UM9441 [MICROSEMI]
PIN RADIATION DETECTORS; PIN辐射探测器
| 型号： | UM9441 |
| 厂家： | 
Microsemi |
| 描述： | PIN RADIATION DETECTORS |
| 文件： | 总4页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM9441
PIN RADIATION DETECTORS
KEY FEATURES
DESCRIPTION
High Photocurrent Sensitivity
High Reliability Construction
Fast Rise Time
Description
temperature so long as applied voltage
exceeds the saturation voltage. This
structure also minimizes the effects of
Silicon PIN devices are effective
detectors of nuclear and
electromagnetic radiation. This includes permanent damage caused by neutrons and
gamma radiation, electrons, and X-rays. other high energy radiation. Experiments on
The detectors can be used across the
devices of the UM9441 design show no
Wide Dynamic Range
temperature range of -55 oC to +175 oC degradation in gamma sensitivity resulting
instead of being restricted to use at low from a total dose of 1014 neutrons/cm2 of
Hardness to Neutron
temperatures.
1 MeV equivalent.
Bombardment
The absorbed radiation produces
electron-hole pairs in the space charge
Package
Low operating Voltage
The UM9441 is an axially leaded device
region. These charges are swept out by constructed by metallurgically bonding the
the applied field and result in a current PIN chip in between two molybdenum
flow proportional to the rate of
absorbed radiation.
refractory pins that are typically 0.125
inches in diameter and 0.050 inches long.
Hyper-pure glass is then fused over this
bond to form a void less seal. Leads are then
brazed to ends of molybdenum pins. This
results in a high-reliability package using
The Microsemi UM9441 series
utilizes high resistivity material and is
designed to have a uniform area mesa
structure to define the active volume.
APPLICATIONS/BENEFITS
Surface Mount package available
The current sensitivity of this device is materials so well thermally matched that the
proportional only to the I-region
volume and is independent of
UM9441 can withstand temperature shock
or cycling from -196 oC to +300 oC.
RoHS compliant devices
available
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Reverse Voltage
Photocurrent
Storage Temperature
V R
100
3Adc
-55 to +200
V
3A2s pulsed
ºC
T stg
T op
Operating Temperature
-55 to +175
ºC
Copyright 2006
Rev. 0, 2006-03-14
Microsemi
Page 1
UM9441
PIN RADIATION DETECTORS
Parameter
Conditions
Min Typ.
Max Units
VR = 50 V
106 rads(Si)/sec
2.5 MeV Flash X-Ray
Ion Physics Corporation
FX-25
Photocurrent
4.0
2.0
6.0
mA
Capacitance
F = 1 MHz, V = 50 V
VR = 50 V
10
pF
µA
µs
Reverse Current
Minority Carrier Lifetime
1.0
IF = 10 mA
PHOTOCURRENT SENSITIVITY
TYPICAL
VOLTAGE SENSITIVITY
TYPICAL
3
2
1
10
10
10
10
10
RADIATION SOURCE - AS NOTED
8
7
FLASH X-RAY
PIN REVERSE VOLTAGE 50 V
FX-25
6
5
4
3
LINAC
LINAC
2
1
ABSORBED DOSE RATE - 1E6 [rads(Si)/sec]
RADIATION SOURCE - AS NOTED
0
0
25
50
75
100
5
6
7
8
10
10
10
10
PIN REVERSE VOLTAGE (V)
ABSORBED DOSE RATE [rads(Si)/sec]
Copyright 2006
Microsemi
Page 2
Rev. 0, 2006-03-14
UM9441
PIN RADIATION DETECTORS
Reliability
The UM9441 is consistent with Microsemi’s
reputation as a manufacturer of high reliability
semiconductors. Microsemi is equipped to
perform JAN type testing, base-lining and
documental conformance to a wide range of
reliability testing. This commitment to reliability
has enabled Microsemi to be a qualified supplier
of semiconductor devices to many high-reliability
programs such as:
APOLLO
MINUTEMAN
SPRINT
DRAGON
HAWK
TRIDENT
VIKING
MARINER
Copyright 2006
Rev. 0, 2006-03-14
Microsemi
Page 3
UM9441
PIN RADIATION DETECTORS
NOTES:
Copyright 2006
Microsemi
Page 4
Rev. 0, 2006-03-14
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