UM2104DE3 [MICROSEMI]
Pin Diode, Silicon,;
| 型号： | UM2104DE3 |
| 厂家： | 
Microsemi |
| 描述： | Pin Diode, Silicon, 衰减器 开关 二极管 |
| 文件： | 总9页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
KEY FEATURES
DESCRIPTION
HF band (2-30 MHz) PIN
Long Lifetime (25µs typical)
High Power ( 1kW, CW)
High Isolation (32dB)
UM2100 Series PIN diodes are designed for 60 dBm at 300 kHz with 1 watt per tone. The
transmit/receive switch and attenuator
applications in HF band (2-30MHz) and
forward biased resistance/reactance vs. frequency
characteristics are flat down to 10 kHz. The
below. As series configured switches, these capacitance vs. reverse bias voltage characteristic
long lifetime (25µs typical) diodes can
control up to 2.5 kW, CW in a 50 ohm
system. In HF band, insertion loss is less
than 0.25dB and isolation is greater than
32dB (off-state).
is flat down to 2 MHz.
In attenuator configuration, the UM2100
produces extremely low distortion at low values
of attenuator control current, and very low
insertion loss (0.2dB) in the “0dB” attenuator
state.
Low Loss (0.25dB)
Very Low Distortion (IP3=60dBm)
Voltage ratings to 1000 V
The UM2100 series offers the lowest
distortion performance in both the transmit
and receive modes. Less than 50 mA
forward bias is requires to obtain an IP3 of
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
Condition
PD
θ
APPLICATIONS/BENEFITS
25 OC Pin Temperature
25 W
6 OC/W
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX2101B, etc.
B & E ½ in. total length to 25 OC Contact
12 W
12.5 OC/W
Free Air
2.5 W
C
D
25 OC Stud Temperature
25 OC Stud Temperature
25 OC End Cap Temperature
25 W
18.75 W
15W
6 OC/W
8 OC/W
10 OC/W
SM
All
1 us pulse (Single)
100 kW
-65 OC to + 175 OC
OPERATING AND STORAGE
TEMPERATURE RANGE
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100V
200V
400V
600V
800V
1000V
UM2101
UM2102
UM2104
UM2106
UM2108
UM2110
Copyright 2005
Microsemi
Page 1
Rev. 0, 2005-12-13
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYPICAL
MAX.
2.5
2.0
Units
pF
Ohms
Total Capacitance
Series Resistance
CT
VR=100V, F= 1 MHz
If = 100 mA, F= 2 MHz
1.9
1.0
25
RS
τ
Carrier Lifetime
Reverse Current
IF = 10 mA/100 V
VR = Voltage rating
P=2W total, IF=25mA
F1 = 1.999 MHz
F2 = 2.001 MHz
1.0 W/tone
20
50
µs
IR
10
µA
IP3
dBm
60
Style “B”
Style “SM”
DC current
supply
*
SIGNAL
GENERATOR
RFC
*
*
f1
POWER
SPECTRUM
ANALYZER
SPLITTER
*
f2
SIGNAL
GENERATOR
RFC
* M a y b e c o n t r o l l e d w i t h t h e I E E E - 4 8 8 B U S C I R C U I T
Copyright 2005
Rev. 0, 2005-12-13
Microsemi
Page 2
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
Rs versus If
TYPICAL
2
1
0
10
10
10
f = 2 MHz
-1
10
-1
10
0
1
2
10
10
10
If (mA)
RESISTANCE / REACTANCE VERSUS FREQUENCY
TYPICAL
2.0
1.5
1.0
0.5
0.0
-0.5
If = 100 mA
RESISTANCE
REACTANCE
2
3
4
5
6
7
10
10
10
10
10
10
FREQUENCY (Hz)
Copyright 2005
Microsemi
Page 3
Rev. 0, 2005-12-13
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT
TYPICAL
40
35
30
25
20
15
70
65
60
55
50
45
F1 = F - 1 KHz
F2 = F + 1 KHz
1 MHz
500 KHz
250 KHz
2 MHz
150 KHz
0
1
2
10
10
10
If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA]
CAPACITANCE VERSUS VOLTAGE
TYPICAL
20
10 KHz
18
16
14
12
10
8
100 KHz
200 KHz
400 KHz
1 MHz
6
4
2 MHz
4 MHz
2
10 MHz
0
-1
0
1
2
10
10
10
10
Vr (V)
Copyright 2005
Microsemi
Page 4
Rev. 0, 2005-12-13
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE
TYPICAL
1
0
10
10
-1
10
---------------125C
150C------------
-2
-3
-4
-5
-6
10
10
10
10
10
---------------100C
--------------75C
-----25C
0.0
0.5
1.0
1.5
Vf (V)
Copyright 2005
Microsemi
Page 5
Rev. 0, 2005-12-13
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
STYLE “A”
STYLE “B”
STYLE “C”
STYLE “CR”
Copyright 2005
Microsemi
Page 6
Rev. 0, 2005-12-13
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
STYLE “D”
STYLE “DR”
STYLE “E”
STYLE “SM”
Copyright 2005
Microsemi
Page 7
Rev. 0, 2005-12-13
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
STYLE “SM” FOOTPRINT
Copyright 2005
Microsemi
Page 8
Rev. 0, 2005-12-13
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
NOTES:
Copyright 2005
Microsemi
Page 9
Rev. 0, 2005-12-13
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