SMBJ2K3.0TRE3 [MICROSEMI]
Trans Voltage Suppressor Diode, 3V V(RWM), Unidirectional,;
| 型号： | SMBJ2K3.0TRE3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 3V V(RWM), Unidirectional, 二极管 |
| 文件： | 总3页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBJ2K3.0 thru SMBJ2K5.0, e3
SMBG2K3.0 thru SMBG2K5.0, e3
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The SMBJ2K3.0-5.0 or SMBG2K3.0-5.0 series of surface mount 2000 Watt
unidirectional Transient Voltage Suppressors (TVSs) provide low voltage
transient protection in a Working Standoff Voltage (VWM) selections from 3.0
to 5.0 volts. Response time of clamping action is virtually instantaneous and
may also be used for protection from ESD or EFT per IEC61000-4-2 and
IEC61000-4-4, or for inductive switching environments and induced RF.
They can also be used for protecting other sensitive components from
secondary lightning effects per IEC61000-4-5 and class levels defined
herein. Microsemi also offers numerous other TVS products to meet higher
and lower power demands and special applications. Also available in military
equivalent screening levels by adding a prefix identifier as further described
in the Features section. Microsemi also offers numerous other TVS products
to meet higher and lower power applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Suppresses transients up to 2000 watts @ 8/20 µs (see
Figure 1 and 2)
•
•
Selections for 3.0 to 5.0 V Working Peak Standoff
(VWM) voltage
•
•
Fast response
Economical unidirectional TVS series in surface
mount with flat handling surface for accurate
placement
Optional 100% screening for avionics grade is available
by adding MA prefix to part number for added 100%
temperature cycle -55oC to +125oC (10X) as well as surge
(3X) and 24 hours HTRB with post test VZ & IR (in the
operating direction for unidirectional or both directions for
bidirectional)
•
Voltage and reverse (leakage) current lowest
available
•
Protects sensitive components such as IC’s,
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
•
•
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding
MQ, MX, or MV prefixes respectively to part numbers.
•
•
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
•
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance for Class 1
•
•
RoHS Compliant devices available by adding “e3” suffix
Consult factory for bidirectional options
MAXIMUM RATINGS
• Peak Pulse Power dissipation at 25oC: 2000 watts at 8/20
μs or 300 Watts at 10/1000 μs (also see Figure 1 and 4)
MECHANICAL AND PACKAGING
•
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
• Clamping Voltage at 10 Amps @ 8/20 μs shown on page 2
• Impulse repetition rate (duty factor): 0.01% maximum
• tclamping (0 volts to V(BR) min.): < 100 ps
•
•
FINISH: Tin-Lead or RoHS compliant annealed
matte-Tin plating over copper readily solderable
per MIL-STD-750, method 2026
MARKING: Body marked without SMBJ or SMBG
part number prefix, e.g. 2K3.0, 2K3.3, 2K4.0, etc.
• Operating and Storage temperature: -65oC to +150oC
• Thermal resistance: 25 ºC/W junction to lead, or 90ºC/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
•
•
POLARITY: Band denotes cathode
WEIGHT: 0.1 grams (approximate)
• Steady-State Power dissipation: 5 watts at TL = 25oC, or
1.38 watts at TA = 25ºC when mounted on FR4 PC board
with recommended footprint
•
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
• Forward Voltage at 25oC: 3.5 Volts maximum @ 30 Amp
•
See package dimensions on last page
peak impulse of 8.3 ms half-sine wave (unidirectional only)
• Solder temperatures: 260oC for 10 s (maximum)
Copyright © 2007
6-21-2007 REV G
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SMBJ2K3.0 thru SMBJ2K5.0, e3
SMBG2K3.0 thru SMBG2K5.0, e3
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS
BREAKDOWN VOLTAGE
BREAKDOWN
RATED
STANDOFF
VOLTAGE
MAX
STANDBY
CURRENT
MAX
CLAMPING
VOLTAGE
PEAK PULSE
CURRENT
TEMPERATURE
COEFFICIANT
of V(BR)
MICROSEMI
PART
Minimum
CURRENT
NUMBER
(add SMBJ or
SMBG prefix)
V(BR)
V
I(BR)
mA
50
50
50
50
50
VWM
V
3.0
3.3
4.0
4.5
5.0
I
D @ VWM
V
C @ IPP
V
5.4
5.8
6.3
6.6
7.6
IPP
A
10
10
10
10
10
αV(BR)
% / oC
+0/-0.05
±0.025
±0.030
±0.040
+0.050
μA
1500
700
400
50
2K3.0
2K3.3
2K4.0
2K4.5
2K5.0
4.3
4.6
5.0
5.4
5.9
5
SYMBOLS & DEFINITIONS
Symbol
VWM
PPP
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Symbol
Definition
Peak Pulse Current
IPP
VC
Clamping Voltage
V(BR)
ID
Breakdown Voltage
Standby Current
I(BR)
Breakdown Current for V(BR)
GRAPHS
tw – Pulse Width - μs
Test waveform parmeters: tr=8 μs, tp=20 μs
FIGURE 2
FIGURE 1
Peak Pulse Power vs. Pulse Time
Pulse Waveform for
8/20 µs Exponential Surge
Copyright © 2007
6-21-2007 REV G
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SMBJ2K3.0 thru SMBJ2K5.0, e3
SMBG2K3.0 thru SMBG2K5.0, e3
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
Test waveform parmeters: tr=10 μs, tp=1000 μs
FIGURE 3
TL Lead Temperature oC
FIGURE 4 - Derating Curve
Pulse Waveform for
10/1000 µs Exponential Surge
PACKAGE DIMENSIONS
SMBJ
SMBG
A
B
C
D
E
F
K
L
MIN
MAX
.077 .160
.083 .180
.130 .205
.155 .220
.077
.104
.235
.255
.015
.030
.030
.060
DIMENSIONS IN MILLIMETERS
MIN
MAX
1.96 4.06
2.10 4.57
3.30 5.21
3.94 5.59
1.95
2.65
5.97
6.48
.381
.762
.760
1.520
SMBJ
INCHES
.260
.085
.110
mm
6.60
2.16
2.79
A
B
C
SMBG
INCHES
0.320
0.085
0.110
mm
8.13
2.16
2.79
A
B
C
Copyright © 2007
6-21-2007 REV G
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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