WED3DG7266V7D1-SG [MICROSEMI]
64MX72 SYNCHRONOUS DRAM MODULE, ZMA144, ROHS COMPLIANT, SODIMM-144;
| 型号： | WED3DG7266V7D1-SG |
| 厂家： | 
Microsemi |
| 描述： | 64MX72 SYNCHRONOUS DRAM MODULE, ZMA144, ROHS COMPLIANT, SODIMM-144 动态存储器 |
| 文件： | 总7页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WED3DG7266V-D1
White Electronic Designs
PRELIMINARY*
512MB – 64Mx72 SDRAM, UNBUFFERED, w/PLL
FEATURES
DESCRIPTION
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PC100 and PC133
The WED3DG7266V is a 64Mx72 synchronous DRAM
module which consists of nine 64Mx8 SDRAM components
in TSOP II package, and one 2Kb EEPROM in an 8
pin TSOP package for Serial Presence Detect which
are mounted on a 144 pin SO-DIMM multilayer FR4
Substrate.
Burst Mode Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the
positive edge of the system clock
NOTE: Consult factory for availability of:
• RoHS compliant products
ꢀ
Programmable Burst Lengths: 1, 2, 4, 8 or Full
Page
• Vendor source control options
• Industrial temperature option
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ꢀ
ꢀ
Single Rank
3.3V 0.3V Power Supply
144 Pin SO-DIMM JEDEC
•
D1: 31.75 (1.25") TYP
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PIN NAMES
Address Input (Multiplexed)
Select Bank
A0 – A12
BA0-1
DQ0-63
PINOUT
PIN FRONT PIN
BACK
VSS
PIN FRONT PIN
BACK
DQ45
DQ46
DQ47
VSS
CB4
CB5
CKE0
VCC
CAS#
PIN FRONT PIN
BACK
DQ54
DQ55
VCC
A7
BA0
VSS
BA1
A11
VCC
Data Input/Output
CLK0, CLK1 Clock Input
1
3
5
7
9
11
13
15
17
19
21
VSS
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
VSS
2
4
6
8
10
12
14
16
18
20
22
49
51
53
55
57
59
61
63
65
67
69
DQ13
DQ14
DQ15
VSS
CB0
CB1
50
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
97
99
DQ22
DQ23
VCC
A6
A8
VSS
A9
98
DQ32
DQ33
DQ34
DQ35
VCC
DQ36
DQ37
DQ38
DQ39
VSS
100
102
104
106
108
110
112
114
CB0-7
CKE0
CS0#
RAS#
CAS#
WE#
DQM0-7
VCC
VSS
SDA
SCL
DNU
NC
Check Bit (Data-In/Data-Out)
101
103
105
107
109
111
113
Clock Enable Input
Chip Select Input
Row Address Strobe
Column Address Strobe
#Write Enable
DQM
Power Supply (3.3V)
Ground
Serial Data I/O
Serial Clock
CLK0
VCC
A10
VCC
RAS#
WE#
SO#
S1#*
NC
CKE1* 115 DQMB2 116 DQMB6
A12*
NC
CLK1
VSS
CB6
117 DQMB3 118 DQMB7
23 DQMB0 24 DQMB4 71
25 DQMB1 26 DQMB5 73
119
121
123
125
127
129
131
133
135
137
139
141
143
VSS
DQ24
DQ25
DQ26
DQ27
VCC
DQ28
DQ29
DQ30
DQ31
VSS
120
122
124
126
128
130
132
134
136
138
140
142
144
VSS
DQ56
DQ57
DQ58
DQ59
VCC
DQ60
DQ61
DQ62
DQ63
VSS
Do Not Use
No Connect
27
29
31
33
35
37
39
41
43
45
47
VCC
A0
28
30
32
34
36
38
40
42
44
46
48
VCC
A3
A4
A5
VSS
DQ40
DQ41
DQ42
DQ43
VCC
75
77
79
81
83
85
87
89
91
93
95
VSS
CB2
CB3
VCC
DQ16
DQ17
DQ18
DQ19
VSS
* These pins are not used in this module
** These pins should be NC in the system which does
not support SPD.
A1
A2
CB7
VCC
VSS
DQ48
DQ49
DQ50
DQ51
VSS
DQ8
DQ9
DQ10
DQ11
VCC
DQ20
DQ21
DQ52
DQ53
SDA
VCC
SCL
VCC
DQ12
DQ44
Febuary 2006
Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3DG7266V-D1
White Electronic Designs
PRELIMINARY
FUNCTIONAL BLOCK DIAGRAM
WE#
DQMB0
S0#
DQMB4
DQM
S0#
S0#
S0#
WE#
WE#
WE#
DQM
S0#
WE#
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
I/O 6
I/O 7
I/O 6
I/O 7
DQMB1
DQMB5
S0#
WE#
DQM
DQM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
I/O 7
I/O 7
DQMB6
S0#
WE#
DQM
DQM
I/O 0
I/O 1
I/O 2
I/O 0
I/O 1
I/O 2
CB0
CB1
CB2
DQ48
DQ49
DQ50
I/O 3
I/O 4
I/O 5
I/O 3
I/O 4
I/O 5
CB3
CB4
CB5
DQ51
DQ52
DQ53
CB6
CB7
DQ54
DQ55
I/O 6
I/O 7
I/O 6
I/O 7
DQMB2
DQMB7
DQM
S0#
WE#
DQM
S0#
WE#
DQ16
DQ17
DQ18
I/O 0
I/O 1
I/O 2
I/O 0
I/O 1
I/O 2
DQ56
DQ57
DQ58
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQ19
DQ20
DQ21
DQ22
DQ23
DQ59
DQ60
DQ61
DQ62
DQ63
DQMB3
S0#
WE#
DQM
I/O 0
I/O 1
I/O 2
DQ24
DQ25
DQ26
CLK0
PLL
SDRAMs
I/O 3
I/O 4
I/O 5
I/O 6
DQ27
DQ28
DQ29
DQ30
DQ31
*CLOCK WIRING
CLOCK
SDRAMS
INPUT
*CLK0
*CLK1
I/O 7
4 OR 5 SDRAMS
4 OR 5 SDRAMS
NOTE: DQ wiring may differ than described in this
drawing however, DQ/DQMB/CKE/S relationships
must be maintained as shown.
RAS#
CAS#
CKE0
BA0-BA1
A0-A12
RAS#:SDRAM
CAS#:SDRAM
CKE: SDRAM
BA0-BA1: SDRAM
A0-A12: SDRAM
SERIAL PD
SCL
SDA
VCC
VSS
SDRAM
SDRAM
A1
A2
A0
Febuary 2006
Rev. 2
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3DG7266V-D1
White Electronic Designs
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
V
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
VIN, VOUT
VCC, VCCQ
TSTG
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
9
V
°C
W
Power Dissipation
PD
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if “ABSOLUTE MAXIMUM RATINGS” are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: VSS = 0V, 0°C ≤ TA ≤ +70°C
Parameter
Symbol
VCC
VIH
Min
3.0
2.0
-0.3
2.4
—
Typ
3.3
3.0
—
Max
3.6
Unit
V
Note
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
VCCQ +0.3
0.8
V
1
2
VIL
V
VOH
VOL
ILI
—
—
V
IOH= -2mA
IOL= -2mA
3
—
0.4
V
-10
—
10
µA
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VCCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 3.3V, VREF = 1.4V 200mV
Parameter
Symbol
CIN1
Max
40
40
40
6
Unit
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
pF
pF
pF
pF
pF
pF
pF
pF
pF
CIN2
CIN3
Input Capacitance (CK0)
CIN4
Input Capacitance (CS0#)
CIN5
40
7
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
Data Input/Output Capacitance (DQ0-DQ63)
Data Input/Output Capacitance (CB0-7)
CIN6
CIN7
40
9
COUT
COUT1
9
Febuary 2006
Rev. 2
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3DG7266V-D1
White Electronic Designs
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C ≤ +70°C)
Version
Parameter
Symbol
ICC1
Conditions
133/100
Units
Note
Operating Current
(One bank active)
Burst Length = 1
RC ≥ tRC (min)
IOL = 0mA
mA
1
1,925
t
Precharge Standby Current
in Power Down Mode
ICC2P
ICC2PS
Icc2N
CKE ≤ VIL(max), tCC = 10ns
64
64
mA
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20
395
215
Precharge Standby Current
in Non-Power Down Mode
mA
mA
Icc2NS
CKE ≥ VIH(min), CLK ≥VIL(max), tCC = ∞
Input signals are stable
Active Standby Current in
Power-Down Mode
ICC3P
ICC3PS
ICC3N
CKE ≥ VIL(max), tCC = 10ns
100
100
575
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns Input
signals are changed one time during 20ns
mA
mA
Active Standby Current in
Non-Power Down Mode
ICC3NS
ICC4
CKE ≤ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
420
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
Operating Current (Burst mode)
1,925
mA
1
2
Refresh Current
ICC5
ICC6
t
RC ≥ tRC(min)
3,095
180
mA
mA
Self Refresh Current
CKE ≤ 0.2V
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
Febuary 2006
Rev. 2
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3DG7266V-D1
White Electronic Designs
PRELIMINARY
ORDERING INFORMATION FOR D1
Industrial Temperature
CAS
CAS
Ordering Information
Speed
Height
Ordering Information
Speed
Height
Latency
CL=2
Latency
CL=2
WED3DG7266V10D1xx
WED3DG7266V7D1xx
WED3DG7266V75D1xx
100MHz
133MHz
133MHz
31.75 (1.250") TYP
31.75 (1.250") TYP
31.75 (1.250") TYP
WED3DG7266V10D1I-xx
WED3DG7266V7D1I-xx
WED3DG7266V75D1I-xx
100MHz
133MHz
133MHz
31.75 (1.250") TYP
31.75 (1.250") TYP
31.75 (1.250") TYP
CL=2
CL=2
CL=3
CL=3
Notes:
• Consult Factory for availability of RoHS products. (G = RoHS Compliant)
• Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to be
replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others)
• Consult factory for availability of industrial temperature (-40°C to 85°C) option
PACKAGE DIMENSIONS FOR D1
67.72
(2.661 Max)
3.81
2.01 (0.079 Min)
(0.150)
MAX.
31.75
(1.250)
Max
3.99
(0.157)
19.99
(0.787)
9.91
(0.039)
0.004)
32.79
(1.291)
(
23.14
(0.913)
4.60 (0.181)
28.2
(1.112)
1.50 (0.059)
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).
Febuary 2006
Rev. 2
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3DG7266V-D1
White Electronic Designs
PRELIMINARY
PART NUMBERING GUIDE
WED 3 D G 7266 V xx D1 I- x G
WEDC
MEMORY
SDRAM
GOLD
DEPTH & BUS WIDTH
3.3 VOLTS
CLOCK SPEED (MHz)
10 = 100MHz @ CL = 2
7 = 133MHz @ CL = 2
75 = 133MHz @ CL = 3
PACKAGE 144 PIN SO-DIMM
INDUSTRIAL TEMP
COMPONENT VENDOR NAME
(M = Micron)
(S = Samsung)
G = ROHS COMPLIANT
Febuary 2006
Rev. 2
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3DG7266V-D1
White Electronic Designs
PRELIMINARY
Document Title
512MB - 64Mx72 SDRAM UNBUFFERED, w/PLL
Revision History
Rev #
History
Release Date Status
Rev A
Created
3-02
Advanced
Rev 0
0.1 Added PLL spec
6-04
Preliminary
0.2 Updated CAP and IDD specs
0.3 Moved status from advanced to preliminary
0.4 Removed “ED” from part number
0.5 Moved from Advanced to preliminary
Rev 1
Rev 2
1.1 Added “ED” to part number
7-05
2-06
Preliminary
Preliminary
2.1 Added RoHS, vendor source and industrial option notes
2.2 Added part number guide
Febuary 2006
Rev. 2
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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