UM6610SM [MICROSEMI]
Pin Diode, 1000V V(BR), Silicon,;
| 型号： | UM6610SM |
| 厂家： | 
Microsemi |
| 描述： | Pin Diode, 1000V V(BR), Silicon, |
| 文件： | 总10页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM6000 / UM6200/UM6600
POWER PIN DIODES
KEY FEATURES
DESCRIPTION
Voltage ratings to 1000V
These series of PIN diodes are designed for used successfully in switches in which low
applications requiring small package size
and moderate average power handling
capability. The low capacitance of the
UM6000 and UM6600 allows them to be
insertion loss at low bias current is required.
The “A” style package for this series is the
smallest Microsemi PIN diode package. It has
been used successfully in many microwave
Average power dissipation to 6 W
Series resistance as low as 0.4 Ω
Carrier lifetime greater than 1.0 µs
Non cavity design
used as series switching elements to 1 GHz. applications using coaxial, microstrip, and
The low resistance of the UM6200 is useful stripline techniques at frequencies beyond X-
in applications where forward bias current
must be minimized.
Band. The “B” and “E” style leaded packages
offer the highest available power dissipation for a
Thermally matched configuration
Low capacitance at 0 V bias
Low conductance at 0 V bias
Because of its thick I-region width and long package this small. They have been used
lifetime the UM6000 and UM6600 have
been used in distortion sensitive and high
extensively as series switch elements in
microstrip circuits. The “C” style package
peak power applications, including receiver duplicates the physical outline available in
protectors, TACN, and IFF equipment.
Their low capacitance allows them to be
useful as attenuator diodes at frequencies
greater than 1 GHz. The UM6200 has been
conventional ceramic-metal packages but
incorporates the many reliability advantages of
the Microsemi construction.
Compatible with automatic insertion
equipment
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX6001B, etc.
Package
Condition
UM6000/UM6600
UM6200
PD
θ
PD
θ
A & C 25 OC Pin Temperature
6 W
25 OC/W
4 W 37.5 oC/W
2.0 W 75 oC/W
0.5 W
B & E ½ in. total length to 25 OC Contact 2.5 W
60 OC/W
0.5 W
Free Air
SM
All
25 OC End Cap Temperature
4.5 W
27.5OC/W 3.0 W 42.5 oC/W
UM6000 25 kW
UM6600 13 kW
1 us pulse (Single)
10 kW
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100
200
UM6001
UM6002
-
UM6006
UM6010
UM6201
UM6601
UM6602
-
UM6606
UM6610
UM6202
400
UM6204
800
-
-
1000
Copyright 2005
Microsemi
Page 1
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol Conditions
UM6600
UM6000
UM6200
Units
Reverse Current (Max)
Series Resistance(Max)
10
10
IR
RS
CT
Rp
τ
At rated voltage
If = 100 mA, F= 100 MHz
VR = 100 V, F = 1 MHZ
VR = 100 V, F = 100 MHz
IF = 10 mA
10
0.4
1.1
350k
0.6
uA
Ohms
pF
Ohms
us
2.5
1.7
Capacitance (Max)
0.4
300k
1.0
0.5
300k
1.0
Parallel Resistance(Min)
Carrier Lifetime(Min)
W
I-Region Width (Min)
-
150
150
40
um
Style “B”
Style “SM”
UM6000/UM6200/UM6600
Rs versus If
f = 100 MHz
5
4
3
2
1
0
10
10
10
10
10
10
UM6600
UM6000
UM6200
-1
10
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
If (A)
Copyright 2005
Microsemi
Page 2
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200/UM6600
FORWARD VOLTAGE versus CURRENT
0
10
-1
-2
-3
-4
-5
10
10
10
10
10
UM6200
UM6000
UM6600
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE
UM6000/UM6600
Rp versus Vr
3
2
1
0
10
10
10
10
f = 100 MHz
f = 500 MHz
f = 1 GHz
f = 3 GHz
0
1
2
3
10
10
10
10
Vr (Volts)
Copyright 2005
Microsemi
Page 3
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6200
Rp versus Vr
3
2
1
0
10
10
10
10
f = 100 MHz
f = 500 MHz
f = 1 GHz
f = 3 GHz
0
1
2
3
10
10
10
10
Vr (Volts)
UM6000
Ct versus Vr
1.5
1.0
0.5
0.0
f = 1 MHz
f = 5 MHz
f = 10 MHz
f => 100 MHz
1
10
100
250
Vr (Volts)
Copyright 2005
Microsemi
Page 4
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6200
Ct versus Vr
1.4
1.3
1.2
1.1
1.0
0.9
0.8
f = 1 MHz
f = 10 MHz
f = 100 MHz
f = 500 MHz
1
10
100
Vr (Volts)
UM6600
Ct versus Vr
0.8
0.7
0.6
0.5
0.4
0.3
0.2
f = 1 MHz
f = 5 MHz
f = 10 MHz
f = 100 MHz
1
10
100
Vr (Volts)
Copyright 2005
Microsemi
Page 5
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200
MAX POWER DISSIPATION versus LEAD TEMPERATURE
5.0
4.0
3.0
2.0
1.0
0.0
L = 1/4"
L = 3/8"
L = 1/2"
L = 5/8"
L = 3/4"
0
25
50
75
100
125
150
175
T LEAD TEMPERATURE (oC)
L
UM6600
MAX POWER DISSIPATION versus LEAD TEMPERATURE
5.0
4.0
3.0
2.0
1.0
0.0
L = 1/4"
L = 3/8"
L = 1/2"
L = 5/8"
L = 3/4"
0
25
50
75
100
125
150
175
T LEAD TEMPERATURE (oC)
L
Copyright 2005
Microsemi
Page 6
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200/UM6600
AVERGE POWER DISSIPATION versus TEMPERATURE
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
UM6000 AND
UM6200 SERIES
UM6600
-50
-25
0
25
50
o
75
100
125
150
175
TEMPERATURE ( C) (OFONE METAL PIN)
UM6000/UM6200/UM6600
PULSE THERMAL IMPEDANCE VS PULSE WIDTH
2
10
10
10
o
1
0
UM6200
UM6000
------UM6600
-1
10
10
-2
-6
10
-5
10
-4
10
-3
-2
-1
0
10
10
10
10
PULSE WIDTH (SEC)
Copyright 2005
Microsemi
Page 7
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
STYLE “A”
STYLE “B”
STYLE “E”
STYLE “C”
STYLE “D”
Copyright 2005
Microsemi
Page 8
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200/UM6600
UM6000/UM6200/UM6600 STYLE “SM” FOOTPRINT
Copyright 2005
Microsemi
Page 9
Rev. 0, 2006-03-13
UM6000 / UM6200/UM6600
POWER PIN DIODES
NOTES:
1. These dimensions will match the terminals and provide for additional solder fillets at the outboard ends at
least as wide as the terminals themselves, assuming accuracy of placement within 0.005”
2. If the mounting method chosen requires use of an adhesive separate from the solder compound, a round
(or square) spot of cement as shown should be centrally located.
NOTES:
Copyright 2005
Rev. 0, 2006-03-13
Microsemi
Page 10
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