W3E64M16S-200NBC [MICROSEMI]

DDR DRAM, 64MX16, 0.8ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60;

W3E64M16S-200NBC


型号：	W3E64M16S-200NBC
厂家：	MICROSEMI CORPORATION
描述：	DDR DRAM, 64MX16, 0.8ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 动态存储器双倍数据速率内存集成电路
文件：	总17页 (文件大小：493K)
下载：	下载PDF数据表文档文件

W3E64M16S-333NBC

DDR DRAM, 64MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60

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1 MICROSEMI

W3E64M72S-200BC

64Mx72 DDR SDRAM

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10 WEDC

W3E64M72S-200BC

Synchronous DRAM, 64MX72, 0.8ns, CMOS, PBGA219, 25 X 32 MM, PLASTIC, BGA-219

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0 WEDC

W3E64M72S-200BI

64Mx72 DDR SDRAM

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9 WEDC

W3E64M72S-200BI

Synchronous DRAM, 64MX72, 0.8ns, CMOS, PBGA219, 25 X 32 MM, PLASTIC, BGA-219

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0 WEDC

W3E64M72S-200BM

64Mx72 DDR SDRAM

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8 WEDC

W3E64M72S-200BM

暂无描述

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0 WEDC

W3E64M72S-200ESC

64Mx72 DDR SDRAM

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15 WEDC

W3E64M72S-200ESI

64Mx72 DDR SDRAM

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4 WEDC

W3E64M72S-200ESM

64Mx72 DDR SDRAM

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8 WEDC

W3E64M72S-200SBI

DDR DRAM, 64MX72, 0.8ns, CMOS, PBGA219, 25 X 32 MM, PLASTIC, BGA-219

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0 MICROSEMI

W3E64M72S-200SBI

DDR DRAM, 64MX72, 0.8ns, CMOS, PBGA219, 25 X 32 MM, PLASTIC, BGA-219

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4 MERCURY

W3E64M72S-250BC

64Mx72 DDR SDRAM

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6 WEDC

W3E64M72S-250BC

Synchronous DRAM, 64MX72, 0.8ns, CMOS, PBGA219, 25 X 32 MM, PLASTIC, BGA-219

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-

0 WEDC

W3E64M72S-250BI

64Mx72 DDR SDRAM

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10 WEDC

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