WED3DG6418V75D1I [MICROSEMI]
Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144;
| 型号： | WED3DG6418V75D1I |
| 厂家： | 
Microsemi |
| 描述： | Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144 动态存储器 |
| 文件： | 总5页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WED3DG6418V-D1
White Electronic Designs
ADVANCED*
128MB- 16Mx64 SDRAM UNBUFFERED
FEATURES
DESCRIPTION
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PC100 and PC133 compatible
The WED3DG6418V is a 16Mx64 synchronous
DRAM module which consists of eight 16Mx8 SDRAM
components in TSOP II package, and one 2Kb EEPROM
in an 8 pin TSSOP package for Serial Presence Detect
which are mounted on a 144 pin SO-DIMM multilayer
FR4 Substrate.
Burst Mode Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the positive
edge of the system clock
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
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Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
3.3V ± 0.3V Power Supply
144 pin SO-DIMM JEDEC
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PIN NAMES
PINOUT
A0 – A11
BA0-1
Address Input (Multiplexed)
Select Bank
PIN FRONT PIN
BACK
VSS
PIN FRONT PIN
BACK
DQ46
DQ47
VSS
PIN
95
BACK
DQ21
DQ22
DQ23
VCC
PIN
96
BACK
DQ53
DQ54
DQ55
VCC
1
VSS
DQ0
DQ1
DQ2
DQ3
VCC
2
51
53
55
57
59
DQ14
DQ15
VSS
52
54
56
58
60
DQ0-63
Data Input/Output
3
4
DQ32
DQ33
DQ34
DQ35
VCC
97
98
CLK0, CK1 Clock Input
5
6
99
100
102
104
106
108
110
7
8
NC
NC
101
103
105
107
109
CKE0
CS0#
RAS#
CAS#
WE#
DQM0-7
VCC
Clock Enable Input
9
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
NC
NC
A6
A7
Chip Select Input
Row Address Strobe
Column Address Strobe
Write Enable
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
A8
BA0
DQ4
DQ5
DQ6
DQ7
VSS
DQ36
DQ37
DQ38
DQ39
VSS
VSS
VSS
VOLTAGE KEY
A9
BA1
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
CLK0
VCC
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
CKE0
VCC
111 A10/AP 112
A11
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
VCC
DQM2
DQM3
VSS
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
VCC
DQM
RAS#
WE#
CS0#
NC
CAS#
NC
DQM6
DQM7
VSS
Power Supply (3.3V)
Ground
DQM0
DQM1
VCC
DQM4
DQM5
VCC
VSS
NC
SDA
Serial Data I/O
Serial Clock
NC
DQ24
DQ25
DQ26
DQ27
VCC
DQ56
DQ57
DQ58
DQ59
VCC
A0
A3
DNU
VSS
CK1
VSS
SCL
A1
A4
DNU
NC
Do Not Use
A2
A5
NC
NC
No Connect
VSS
VSS
NC
NC
** These pins should be NC in the system which
does not support SPD.
DQ8
DQ9
DQ10
DQ11
VCC
DQ40
DQ41
DQ42
DQ43
VCC
VCC
VCC
DQ28
DQ29
DQ30
DQ31
VSS
DQ60
DQ61
DQ62
DQ63
VSS
DQ16
DQ17
DQ18
DQ19
VSS
DQ48
DQ49
DQ50
DQ51
VSS
DQ12
DQ13
DQ44
DQ45
**SDA
VCC
**SCL
VCC
DQ20
DQ52
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June 2003
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 3
WED3DG6418V-D1
White Electronic Designs
ADVANCED
FUNCTIONAL BLOCK DIAGRAM
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White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June 2003
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 3
WED3DG6418V-D1
White Electronic Designs
ADVANCED
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN, VOUT
VCC, VCCQ
TSTG
Value
Units
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
-1.0 ~ 4.6
-1.0 ~ 4.6
V
V
-55 ~ +150
°C
W
Power Dissipation
PD
8
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, TA ≤ 0°C ≤ +70°C)
Parameter
Symbol
VCC
VIH
Min
3.0
2.0
-0.3
2.4
—
Typ
3.3
3.0
—
Max
3.6
Unit
V
Note
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
VCCQ+0.3
0.8
V
1
VIL
V
2
VOH
VOL
ILI
—
—
V
IOH= -2mA
IOL= -2mA
3
—
0.4
V
-10
—
10
µA
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VCCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(TA = 23°C, f = 1MHz, VCC = 3.3V, VREF=1.4V ± 200mV)
Parameter
Symbol
CIN1
Max
45
45
25
21
25
12
45
12
Unit
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
pF
pF
pF
pF
pF
pF
pF
pF
CIN2
CIN3
Input Capacitance (CLK0, CK1)
Input Capacitance (CS0#)
CIN4
CIN5
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
Data Input/Output Capacitance (DQ0-DQ63)
CIN6
CIN7
CouT
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June 2003
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 3
WED3DG6418V-D1
White Electronic Designs
ADVANCED
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C ≤ +70°C)
Version
Parameter
Symbol
ICC1
Conditions
133
100
Units
Note
Operating Current
(One bank active)
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
800
mA
1
960
Precharge Standby Current
in Power Down Mode
ICC2P
ICC2PS
ICC2N
CKE ≤ VIL(max), tCC = 10ns
20
20
mA
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20
160
80
Precharge Standby Current
in Non-Power Down Mode
mA
mA
ICC2NS
CKE ≥ VIH(min), CLK ≤VIL(max), tCC = ∞
Input signals are stable
Active Standby Current in
Power-Down Mode
ICC3P
ICC3PS
ICC3N
CKE ≥ VIL(max), tCC = 10ns
50
50
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
mA
mA
240
200
Active Standby Current in
Non-Power Down Mode
ICC3NS
ICC4
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
Io = mA
Operating Current (Burst mode)
Page burst
4 Banks activated
tCCD = 2CLK
1040
1760
880
mA
1
2
Refresh Current
ICC5
ICC6
tRC ≥ tRC(min)
CKE ≤ 0.2V
1520
mA
mA
Self Refresh Current
20
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VSSQ
)
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June 2003
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 3
WED3DG6418V-D1
White Electronic Designs
ADVANCED
Ordering Information
WED3DG6418V10D1
WED3DG6418V7D1
WED3DG6418V75D1
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Note: For industrial temperature range product, add an "I" to the end of the part number.
PACKAGE DIMENSIONS
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ALL DIMENSIONS ARE IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June 2003
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 3
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