UPS5100 [MICROSEMI]

5 A High Voltage Schottky Barrier Rectifier; 5高电压肖特基整流器


型号：	UPS5100
厂家：	Microsemi
描述：	5 A High Voltage Schottky Barrier Rectifier 5高电压肖特基整流器整流二极管功效
文件：	总6页 (文件大小：150K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UPS5100

5 A High Voltage Schottky Barrier Rectifier

KEY FEATURES

DESCRIPTION

In Microsemi’s new Powermite3^®SMT

In addition to its size advantages,

ꢀ High power surface mount

package, these high efficiency ultrafast Powermite3^®package features include a full

package.

ꢀ Guard Ring die construction for

transient protection.

ꢀ Silicon Schottky rectifiers no

reverse voltage recovery.

ꢀ Internal heat sink locking tabs

ꢀ Low forward voltage.

ꢀ Full metallic bottom eliminates

flux entrapment

rectifiers offer the power handing

capabilities previously found only in

much larger packages. They are ideal

for SMD applications that operate at

high frequencies.

metallic bottom that eliminates the

possibility of solder flux entrapment during

assembly, and a unique locking tab acts as

an integral heat sink. Its innovative design

makes this device ideal for use with

automatic insertion equipment.

ꢀ Compatible with automatic

insertion equipment

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

ꢀ Low profile-maximum height of

1mm supplied in 16 mm tape

reel- 5000 units/ 13” reel.

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

100

APPLICATIONS/BENEFITS

ꢀ Switching and Regulating Power

Supplies.

ꢀ Charge Pump Circuits.

ꢀ Reduces reverse recovery loss

RMS Reverse Voltage

V _{R (RMS)}

I_o

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on Rated Load@ T_c=80 ºC

I_FSM

100

due to low I_RM

ꢀ Small foot print

190 X 300 mils

1:1 Actual size

Storage Temperature

Operating Temperature

T stg

T op

-65 to +150

-65 to +125

ºC

THERMAL CHARACTERISTICS

(UNLESS OTHERWISE SPECIFIED)

Thermal Resistance

Junction-to Bottom

Rja (1)

2.5

ºC/Watt

(1) When Mounted on PC board with 2 ounce copper pattern.

Rev. 0, 2003-02-12

Microsemi

Page 1

UPS5100

5 A High Voltage Schottky Barrier Rectifier

ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)

Parameter

Symbol Conditions

Min Typ.

Max Units

Forward Voltage (Note 1)

I_F= 5 A , T_j= 25 ºC

0.75

0.58

0.84

0.67

0.81

0.64

0.90

0.73

I_F= 5 A , T_j= 125 ºC

I_F= 10 A , T_j= 25 ºC

I_F= 10 A , T_j= 125 ºC

V_Fm

Reverse Break Down Voltage

(Note 1)

V_BR

I_R= 0.2 mA

100

Reverse Current (Note1)

V_R= 100V, T_j= 25ºC

V_R= 100V, T_j= 125 ºC

200

µA

I_rm

C_T

Capacitance

V_R= 4 V; F = 1 MH_Z

150

Note: 1 Short duration test pulse used to minimize self – heating effect.

Rev. 0, 2003-02-12

Microsemi

Page 2

UPS5100

5 A High Voltage Schottky Barrier Rectifier

PAD LAYOUT

Rev. 0, 2003-02-12

Microsemi

Page 3

UPS5100

5 A High Voltage Schottky Barrier Rectifier

16 mm TAPE

13 INCH REEL

PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production

data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express

written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve

preliminary or production status and product specifications, configurations, and availability may

change at any time.

Rev. 0, 2003-02-12

Microsemi

Page 4

UPS5100

5 A High Voltage Schottky Barrier Rectifier

NOTES:

Rev. 0, 2003-02-12

Microsemi

Page 5

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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