 1.5  
1.1 1.3  
Input Current (IIN(ON)  
)
SG2002  
SG2003  
SG2004  
480 850 1300 µA  
650 930 1350 µA  
240 350 500 µA  
650 1000 1450 µA  
VIN = 3.85V  
VIN = 5V  
VIN = 12V  
Input Current (IIN(OFF)  
Input Voltage (VIN(ON)  
)
)
All  
SG2002  
TA = TMAX IC = 500µA  
25  
50  
µA  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
TA = TMIN VCE = 2V, IC = 300mA  
TA = TMAX VCE = 2V, IC = 300mA  
TA = TMIN VCE = 2V, IC = 200mA  
TA = TMIN VCE = 2V, IC = 250mA  
TA = TMIN VCE = 2V, IC = 300mA  
TA = TMAX VCE = 2V, IC = 200mA  
TA = TMAX VCE = 2V, IC = 250mA  
TA = TMAX VCE = 2V, IC = 300mA  
TA = TMIN VCE = 2V, IC = 125mA  
TA = TMIN VCE = 2V, IC = 200mA  
TA = TMIN VCE = 2V, IC = 275mA  
TA = TMIN VCE = 2V, IC = 350mA  
TA = TMAX VCE = 2V, IC = 125mA  
TA = TMAX VCE = 2V, IC = 200mA  
TA = TMAX VCE = 2V, IC = 275mA  
TA = TMAX VCE = 2V, IC = 350mA  
TA = TMIN VCE = 2V, IC = 350mA  
TA = 25°C VCE = 2V, IC = 350mA  
TA = 25°C  
18  
13  
SG2003  
3.3  
3.6  
3.9  
2.4  
2.7  
3.0  
6.0  
8.0  
10  
SG2004  
12  
5.0  
6.0  
7.0  
8.0  
DC Forward Current  
Transfer Ratio (hFE)  
Input Capacitance (CIN) (Note 3)  
Turn-On Delay (TPLH)  
Turn-Off Delay (TPHL)  
SG2001  
500  
1000  
mA  
All  
All  
All  
All  
All  
15  
25  
pF  
TA = 25°C 0.5 E to 0.5 EOUT  
250 1000 ns  
250 1000 ns  
IN  
TA = 25°C 0.5 E to 0.5 EOUT  
IN  
Clamp Diode Leakage Current (IR)  
Clamp Diode Forward Voltage (VF)  
VR = 50V  
IF = 350mA  
50  
µA  
V
1.7 2.0  
Note 3. These parameters, although guaranteed, are not tested in production.  
3
Electrical Characteristics (continued)  
SG2011 thru SG2015  
Limits  
Applicable  
Devices  
Parameter  
Test Conditions  
VCE = 50V  
Units  
Temp.  
Min Typ Max  
Output Leakage Current (ICEX  
)
All  
100 µA  
SG2012  
SG2014  
All  
VCE = 50V, VIN = 6V  
500 µA  
500 µA  
VCE = 50V, VIN = 1V  
Collector - Emitter (VCE(SAT)  
)
TA = TMIN IC = 500mA, IB = 1100µA  
TA = TMIN IC = 350mA, IB = 850µA  
TA = TMIN IC = 200mA, IB = 550µA  
TA = 25°C IC = 500mA, IB = 600µA  
TA = 25°C IC = 350mA, IB = 500µA  
TA = 25°C IC = 200mA, IB = 350µA  
TA = TMAX IC = 500mA, IB = 600µA  
TA = TMAX IC = 350mA, IB = 500µA  
TA = TMAX IC = 200mA, IB = 350µA  
VIN = 17V  
1.8 2.1  
V
V
V
V
V
V
V
V
V
1.6 1.8  
1.3 1.5  
1.7 1.9  
1.25 1.6  
1.1 1.3  
1.8 2.1  
1.6 1.8  
1.3 1.5  
Input Current (IIN(ON)  
)
SG2012  
SG2013  
SG2014  
480 850 1300 µA  
650 930 1350 µA  
240 350 500 µA  
650 1000 1450 µA  
1180 1500 2400 µA  
VIN = 3.85V  
VIN = 5V  
VIN = 12V  
VIN = 3V  
SG2015  
All  
Input Current (IIN(OFF)  
)
TA = TMAX IC = 500µA  
25  
50  
µA  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Input Voltage (VIN(ON)  
)
SG2012  
TA = TMIN VCE = 2V, IC = 500mA  
TA = TMAX VCE = 2V, IC = 500mA  
TA = TMIN VCE = 2V, IC = 250mA  
TA = TMIN VCE = 2V, IC = 300mA  
TA = TMIN VCE = 2V, IC = 500mA  
TA = TMAX VCE = 2V, IC = 250mA  
TA = TMAX VCE = 2V, IC = 300mA  
TA = TMAX VCE = 2V, IC = 500mA  
TA = TMIN VCE = 2V, IC = 275mA  
TA = TMIN VCE = 2V, IC = 350mA  
TA = TMIN VCE = 2V, IC = 500mA  
TA = TMAX VCE = 2V, IC = 275mA  
TA = TMAX VCE = 2V, IC = 350mA  
TA = TMAX VCE = 2V, IC = 500mA  
TA = TMIN VCE = 2V, IC = 350mA  
TA = TMIN VCE = 2V, IC = 500mA  
TA = TMAX VCE = 2V, IC = 350mA  
TA = TMAX VCE = 2V, IC = 500mA  
TA = TMIN VCE = 2V, IC = 500mA  
TA = 25°C VCE = 2V, IC = 500mA  
TA = 25°C  
23.5  
17  
SG2013  
3.6  
3.9  
6.0  
2.7  
3.0  
3.5  
10  
SG2014  
12  
17  
7.0  
8.0  
9.5  
3.0  
3.5  
2.4  
2.6  
SG2015  
SG2011  
DC Forward Current  
Transfer Ratio (hFE)  
Input Capacitance (CIN) (Note 3)  
Turn-On Delay (TPLH)  
Turn-Off Delay (TPHL)  
Clamp Diode Leakage Current (IR)  
Clamp Diode Forward Voltage (VF)  
450  
900  
mA  
All  
All  
All  
All  
All  
15  
25  
pF  
TA = 25°C 0.5 E to 0.5 EOUT  
250 1000 ns  
250 1000 ns  
IN  
TA = 25°C 0.5 E to 0.5 EOUT  
IN  
VR = 50V  
IF = 350mA  
IF = 500mA  
50  
1.7 2.0  
2.5  
µA  
V
V
Note 3. These parameters, although guaranteed, are not tested in production.  
4
Electrical Characteristics (continued)  
SG2021 thru SG2024  
Limits  
Applicable  
Devices  
Parameter  
Test Conditions  
VCE = 95V  
Units  
Temp.  
Min Typ Max  
Output Leakage Current (ICEX  
)
All  
SG2024  
All  
100 µA  
500 µA  
VCE = 95V, VIN = 1V  
Collector - Emitter (VCE(SAT)  
)
TA = TMIN IC = 350mA, IB = 850µA  
TA = TMIN IC = 200mA, IB = 550µA  
TA = TMIN IC = 100mA, IB = 350µA  
TA = 25°C IC = 350mA, IB = 500µA  
TA = 25°C IC = 200mA, IB = 350µA  
TA = 25°C IC = 100mA, IB = 250µA  
TA = TMAX IC = 350mA, IB = 500µA  
TA = TMAX IC = 200mA, IB = 350µA  
TA = TMAX IC = 100mA, IB = 250µA  
VIN = 3.85V  
1.6 1.8  
V
V
V
V
V
V
V
V
V
1.3 1.5  
1.1 1.3  
1.25 1.6  
1.1 1.3  
0.9 1.1  
1.6 1.8  
1.3 1.5  
1.1 1.3  
Input Current (IIN(ON)  
)
SG2023  
SG2024  
650 930 1350 µA  
240 350 500 µA  
650 1000 1450 µA  
VIN = 5V  
VIN = 12V  
Input Current (IIN(OFF)  
)
All  
TA = TMAX IC = 500µA  
25  
50  
µA  
Input Voltage (VIN(ON)  
)
TA = TMAX VCE = 2V, IC = 300mA  
TA = TMIN VCE = 2V, IC = 200mA  
TA = TMIN VCE = 2V, IC = 250mA  
TA = TMIN VCE = 2V, IC = 300mA  
TA = TMAX VCE = 2V, IC = 200mA  
TA = TMAX VCE = 2V, IC = 250mA  
TA = TMAX VCE = 2V, IC = 300mA  
TA = TMIN VCE = 2V, IC = 125mA  
TA = TMIN VCE = 2V, IC = 200mA  
TA = TMIN VCE = 2V, IC = 275mA  
TA = TMIN VCE = 2V, IC = 350mA  
TA = TMAX VCE = 2V, IC = 125mA  
TA = TMAX VCE = 2V, IC = 200mA  
TA = TMAX VCE = 2V, IC = 275mA  
TA = TMAX VCE = 2V, IC = 350mA  
TA = TMIN VCE = 2V, IC = 350mA  
TA = 25°C VCE = 2V, IC = 350mA  
TA = 25°C  
13  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
mA  
SG2023  
3.3  
3.6  
3.9  
2.4  
2.7  
3.0  
6.0  
8.0  
10  
SG2024  
SG2021  
12  
5.0  
6.0  
7.0  
8.0  
DC Forward Current  
Transfer Ratio (hFE)  
Input Capacitance (CIN) (Note 3)  
Turn-On Delay (TPLH)  
Turn-Off Delay (TPHL)  
500  
1000  
All  
All  
All  
All  
All  
15  
25  
pF  
TA = 25°C 0.5 E to 0.5 EOUT  
250 1000 ns  
250 1000 ns  
50  
1.7 2.0  
IN  
TA = 25°C 0.5 E to 0.5 EOUT  
IN  
Clamp Diode Leakage Current (IR)  
Clamp Diode Forward Voltage (VF)  
VR = 95V  
IF = 350mA  
µA  
V
Note 3. These parameters, although guaranteed, are not tested in production.  
5
Characteristic Curves  
FIGURE 2. OUTPUT CHARACTERISTICS  
FIGURE 3. OUTPUT CURRENT VS. INPUT VOLTAGE  
FIGURE 4. OUTPUT CURRENT VS. INPUT CURRENT  
FIGURE 7. INPUT CHARACTERISTICS - SG2004  
FIGURE 5. INPUT CHARACTERISTICS - SG2002  
FIGURE 6. INPUT CHARACTERISTICS - SG2003  
FIGURE 8. PEAK COLLECTOR CURRENT VS. DUTY CYCLE  
6
Connection Diagrams and Ordering Information (See Notes Below)  
Ambient  
Temperature Range  
Package  
Part No. (Note 3)  
Connection Diagram  
16-PIN CERAMIC DIP  
J - PACKAGE  
1
SG2XXXJ-883B  
SG2023J-DESC  
SG2001J-JAN  
SG2002J-JAN  
SG2003J-JAN  
SG2004J-JAN  
SG2XXXJ  
-55°C to 125°C  
-55°C to 125°C  
-55°C to 125°C  
-55°C to 125°C  
-55°C to 125°C  
-55°C to 125°C  
-55°C to 125°C  
16  
2
3
4
15  
14  
13  
5
6
7
8
12  
11  
10  
9
16-PIN PLASTIC SOIC  
DW - PACKAGE  
SG2003DW  
SG2023DW  
0°C to 70°C  
0°C to 70°C  
DW Package: RoHS Compliant / Pb-free Transition DC: 0516  
DW Package: RoHS / Pb-free 100% Matte Tin Lead Finish  
3
2
1
20 19  
20-PINCERAMIC  
LEADLESS CHIP CARRIER  
L- PACKAGE  
SG2XXXL-883B  
SG2XXXL  
-55°C to 125°C  
-55°C to 125°C  
18  
4
5
6
7
17  
16  
15  
8
14  
9
10 11 12  
13  
Note 1. Contact factory for JAN and DESC product availability.  
2. All parts are viewed from the top.  
3. See selection guide for specific device types.  
DW Package (Not Pictured) is 16-Pin Wide Body SOIC, same pinout as J package pictured above.  
4.  
Hermetic Packages J and L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versions.  
5.  
7
Package Outline Dimensions  
Controlling dimensions are in inches, metric equivalents are shown for general information.  
MILLIMETERS  
INCHES  
DIM  
MIN  
MAX  
5.08  
0.51  
1.65  
0.38  
19.94  
7.11  
MIN  
MAX  
A
b
b2  
c
D
E
0.200  
0.020  
0.065  
0.015  
0.785  
0.280  
D
0.38  
1.04  
0.20  
19.30  
5.59  
0.015  
0.045  
0.008  
0.760  
0.220  
9
8
16  
E
1
0.100 BSC  
e
2.54 BSC*  
eA  
b2  
eA  
H
L
7.37  
0.63  
3.18  
-
7.87  
1.78  
5.08  
15°  
0.290  
0.025  
0.125  
-
0.310  
0.070  
0.200  
15°  
A
α
Seating Plane  
Q
0.51  
1.02  
0.020  
0.040  
L
*BSC: Basic Spacing Between Centers  
Note:  
α
H
b
e
Dimensions do not include protrusions; these shall  
not exceed 0.155mm (.006”) on any side. Lead  
dimension shall not include solder coverage.  
Figure 9 · J 16-Pin CERDIP Package Dimensions  
MILLIMETERS  
INCHES  
MIN  
Dim  
MIN  
2.06  
0.10  
2.03  
0.33  
0.23  
10.08  
7.40  
MAX  
2.65  
0.30  
2.55  
0.51  
0.32  
10.50  
7.60  
MAX  
0.104  
0.012  
0.100  
0.020  
0.013  
0.413  
0.299  
A
A1  
A2  
B
0.081  
0.004  
0.080  
0.013  
0.009  
0.397  
0.291  
c
D
E
e
1.27 BSC  
0.05 BSC  
H
10.00  
0.40  
0°  
10.65  
1.27  
8°  
0.394  
0.016  
0°  
0.419  
0.050  
8°  
L
θ
*LC  
-
0.10  
-
0.004  
*Lead co planarity  
Note:  
Dimensions do not include protrusions; these shall  
not exceed 0.155mm (.006”) on any side. Lead  
dimension shall not include solder coverage.  
Dimensions are in mm, inches are for reference only.  
Figure 10 · DW 16-Pin SOWB Package Dimensions  
8
Package Outline Dimensions (continued)  
E3  
D
MILLIMETERS  
INCHES  
Dim  
MIN  
8.64  
-
MAX  
9.14  
MIN  
MAX  
0.360  
0.320  
D/E  
E3  
e
0.340  
-
8.128  
E
1.270 BSC  
0.635 TYP  
0.050 BSC  
0.025 TYP  
B1  
L
1.02  
1.52  
0.040  
0.060  
0.090  
A
1.626  
2.286  
0.064  
h
1.016 TYP  
0.040 TYP  
A
L2  
L
8
A1  
A1  
A2  
L2  
B3  
1.372  
-
1.68  
1.168  
2.41  
0.054  
-
0.066  
0.046  
0.95  
3
1
1.91  
0.075  
0.203R  
0.008R  
Note:  
All exposed metalized area shall be gold plated  
60 micro-inch minimum thickness over nickel  
plated unless otherwise specified in purchase  
order.  
13  
h
18  
A2  
B3  
e
B1  
Figure 11 · L 20-Pin Ceramic LCC Package Outline Dimensions  
9
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SG2000.1/12.14  

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