UM2310E3 [MICROSEMI]
Pin Diode, Silicon,;
| 型号： | UM2310E3 |
| 厂家： | 
Microsemi |
| 描述： | Pin Diode, Silicon, |
| 文件： | 总5页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM2300
Features
PIN DIODE
SWITCH
•
•
•
•
•
LF band (100 KHz) PIN
Long Lifetime (80 µs typ.)
High Power (1 KW CW),
Low Loss (0.2 dB),
• High Isolation (35 dB)
• Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80 µS typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘off ’state).
130
120
110
100
90
80
70
60
50
100 KHz
200 KHz
400 KHz
40
30
1 MHz
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
20
10
0
2 MHz
4 MHz
0
20
40
60
80 100 120 140 160 180 200
Vr (VOLTS)
Voltage Ratings (25°C)
Reverse Voltage ( VR )
DEVICE
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘ 0 dB ’ attenuator state.
@ IR = 10 µA
100 VOLTS............ UM2301
200 VOLTS............ UM2302
400 VOLTS............ UM2304
600 VOLTS............ UM2306
800 VOLTS............ UM2308
1000 VOLTS............ UM2310
Electrical Specifications (25°C)
Test
Diode Resistance RS
Capacitance CT
Reverse Current IR
Carrier Lifetime τ
IP3
Min.
Typ.
0.3
15
Max.
0.4
20
Units
Conditions
F1 = 1 MHz, 100 mA
F2 = 1 MHz, 100 V
Ω
pF
10
@ Rated Voltage
µA
60
50
80
60
If = 10 mA / 100 V
µs
dBm
2 WATT total, If =25 mA
F1 =0.999 MHz, F2 =1.001 MHz
1.0 WATT/ tone
Thermal Resistance
1.0
°C / W
25°C Stud Temperature
MSCOXXXA 10-26-04
DSW UM2300 <A
>(34989)
UM2300
TYPICAL IR vs VR
TYPICAL I-V CURVE
-2
-3
-4
-5
-6
-7
-8
2
1
0
10
10
10
10
10
10
10
10
10
10
150 oC
125 oC
150 oC
125 oC
100 oC
75 oC
100 oC
75 oC
-1
10
10
10
10
10
10
50 oC
50 oC
-2
-3
-4
-5
-6
25 oC
25 oC
0
100 200 300 400 500 600 700 800 900 1000
VR (Volts)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vf [VOLTS]
TYPICAL RS vs FORWARD BIAS CURRENT
TYPICAL Rp vs REVERSE VOLTAGE
9
1000
100
10
10
10KHz
20KHz
40KHz
8
7
6
5
4
3
10
100KHz
200KHz
400KHz
10
10
10
10
10
1MHz
2MHz
4MHz
1
10MHz
.1
.01
.1
1
10
100
0
10
1
2
10
REVERSE VOLTAGE (VOLTS)
10
If (mA)
MSCOXXXA 11-10-04
DSW UM2300 <a
>(34989)
UM2300
TYPICAL TCVf vs If
TYPICAL THERMAL IMPEDANCE
No Heatsink
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
10
1
DELTA
125 oC
With Heatsink
.1
.01
-3
-2
-1
0
1
1
10
100
1000
10
10
10
If [AMPERES]
10
10
Pt - PULSE TIME - (ms)
TYPICAL POWER LEVEL vs FORWARD BIAS CURRENT
40
35
30
25
20
15
70
65
60
55
50
45
f1 = F +/- 1 KHz
f2 = F +/- 1 KHz
250KHz
500KHz
150KHz
TAU = 0.1 ms
1
2
3
4
5
6
7
8
10
If NEEDED TO OBTAIN AN IM3 OF - 60 dBc (mA)
MSCOXXXA 11-10-04
DSW UM2300 <A
>(34989)
UM2300
UM2300
MSCOXXXA 11-10-04
DSW UM2300 <A
>(34989)
UM2300
UM2300S
MSCOXXXA 11-10-04
DSW UM2300 <A
>(34989)
相关型号：
©2020 ICPDF网 联系我们和版权申明