TSMBJ10L05C [MICROSEMI]
Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon;型号: | TSMBJ10L05C |
厂家: | Microsemi |
描述: | Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon |
文件: | 总1页 (文件大小:167K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Scottsdale, AZ
8700 E. Thomas Road
Scottsdale, AZ 85252
(602) 941-6300
TSMBJ10L05C
and
Progress Powered by Technology
TM
Microsemi
TSMBJ10L12C
Umbrella of Protection
Features
Bi-Directional
100 Amp
5 and 12 Volts
Thyristor Surge
Protective
Device
Bidirectional Transient Voltage Protection
•
•
•
•
•
•
•
•
Surge Capabilities up to 100 Amps @ 10/1000µs or 300 Amps @ 8/20µs (note 2, 5)
Positive Resistance Breakover Voltages
Clamping Speeds of Nanoseconds
Oxide-Glass Passivated Junctions
High Off-State Impedance (low leakage) and Low On-State Voltage (crowbar action)
Encapsulating material meets UL94VO Requirements
ISO 9001 Certified
(TSPD)
Maximum Ratings
Operating Temperature: -40°C to +150°C (note 5)
•
Storage Temperature: -65°C to +150°C
Repetitive Off-State Voltage (both directions): See Electrical Characteristics for VDRM
•
•
MECHANICAL
CHARACTERISTICS
CASE STYLE: SMBJ (DO-214AA)
Non-Repetitive Peak Impulse Current (IPPS): 100 A @ 10/1000µs or 300 A @ 8/20µs (note 5)
Non-Repetitive Peak On-State Current (ITSM) @ 8.3ms (one-half cycle): 50 Amps
•
•
and SMBG (DO-215AA)
Electrical Characteristics @ 25°C
SMBJ
SMBG
Rated Peak
Impulse
Current
100 Amps
@ 10/1000ms
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current
Breakdown
Voltage
Breakover
Voltage
On-State
Voltage
Holding
Current
Capacitance
(1MH
Z
)
A
C
A
@ I(BR) = 1mA
(Note 4)
@I
T = 1A
(Note 3)
@VDRM
(Note 1)
(pulsed)
B
B
Part Numbers
(Note 6)
V
DRM
I
DRM
V
(BR)
V
(BO)
V
T
I
H
CO
@ 0
PF
V
Volts
MAX.
5
mA
MAX.
1
Volts
MIN.
8
Volts
MAX.
12.5
25
Volts
MAX.
3.0
mA
MIN.
20
E
MAX.
50
G
F
H
TSMBJ10L05C
TSMBJ10L12C
J
J
12
1
18.5
3.0
20
50
D
Consult factory for additional voltage and holding current tolerance options.
Notes:
INCHES
MILLIMETERS
MIN / MAX
MIN / MAX
.077 / .083
.160 / .180
.130 / .155
.205 / .220
.075 / .095
.235 / .255
.015 / .030
.030 / .060
.038 / .058
1. For rise times less than 1 kV/ms. For very fast rise times up to 1 kV/µs, V(BO) will be 110% ofV(BO) Max., The Max. I(BO) is 750mA.
2. Critical rate of rise of on-state current is 100A/µs Max.
A
B
C
D
E
F
G
H
J
1.96 / 2.10
4.06 / 4.57
3.30 / 3.94
5.21 / 5.59
1.91 / 2.41
5.97 / 6.48
0.38 / 0.76
0.76 / 1.52
0.97 / 1.47
3. Maximum rate of rise of off-state voltage VDRM that will not trigger device is 5kV/µs (T
4. Breakdown voltage V(BR) has a positive temperature coefficient of +0.1%/°C.
5. Above 70°C, derate linearly to zero @ 150°C lead temperature.
6. For different packages or die options replace part number prefix as follows:
“TSMBJ” for surface mount DO-214AA with J-bend (as shown).
“TSMBG” for surface mount DO-215AA with Gull Wing.
“TSH” for DO-13 hermetic axial lead metal package.
J = 70°C).
“TSF” for T-18 axial lead plastic.
“TSEP” for Case 1 axial, 0.040” diameter leads.
“TSES” for Case 2 axial, 0.030” diameter leads.
“TCD” for cellular die package.
“TCH” for chip equivalent in hybrid applications.
ADDITIONAL PACKAGE STYLES:
For other package styles contact
Microsemi Scottsdale’s TSPD Group
for detail package dimensions.
LEAD FINISH:
Solder Dip or Lead Tin Plate.
POLARITY: Bi-directional.
Ⅲ Santa Ana: (714) 979-8220 Ⅲ Scottscale: (602) 941-6300 Ⅲ Colorado: (303) 469-2161 Ⅲ Watertown: (617) 926-0404 Ⅲ Chatsworth: (818) 701-4933
Ⅲ Sertech Labs: (617) 924-9280 Ⅲ Ireland: (353) 65-40044 Ⅲ Bombay: (91) 22-832-002 Ⅲ Hong Kong: (852) 2692-1202
Data Sheet SMCO310A 5/16/97
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