USB50815E3TR [MICROSEMI]
Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 2 Element, Silicon, ROHS COMPLIANT, PLASTIC, SOP-8;
| 型号： | USB50815E3TR |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Unidirectional, 2 Element, Silicon, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件： | 总2页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
USB50803 thru USB50824, e3
Unidirectional Low Capacitance TVSarray ™
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8
configuration’ giving protection to 2 Unidirectional data or interface lines. It is
designed for use in applications where very low capacitance protection is required
at the board level from voltage transients caused by electrostatic discharge
(ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC
61000-4-4 and effects of secondary lightning. It is also available with either Tin-
Lead plated terminations or as RoHS Compliant with annealed matte-Tin finish by
adding an “e3” suffix to the part number*.
Using the schematic on the second page, pins 7 & 8 are tied together for the first
protected positive line, and pins 1 & 2 are tied together to the ground. The same
would then occur where pins 5 & 6 are tied together for a second protected positive
line and pins 2 & 3 are tied together to the ground. If protecting a negative line with
respect to ground, these may be switched in polarity connections where the pins are
tied together in this manner for Unidirectional protection.
SO–8
These TVS arrays have a peak power rating of 500 watts for an 8/20 μsec pulse.
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS
(USB) and I/O transceivers. The USB508XX product provides board level protection
from static electricity and other induced voltage surges that can damage or upset
sensitive circuitry.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
Protects up to 2 unidirectional lines
•
EIA-RS485 data rates:
5 Mbs
10 Base T Ethernet
Surge protection per IEC 61000-4-2, IEC 61000-4-4
Provides electrically isolated protection
UL 94V-0 Flamability Classification
RoHS Compliant devices available by adding “e3” suffix
ULTRA LOW CAPACITANCE 3 pF per line pair
ULTRA LOW LEAKAGE
•
•
•
•
•
USB date rate: 900 Mbs
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
Carrier tubes; 95 pcs (STANDARD)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)
Pulse Repetition Rate: < .01%
•
•
•
•
Molded SO-8 Surface Mount
Weight 0.066 grams (approximate)
Marking: Logo, device marking code*, date code
Pin #1 defined by dot on top of package
Solder Temperatures: 260ºC for 10 s (maximum)
ELECTRICAL CHARACTERISTICS
STAND OFF
VOLTAGE
VWM
BREAKDOWN
VOLTAGE
VBR
CLAMPING
VOLTAGE
VC
@ 1 Amp
(Figure 2)
VOLTS
CLAMPING
VOLTAGE
VC
@ 5 Amp
(Figure 2)
VOLTS
STANDBY
CURRENT
ID
CAPACITANCE
(f=1 MHz)
C
TEMPERATURE
COEFFICIENT
OF VBR
DEVICE
MARKING*
PART
NUMBER
@1 mA
@ VWM
@0V
αVBR
VOLTS
MAX
3.3
VOLTS
MIN
4
µA
MAX
200
20
1
pF
MAX
3
mV/°C
MAX
-5
MAX
8
MAX
11
USB50803
USB50805
USB50812
USB50815
USB50824
AF
AG
AH
AJ
5.0
6.0
10.8
19
13
3
3
1
12.0
15.0
24.0
13.3
16.7
26.7
26
8
24
32
1
3
3
11
AK
43
57
1
28
* Device marking has an e3 suffix added for the RoHS Compliant option, e.g. AFe3, AGe3, AHe3, AJe3, and AKe3.
Copyright © 2005
6-28-2005 REV G
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
USB50803 thru USB50824, e3
Unidirectional Low Capacitance TVSarray ™
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Definition
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 µs.
Symbol
VWM
VBR
VC
ID
C
Standby Current: Leakage current at VWM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
GRAPHS
8/20µs 500W Pulse
Figure 1
Peak Pulse Power Vs Pulse Time t = µsec
Figure 2
Pulse Wave Form
OUTLINE AND SCHEMATIC
INCHES
MILLIMETERS
MIN MAX
DIM
PAD LAYOUT
MIN
MAX
0.197
0.158
0.069
0.021
0.050
A
B
C
D
F
0.188
0.150
0.053
0.011
0.0160
4.77
3.81
1.35
0.28
0.41
5.00
4.01
1.75
0.53
1.27
G
J
K
L
0.050 BSC
1.27 BSC
0.006
0.004
0.189
0.228
0.010
0.008
0.206
0.244
0.15
0.10
4.80
5.79
0.25
0.20
5.23
6.19
P
OUTLINE
SCHEMATIC
Copyright © 2005
6-28-2005 REV G
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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