UPTB5TR7 [MICROSEMI]
Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216AA, PLASTIC, POWERMITE-2;
| 型号： | UPTB5TR7 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 100W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-216AA, PLASTIC, POWERMITE-2 |
| 文件： | 总3页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UPT5Re3 – UPT48Re3
UPTB5e3 – UPTB48e3
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
Microsemi’s new Powermite UPT series transient voltage suppressors
feature oxide-passivated chips, with high-temperature solder bonds for high
surge capability, and negligible electrical degradation under repeated surge
conditions. Both unidirectional and bidirectional configurations are available.
In addition to its size advantages, Powermite package includes a full
metallic bottom (cathode) that eliminates the possibility of solder flux
entrapment at assembly and a unique locking tab serving as an integral heat
sink.
DO-216AA
Innovative design makes this device fully compatible for use with automatic
insertion equipment.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
Powermite Package with standoff voltages 5 to 48 V
•
•
•
•
•
Protects sensitive components such as IC’s,
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Both unidirectional and Bidirectional Versions
Available as “UPTR” and “UPTB” respectively
Protection from switching transients & induced
RF
•
•
•
•
•
Peak Pulse Power 1000 W for 8/20 µs pulse
Clamping Time in pico-seconds
New improved lower leakage current for the
UPT5R & UPT5B
Integral heat sink / locking tabs
Compliant to IEC61000-4-2 and IEC61000-4-4
for ESD and EFT protection respectively
Full metallic bottom eliminates flux entrapment
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
•
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, or JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers, e.g. MXUPT15Re3,
MVUPTB28e3, MSPUPT10Re3, etc.
Class 1: UPTR/UPTB5 to 17
Class 2: UPTR/UPTB5 to 12
•
RoHS Compliant with e3 suffix part number
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
CASE: Void-free transfer molded thermosetting
epoxy compound meeting UL94V-0
FINISH: Annealed matte-Tin plating over copper
and readily solderable per MIL-STD-750, method
2026
POLARITY: Cathode to case (bottom TAB 1)
MARKING: The last three digits of part number,
e.g. UPT5R is T05▪, UPT12R is T12▪, UPT24 is
T24▪, UPTB5 is TB05▪, UPTB12 is B12▪, UPTB24
is B24▪, etc. Please note dot suffix (for e3 suffix)
WEIGHT: 0.016 gram (approximate)
•
•
Operating and Storage Temperature: –65ºC to
+150ºC
Peak Pulse Power at 8/20 µs (See Figure 1 and 2)
UPT5R & UPT5B:
600 Watts
UPT8R thru UPT48R: 1000 Watts
UPTB8 thru UPTB48: 1000 Watts
•
•
•
Peak Pulse Power at 10/1000 µs (See Figure 2).
UPT5R & UPT5B:
100 Watts
UPT8R thru UPT48R: 150 Watts
UPTB8 thru UPTB48: 150 Watts
•
•
•
See package dimension on last page
•
•
Impulse Repetition Rate (duty factor): 0.01%
Tape & Reel option: Standard per EIA-481-B
using 12 mm tape with 3,000 per 7 inch reel or
12,000 per 13 inch reel (add TR7 or TR13 suffix to
part number)
Thermal resistance: 15ºC/W junction to base tab or
240ºC/W junction to ambient when mounted on FR4
PC board with 1 oz copper
•
•
Steady-State Power: 2.5 Watts (base tab ≤112ºC)
Solder Temperatures: 260ºC for 10 s (maximum)
Copyright © 2006
2-13-2006 REV C
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
UPT5Re3 – UPT48Re3
UPTB5e3 – UPTB48e3
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC
RATED
MINIMUM
MAXIMUM
STANDBY
CURRENT
MAXIMUM
PEAK
PULSE
CURRENT*
IPP
MAXIMUM
CLAMPING
VOLTAGE
MAXIMUM
TEMP.
COEFFICIENT
STANDOFF
VOLTAGE
BREAKDOWN
VOLTAGE
DEVICE TYPE
of V(BR)
VWM
V(BR) @ 1 mA
ID @ VWM
VC @ 10A*
αV(BR)
%/oC
.030
.040
.045
.050
.055
.060
.070
.075
.080
.090
Unidirectional
Bi-directional
UPTB5
V
5
8
V
6.0
9.0
A
60
V
9.5
μA
5
2
2
1
1
1
1
1
UPT5R
UPT8R
UPTB8
62.1
47.2
40.3
33.9
30.8
22.0
19.2
16.4
11.2
13.7
18.0
21.6
26.0
29.2
43.2
47.8
56.7
84.3
UPT10R
UPT12R
UPT15R
UPT17R
UPT24R
UPT28R
UPT33R
UPT48R
UPTB10
UPTB12
UPTB15
UPTB17
UPTB24
UPTB28
UPTB33
UPTB48
10
12
15
17
24
28
33
48
11.0
13.8
16.7
19.0
28.4
31.0
36.8
54.0
1
1
* See Figure 1 for IPP waveform of 8/20 µs
SYMBOLS & DEFINITIONS
Symbol
V(BR)
Definition
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VWM
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.
PPP
ID
IPP
C
Standby Current: The maximum current that will flow at the specified voltage and temperature.
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
OUTLINE AND CIRCUIT
tp: Pulse time duration is defined as
that point where the pulse current
decays to 50% of IPP
.
EXPONENTIAL PULSE
(Pulse time duration is defined as
that point where the pulse current
(Rise time to 100% of IPP = 8μs.)
decays to 50% of IPP.)
t – TIME – (μs)
tp – PULSE TIME
FIGURE 1
FIGURE 2
Pulse Waveform for Exponential Surge
Peak Pulse Power vs. Pulse Duration
Copyright © 2006
2-13-2006 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
UPT5Re3 – UPT48Re3
UPTB5e3 – UPTB48e3
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
S C O T T S D A L E D I V I S I O N
measured at zero bias
measured at VWM
TEMPERATURE – (oC)
VWM – STAND-OFF VOLTAGE – (V)
FIGURE 4
FIGURE 3
Derating Curve
Typical Capacitance vs. Stand-Off Voltage
DIMENSIONS
All dimensions +/-.005 inches
MOUNTING PAD in inches
Copyright © 2006
2-13-2006 REV C
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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