SK82 [MICROSEMI]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, MODIFIED SMCJ, 2 PIN;
SK82
型号: SK82
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, MODIFIED SMCJ, 2 PIN

IOT 光电二极管
文件: 总3页 (文件大小:53K)
中文:  中文翻译
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SK82  
THRU  
SK810  
21201 Itasca St.  
Chatsworth, CA 91311  
Phone: (818) 701-4933  
Fax: (818) 701-4939  
Features  
8 Amp Schottky  
Rectifier  
20 to 100 Volts  
For Surface Mount Applications  
Extremely Low Thermal Resistance  
Easy Pick And Place  
High Temp Soldering: 250°C for 10 Seconds At Terminals\  
High Current Capability With Low Forward Voltage  
PowerPACK  
(Modified SMCJ Type)  
Maximum Ratings  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Maximum Thermal Resistance; 8°C/W Junction To Lead  
H
Cathode Band  
Microsemi  
Part  
Number  
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum Maximum  
J
Device  
RMS  
Voltage  
DC  
Blocking  
Voltage  
20V  
30V  
40V  
45V  
50V  
60V  
80V  
SK82  
SK83  
SK84  
SK845  
SK85  
SK86  
SK88  
SK810  
SK82  
SK83  
SK84  
SK845  
SK85  
SK86  
SK88  
SK810  
20V  
30V  
40V  
45V  
50V  
60V  
80V  
100V  
14V  
21V  
28V  
31.5V  
35V  
42V  
56V  
70V  
A
C
E
D
B
F
G
DIMENSIONS  
100V  
INCHES  
MIN  
.210  
.199  
.004  
---  
.063  
.175  
.318  
.239  
.234  
MM  
MIN  
5.33  
5.05  
.10  
DIM  
A
B
C
D
E
F
G
H
J
MAX  
.214  
.203  
.008  
.02  
.067  
.179  
.322  
.243  
.256  
MAX  
5.43  
5.15  
.20  
NOTE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
Peak Forward Surge  
Current  
---  
.51  
IF(AV)  
8.0A  
TJ = 120°C  
1.60  
4.45  
8.08  
6.08  
5.95  
1.70  
4.55  
8.18  
6.18  
6.05  
IFSM  
200A  
8.3ms, half sine  
Maximum  
SUGGESTED SOLDER  
PAD LAYOUT  
Instantaneous  
Forward Voltage  
SK82-845  
0.185”  
VF  
IR  
.50V  
.75V  
IFM = 8.0A;  
TJ = 25°C*  
SK85-810  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
0.215”  
.5mA  
20mA  
TJ = 25°C  
TJ = 100°C  
Typical Junction  
Capacitance  
CJ  
660pF Measured at  
1.0MHz, VR=4.0V  
0.075”  
*Pulse test: Pulse width 200 µsec, Duty cycle 2%  
SK82 thru SK810  
Figure 1  
Typical Forward Characteristics  
100  
600  
400  
Figure 2  
Forward Derating Curve  
12  
10  
20  
0
100  
8.0  
6.0  
4.0  
2.0  
60  
40  
20  
Amps  
SK82-SK845  
SK85-SK810  
10  
6
Amps  
Single Phase, Half Wave  
60Hz Resistive or Inductive Load  
4
0
80  
100  
120  
140  
160  
180  
60  
2
°C  
25°C  
Average Forward Rectified Current - Amperes versus  
Ambient Temperature - °C  
1
.6  
.4  
.2  
.1  
.2  
.4  
.6  
.8  
1.4  
1.0  
1.2  
Volts  
Instantaneous Forward Current - Amperes versus  
Instantaneous Forward Voltage - Volts  
Figure 3  
Junction Capacitance  
100  
600  
400  
200  
TJ=25°C  
pF  
100  
60  
40  
20  
10  
.1  
.2  
.4  
1
2
10 20  
200 400  
1000  
4
40  
100  
Volts  
Junction Capacitance - pF versus  
Reverse Voltage - Volts  
SK82 thru SK810  
Figure 4  
Typical Reverse Characteristics  
10  
6
Figure 5  
Peak Forward Surge Current  
4
300  
250  
2
1
200  
150  
100  
.6  
.4  
.2  
Amps  
25°C  
50  
0
.1  
µAmps  
80  
100  
1
6
60  
4
8 10 20  
Cycles  
40  
2
.06  
.04  
Peak Forward Surge Current - Amperes versus  
Number Of Cycles At 60Hz - Cycles  
.02  
.01  
.006  
.004  
SK82-SK845  
SK85-  
.002  
.001  
20  
40  
60  
80  
140  
100  
12  
0
Volts  
Instantaneous Reverse Leakage Current - MicroAmperes versus  
Percent Of Rated Peak Reverse Voltage - Volts  

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