SMDB05CE3/TR13 [MICROSEMI]

Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, ROHS COMPLIANT, PLASTIC, SOP-8;


型号：	SMDB05CE3/TR13
厂家：	Microsemi
描述：	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, ROHS COMPLIANT, PLASTIC, SOP-8
文件：	总2页 (文件大小：125K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMDA03 thru SMDA24C, e3

and SMDB03 thru SMDB24C, e3

4 LINE TVSarray ™

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8

configuration giving protection to 4 unidirectional or bi-directional data or interface

lines. It is designed for use in applications where protection is required at the board

level from voltage transients caused by electrostatic discharge (ESD) as defined in

IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of

secondary lightning. These TVS arrays have peak pulse power ratings of 300 watts

(SMDA) and 500 watts (SMDB) for an 8/20 µsec pulse. They are suitable for

protection of sensitive circuitry consisting of TTL, CMOS, DRAM’s, SRAM’s,

HCMOS, HSIC and low-voltage interfaces from 3.3 volts to 24 volts

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

PACKAGING

•

Protects 3.0/3.3 volt up to 24 volt components

Protects 4 unidirectional or bidirectional lines

Provides electrically-isolated protection

•

Tape & Reel per EIA Standard 481

13 inch reel; 2,500 pieces (STANDARD)

Carrier tubes; 95 pcs (OPTIONAL)

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

SMDA Peak Pulse Power: 300 watts (Fig. 1 and 2)

SMDB Peak Pulse Power: 500 watts (Fig. 1 and 2)

Pulse Repetition Rate: <.01%

•

CASE: Void-free transfer molded thermosetting epoxy

compound meeting UL 94V-0 flammability classification

TERMINALS: Tin-Lead or RoHS Compliant annealed

matte-Tin plating solderable per MIL-STD-750 method

2026

WEIGHT: 0.066 grams (approximate)

MARKING: MSC Logo, device marking code*, date code

Pin #1 defined by dot on top of package

•

ELECTRICAL CHARACTERISTICS PER LINE @ 25^oC Unless otherwise specified

BREAKDOWN

VOLTAGE

CLAMPING

VOLTAGE

CLAMPING

VOLTAGE

STANDBY

(LEAKAGE)

CURRENT

TEMPERATURE

COEFFICIENT

STAND OFF

VOLTAGE

CAPACITANCE

f =1 MHz

V_BR

V_C

of V_BR

V_WM

DEVICE

MARKING

CODE *

I_D

α_VBR

PART

NUMBER

@0V

_BR= 1 mA

VOLTS

MIN

I_PP= 1 A

I_PP= 5 A

@V_WM

(Figure 2)

VOLTS

(Figure 2)

VOLTS

MAX

µA

mV/°C

TYP

MAX

TYP

SMDA03

SMDA03C

SMDB03

SMDB03C

SMDA05

SMDA05C

SMDB05

SMDB05C

SMDA12

SMDA12C

SMDB12

SMDB12C

SMDA15

SMDA15C

SMDB15

SMDB15C

SMDA24

SMDA24C

SMDB24

SMDB24C

SDK

SDL

PDK

PDL

SDA

SDB

PDA

PDB

SDC

SDD

PDC

PDD

SDE

SDF

PDE

PDF

SDG

SDH

PDG

PDH

3.3

5.0

12.0

15.0

24.0

13.3

16.7

26.7

200

400

200

400

600

300

600

300

400

200

400

200

185

140

-3

-5

-3

-5

9.8

140

Note: Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage V_WM. Product selected voltage should be equal to or

greater than the continuous peak operating voltage of the circuit to be protected. Part numbers with a C suffix are bi-directional devices.

* Device marking has an e3 suffix added for the RoHS Compliant options, e.g. SDKe3, SDLe3, SDCe3, SDEe3, PDHe3, etc.

Microsemi

Page 1

11-11-2005 REV R

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

SMDA03 thru SMDA24C, e3

and SMDB03 thru SMDB24C, e3

4 LINE TVSarray ™

S C O T T S D A L E D I V I S I O N

SYMBOLS & DEFINITIONS

Symbol

V_WM

Definition

Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.

V_WMmust be selected to be equal or be greater than the operating voltage of the line to be protected.

Minimum Breakdown Voltage: Minimum voltage the device will exhibit at a specified current

Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a

pulse time of 20 µs.

V_BR

V_C

I_D

Standby Current: Leakage current at V_WM.

Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.

GRAPHS

10.0

1.0

0.1

0.01

Figure 1

Figure 2

Peak Pulse Power vs Pulse Time

Pulse Wave Form

OUTLINE AND SCHEMATIC

PAD LAYOUT

INCHES

MILLIMETERS

DIM

MIN

MAX

0.197

0.158

0.069

0.021

0.050

MIN

4.77

3.381

1.35

0.28

0.41

MAX

5.00

4.01

1.75

0.53

1.27

0.188

0.150

0.053

0.011

0.016

0.050 BSC

1.27 BSC

0.006

0.005

0.189

0.228

0.010

0.008

0.206

0.244

0.15

0.10

4.80

5.79

0.25

0.20

5.23

6.19

Unidirectional

Bidirectional

OUTLINE

SCHEMATIC

11-11-2005 REV R

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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