TXPPR1510E [MICROSEMI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon, HERMETIC SEALED, SMD0.5, 3 PIN;
| 型号： | TXPPR1510E |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon, HERMETIC SEALED, SMD0.5, 3 PIN CD 二极管 |
| 文件： | 总2页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PPR1510E
45 VOLTS, 10 AMP
3680 Investment Lane – Riviera Beach, FL 33404
Telephone 1-800-327-6183 – Fax (561) 845-7813
SCHOTTKY RECTIFIER
DESIGNER’S DATA SHEET
FEATURES:
SMD.5
Ø Low Reverse Leakage
Ø Low Forward Voltage Drop
Ø TX, TXV and Space Level Screening Available
Ø Hermetically Sealed Power Surface Mount Package
Ø Guard Ring for Overvoltage protection
Ø Eutectic Die Attach
Ø 175 oC Operating Temperature
MAXIMUM RATINGS
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse and DC Blocking Voltage
VRRM
VRWN
VR
100
Volts
Average Rectified Forward Current
(Resistive Load, 60Hz, Sine Wave, TA = 25oC)
Peak Surge Current
Io
15
Amps
(8.3 ms Pulse, TA = 25oC)
IFSM
250
Amps
oC
Operating and storage temperature
Top & Tstg
-55 to + 175
Maximum Thermal Resistance
oC /W
Junction to Case
2.0
RqJC
FOR MORE INFORMATION CALL 1-800-327-6183
3680 Investment Lane – Riviera Beach, FL 33404
Telephone 1-800-327-6183 – Fax (561) 845-7813
PPR1510E
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
MAX.
UNIT
Instantaneous Forward Voltage Drop
(IF = 5 Adc, TA = 25oC, 300ms Pulse)
(IF = 10 Adc, TA = 25 oC, 300ms Pulse)
Instantaneous Forward Voltage Drop
(IF = 5 Adc, TA = 100 oC, 300ms Pulse)
Reverse Leakage Current
0.780
1.10
VF1
Vdc
0.870
100
10
VF2
IR1
IR2
CJ
Vdc
mA
mA
pF
(Rated VR, TA = 25oC, 300ms pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 100 oC, 300ms pulse minimum)
Junction Capacitance
800
VR = 10 V, TA = 25oC, f = 1 MHz)
CASE OUTLINE: SMD.5
PIN OUT:
PIN 1: CATHODE
PIN 2: ANODE
PIN 3: ANODE
TYPICAL OPERATING CURVES
(TA=25oC Unless otherwise specified)
相关型号：
©2020 ICPDF网 联系我们和版权申明