UES804RHR2E3 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, DO-5, HERMETIC SEALED, METAL PACKAGE-2;
| 型号： | UES804RHR2E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, DO-5, HERMETIC SEALED, METAL PACKAGE-2 功效 二极管 |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UES804 UES804HR2
UES805 UES805HR2
UES806 UES806HR2
ULTRAFAST RECTIFIERS,
High Efficiency, 50ATM
S C O T T S D A L E D I V I S I O N
APPEARANCE
DO-5
DESCRIPTION
The UES804 series of ultrafast high-efficiency rectifiers is specifically
designed for operation in power switching circuits operating at frequencies
of 20 kHz or higher. These devices have demonstrated capability in
passing power-stress testing to 25 thousand cycles with full-rated forward
current turned on and off without a heat sink. This forces case temperature
increases of 75°C at which time the current is removed to simulate worst
case applications. The switching times increase relatively little with
temperature or at different currents.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPLICATIONS / BENEFITS
FEATURES
·
·
·
Very Low Forward Voltage
Very Fast Recovery Times
High Reliability Screening Options with HR2 Suffix
(ie. UES804HR2)
Low Thermal Resistance
Mechanically rugged
Standard Polarity is Cathode to Case. For Reverse
Polarity, Add Suffix R (ie. UES804R)
·
Power Switching Circuits 20 kHz and above
with minimal parasitic switching losses
Catch Diodes for Switching Regulators
Output Rectifiers for High Frequency Square-
Wave Inverters
Extremely Robust in Power Cycling
High Surge Capability
Hermetically Sealed
·
·
·
·
·
·
·
·
ABSOLUTE MAXIMUM RATINGS
MECHANICAL AND PACKAGING
·
·
·
·
·
·
·
Peak Inverse Voltage, UES804, UES804HR2……….200 V
Peak Inverse Voltage, UES805, UES805HR2……….300 V
Peak Inverse Voltage, UES806, UES806HR2……….400 V
Average DC Output Current, IO @ TC = 100oC………50 A
Surge Current, 8.3 ms …………………………………600 A
Thermal Resistance, Junction to Case……………0.8 oC/W
Operating and Storage Temp. Range…….-55oC to +150oC
·
·
Industry Standard DO-5 (DO-203AB) Package
with 11/16 inch Hex and 1/4-28 Threaded Stud
Hermetically Sealed Metal and Glass Case
Body
·
·
·
Metal Surface Finish: Tin Plated
Weight: 15.5 grams (approximate)
Maximum unlubricated stud Torque: 15 inch
pounds
·
·
Angular Orientation of Terminal is Undefined
Marking: Part Number and Logo
ELECTRICAL CHARACTERISTICS
Maximum
Forward
Voltage
Maximum
Maximum
Reverse
Reverse
Working Peak
Reverse
Recovery
Current
Microsemi Part Number
Voltage
Time*
V
F
I
R
t
V
@ 50 A
tp = 300 ms
rr
RWM
@ VRWM
TC = 25oC
1.25 V
TC = 125oC
1.15 V
TC = 25oC
TC = 125oC
UES804
UES805
UES806
UES804HR2
UES805HR2
UES806HR2
200 V
300 V
400 V
50 ns
30 mA
70 mA
* Measured in circuit IF = 0.5 A, IR = 1 A, IREC = 0.25 A
Copyright ã 2003
02-03-2003 REV 0
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
UES804 UES804HR2
UES805 UES805HR2
UES806 UES806HR2
ULTRAFAST RECTIFIERS,
High Efficiency, 50ATM
S C O T T S D A L E D I V I S I O N
GRAPHS and CIRCUIT
Copyright ã 2003
02-03-2003 REV 0
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
UES804 UES804HR2
UES805 UES805HR2
UES806 UES806HR2
ULTRAFAST RECTIFIERS,
High Efficiency, 50ATM
S C O T T S D A L E D I V I S I O N
NOTES:
1.
2.
3.
Oscilloscope: Rise time £ 3ns; input impedance = 50W.
Pulse Generator: Rise time £ 8ns; source impedance 10W.
Current viewing resistor, non-inductive, coaxial
recommended.
OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices.
SCREEN
MIL-STD-750
METHOD
1032
CONDITIONS
1. High Temperature
24 Hours @ TA = 150oC
2. Temperature Cycle
3. Hermetic Seal
1051
F, 20 Cycles, -55 to +150oC. No dwell required @
25oC, T>10 min. @ extremes
a.
b.
Fine Leak
Gross Leak
1071
H, Helium
C, Liquid
4. Thermal Impedance
3101
5. Interim Electrical Parameters
GO/NO GO
As applicable
6. High Temperature Reverse Blocking
7. Final Electrical Parameters
As Applicable
GO/NO GO
t= 48 hours, Tc = 125°C with applicable bias conditions
As applicable
MECHANICAL SPECIFICATIONS
INCHES
.225 +/- .005
.060 MIN.
.156 +/- .020
.156 MIN. FLAT 3.96 MIN. FLAT
MILLIMETERS
5.72 +/- 0.13
1.52 MIN.
A
B
C
D
E
F
3.96 +/- 0.51
.667 DIA. MAX
.090 MAX
16.94 DIA. MAX
2.29 MAX.
G
H
J
K
L
.677 +/- .010
.375 MAX.
.140 MIN. DIA.
1.000 MAX.
.450 MAX.
17.20 +/- 0.25
9.53 MAX.
3.56 MIN. DIA.
25.40 MAX.
11.43 MAX.
11.13 +/- 0.38
1.98 MAX.
Notes:
1.
2.
3.
4.
Cathode is stud
Maximum unlubricated stud torque: 30 inch pounds.
Angular Orientation of terminal is undefined.
Maximum tension (90o) anode terminal 15 pounds for 30
seconds
M
N
.438 +/- .015
.078 MAX.
Copyright ã 2003
02-03-2003 REV 0
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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