UPT33TR7E3 [MICROSEMI]

Trans Voltage Suppressor Diode, 150W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2;
UPT33TR7E3
型号: UPT33TR7E3
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode, 150W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2

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UPT5e3 – UPT48e3  
UPT5Re3 – UPT48Re3  
UPTB8e3 – UPTB48e3  
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSORS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
Microsemi’s new Powermite UPT series transient voltage suppressors  
feature oxide-passivated chips, with high-temperature solder bonds for high  
surge capability, and negligible electrical degradation under repeated surge  
conditions. Both unidirectional and bidirectional configurations are available.  
In addition to its size advantages, Powermite package includes a full  
metallic bottom (cathode) that eliminates possibility of solder flux entrapment  
at assembly and a unique locking tab serving as an integral heat sink.  
DO-216AA  
Innovative design makes this device fully compatible for use with automatic  
insertion equipment.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Powermite Package with standoff voltages 5 to 48 V  
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Both Unidirectional polarities and Bidirectional:  
Anode to case bottom (UPT5e3 thru UPT48e3)  
Cathode to case bottom (UPT5Re3 thru UPT48Re3)  
Bidirectional (UPTB8e3 thru UPTB48e3)  
Protection from switching transients & induced RF  
New improved lower leakage current for the  
UPT5Re3  
Clamping time less than 100 pico-seconds for  
unidirectional  
Integral heat sink / locking tabs  
Full metallic bottom eliminates flux entrapment  
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, or JANTXV are available by  
adding MQ, MX, or MV, prefixes respectively to part  
numbers, e.g. MXUPT15e3, MVUPTB28e3,  
MSPUPU10e3, etc.  
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Class 1: UPT5//UPT5R/UPTB8 to17  
Class 2: UPT5//UPT5R/UPTB8 to12  
(also add e3 suffix to each part number)  
RoHS Compliant with e3 suffix part number  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
CASE: Void-free transfer molded thermosetting  
epoxy compound meeting UL94V-0  
FINISH: Annealed matte-Tin plating over copper  
and readily solderable per MIL-STD-750, method  
2026  
Operating and Storage Temperature: –65ºC to  
+150ºC  
Peak Pulse Power at 8/20 µs (See Figure 1 and 2)  
UPT5Re3: 600 Watts  
UPT5e3 thru UPT48e3: 1000 Watts  
UPT8Re3 thru UPT48Re3: 1000 Watts  
UPTB8e3 thru UPTB48e3: 1000 Watts  
Peak Pulse Power at 10/1000 µs (See Figure 2).  
UPT5Re3: 100 Watts  
POLARITY: Cathode or anode to TAB 1 (bottom)  
as described in Marking below and Figure 5  
MARKING:  
Anode to TAB 1: T plus the last two digits of part  
number, e.g. UPT5e3 is T05, UPT12e3 is T12▪  
Cathode to TAB1: U plus last two digits of part  
number, e.g. UPT5Re3 is U05, UPT12Re3 is U12▪  
Bipolar: B plus the last two digits of part number,  
e.g. UPTB8e3 is B08, UPTB12e3 is B12, etc.  
Please note dot suffix (for e3 suffix)  
UPT5e3 thru UPT48e3: 150 Watts  
UPT8Re3 thru UPT48Re3: 150 Watts  
UPTB8e3 thru UPTB48e3: 150 Watts  
Impulse Repetition Rate (duty factor): 0.01%  
WEIGHT: 0.016 gram (approximate)  
Thermal resistance: 15ºC/W junction to base tab or  
240ºC/W junction to ambient when mounted on FR4  
PC board with 1 oz copper  
See package dimension on last page  
Tape & Reel option: Standard per EIA-481-B using  
12 mm tape with 3,000 per 7 inch reel or 12,000  
per 13 inch reel (add TR7 or TR13 suffix to part  
number)  
Steady-State Power: 2.5 Watts (base tab 112ºC)  
Solder Temperatures: 260ºC for 10 s (maximum)  
Copyright © 2007  
6-26-2007 REV G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
UPT5e3 – UPT48e3  
UPT5Re3 – UPT48Re3  
UPTB8e3 – UPTB48e3  
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSORS  
S C O T T S D A L E D I V I S I O N  
ELECTRICAL CHARACTERISTICS @ 25oC  
RATED  
MINIMUM  
MAXIMUM  
STANDBY  
CURRENT  
MAXIMUM  
PEAK  
PULSE  
CURRENT*  
IPP  
MAXIMUM  
CLAMPING  
VOLTAGE  
MAXIMUM  
TEMP.  
COEFFICIENT  
STANDOFF  
VOLTAGE  
BREAKDOWN  
VOLTAGE  
DEVICE TYPE  
(add e3 suffix)  
of V(BR)  
VWM  
V
(BR) @ 1 mA  
ID @ VWM  
VC @ 10A*  
αV(BR)  
%/oC  
.030  
.030  
.040  
.045  
.050  
.055  
.060  
.070  
.075  
.080  
.090  
Unidirectional  
Bi-directional  
V
5
V
6.0  
6.0  
9.0  
11.0  
13.8  
16.7  
19.0  
28.4  
31.0  
36.8  
54.0  
A
89.4  
60  
V
9.5  
9.5  
μA  
50  
5
2
2
1
1
1
1
UPT5  
UPT5R  
5
UPT8 & UPT8R  
UPT10 & UPT10R  
UPT12 &UPT12R  
UPT15 & UPT15R  
UPT17 & UPT17R  
UPT24 & UPT24R  
UPT28 &UPT28R  
UPT33 &UPT33R  
UPT48 &UPT48R  
UPTB8  
UPTB10  
UPTB12  
UPTB15  
UPTB17  
UPTB24  
UPTB28  
UPTB33  
UPTB48  
8
62.1  
47.2  
40.3  
33.9  
30.8  
22.0  
19.2  
16.4  
11.2  
13.7  
18.0  
21.6  
26.0  
29.2  
43.2  
47.8  
56.7  
84.3  
10  
12  
15  
17  
24  
28  
33  
48  
1
1
1
* See Figure 1 for IPP waveform of 8/20 µs  
SYMBOLS & DEFINITIONS  
Symbol  
V(BR)  
Definition  
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.  
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating  
temperature range.  
VWM  
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.  
PPP  
ID  
IPP  
C
Standby Current: The maximum current that will flow at the specified voltage and temperature.  
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.  
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.  
OUTLINE AND CIRCUIT  
tp: Pulse time duration is defined as  
that point where the pulse current  
EXPONENTIAL PULSE  
(Pulse time duration is defined as  
that point where the pulse current  
decays to 50% of IPP  
.
(Rise time to 100% of IPP = 8μs.)  
decays to 50% of IPP.)  
t – TIME – (μs)  
tp – PULSE TIME  
FIGURE 1  
FIGURE 2  
Pulse Waveform for Exponential Surge  
Peak Pulse Power vs. Pulse Duration  
Copyright © 2007  
6-26-2007 REV G  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
UPT5e3 – UPT48e3  
UPT5Re3 – UPT48Re3  
UPTB8e3 – UPTB48e3  
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSORS  
S C O T T S D A L E D I V I S I O N  
measured at zero bias  
measured at VWM  
TEMPERATURE – (oC)  
VWM – STAND-OFF VOLTAGE – (V)  
FIGURE 4  
FIGURE 3  
Derating Curve  
Typical Capacitance vs. Stand-Off Voltage  
DIMENSIONS  
All dimensions +/-.005 inches  
MOUNTING PAD in inches  
FIGURE 5  
Copyright © 2007  
6-26-2007 REV G  
Microsemi  
Page 3  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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