AS8S512K32P-35/IT [MICROSS]
SRAM Module, 512KX32, 35ns, CMOS, CPGA66, PGA-66;
| 型号： | AS8S512K32P-35/IT |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | SRAM Module, 512KX32, 35ns, CMOS, CPGA66, PGA-66 静态存储器 内存集成电路 |
| 文件： | 总17页 (文件大小：1201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRAM
AS8S512K32
& AS8S512K32A
OPTIONS
512K x 32 SRAM
Operating Temp. Ranges
Markings
SRAM MEMORY ARRAY
FullꢀMilitaryꢀ(-55oC to +125oC) Qꢀ&ꢀ883
Militaryꢀ(-55oC to +125oC)ꢀ
Industrialꢀ(-40oC to +85oC)
XT
IT
AVAILABLE AS MILITARY SPECIFICATIONS
•ꢀ SMDꢀ5962-94611ꢀ&ꢀ5962-95624ꢀ(MilitaryꢀPinout)
•ꢀ MIL-STD-883
Timing
12ns
15ns
17ns
20ns
Markings
-12
-15
-17
-20
Timing
25ns
35ns
45ns
55ns
Markings
-25
-35
-45
-55
FEATURES
•ꢀ Operation with single 5V
supply
•ꢀ Built in decoupling caps for
low noise
•ꢀ VastlyꢀimprovedꢀIccꢀSpecs
•ꢀ High speed: 12, 15, 17, 20, 25,
35,ꢀ45ꢀ&ꢀ55ns
•ꢀ Organized as 512Kx32 , byte
selectable
•ꢀ TTLꢀCompatibleꢀInputsꢀandꢀ
Outputs
Package
Ceramic Quad Flatpack
PinꢀGridꢀArray
Markings
Q,ꢀQ1,ꢀQ2,ꢀBQFP
P
•ꢀ LowꢀpowerꢀCMOS
GENERAL DESCRIPTION
Low Power Data
Retention Mode
L
The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS
SRAM Modules organized as 512Kx32 bits. These devices achieve
high speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
Pinout
Military
Commercial
Markings
(noꢀindicator)
A*
This military temperature grade product is ideally suited for
military applications.
*(available with Q package only)
PIN ASSIGNMENT
(Top View)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
60
59
58
57
ꢀI/Oꢀ16
I/Oꢀ14
I/Oꢀ0
I/Oꢀ1
I/O17
I/O18
I/O19
Vss
I/O20
I/O21
I/O22
I/O23
Vcc
I/O24
I/O25
I/O26
I/O27
Vss
I/O28
I/O29
I/O30
I/Oꢀ17
I/Oꢀ18
I/Oꢀ19
I/Oꢀ20
I/Oꢀ21
I/Oꢀ22
I/Oꢀ23
GND
I/Oꢀ13
I/Oꢀ12
I/Oꢀ2
Vss
I/Oꢀ3
56
I/Oꢀ11
I/Oꢀ4
68 Lead CQFP
55
54
53
52
51
50
49
48
47
46
45
44
I/Oꢀ10
I/Oꢀ9
I/Oꢀ8
Vcc
I/O 5
68 Lead CQFP
(Q, Q1, Q2)
Military SMD
Pinout Option
I/O 6
Commercial
Pinout Option
(Q with
I/O 7
GND
I/O 8
I/Oꢀ24
I/Oꢀ25
I/Oꢀ26
I/Oꢀ27
I/Oꢀ28
I/Oꢀ29
I/Oꢀ30
I/Oꢀ31
I/Oꢀ7
I/Oꢀ6
I/Oꢀ5
I/Oꢀ4
Vss
I/Oꢀ3
I/Oꢀ2
I/Oꢀ1
I/Oꢀ9
I/O 10
I/O 11
I/Oꢀ12
I/O 13
I/Oꢀ14
I/O 15
Pinout A)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
ꢀI/Oꢀ16
I/Oꢀ17
I/Oꢀ18
I/Oꢀ19
I/Oꢀ20
I/Oꢀ21
I/Oꢀ22
I/Oꢀ23
GND
I/Oꢀ24
I/Oꢀ25
I/Oꢀ26
I/Oꢀ27
I/Oꢀ28
I/Oꢀ29
I/Oꢀ30
I/Oꢀ31
I/Oꢀ0
I/Oꢀ1
I/Oꢀ2
68 Lead
CQFP
(BQFP)
I/Oꢀ3
I/Oꢀ4
I/O 5
66 Lead
PGA (P)
Military SMD
Pinout
I/O 6
I/O 7
GND
I/O 8
Military SMD
Pinout Option
I/Oꢀ9
I/O 10
I/O 11
I/Oꢀ12
I/O 13
I/Oꢀ14
I/O 15
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
1
SRAM
AS8S512K32
& AS8S512K32A
CS
CS
CS
CS
CS4\
M3
CS3\
I/O 24 - I/O 31
M2
CS2\
I/O 16 - I/O 23
M1
I/O 8 - I/O 15
I/O 0 - I/O 7
CS1\
WE\
OE\
M0
A0 - A18
COMMERCIAL PINOUT/BLOCK DIAGRAM
MILITARY PINOUT/BLOCK DIAGRAM
CS
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
2
SRAM
AS8S512K32
& AS8S512K32A
This is a stress rating only and functional operation on the
device at these or any other conditions above those indicated
inꢀtheꢀoperationalꢀsectionsꢀofꢀthisꢀspecificationꢀisꢀnotꢀimplied.ꢀ
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
**Junction temperature depends upon package type, cycle
time,ꢀloading,ꢀambientꢀtemperatureꢀandꢀairflow.ꢀꢀSeeꢀtheꢀAp-
plicationꢀInformationꢀsectionꢀatꢀtheꢀendꢀofꢀthisꢀdatasheetꢀforꢀ
more information.
ABSOLUTE MAXIMUM RATINGS*
VoltageꢀofꢀVccꢀSupplyꢀRelativeꢀtoꢀVss.................-.5Vꢀtoꢀ+7V
StorageꢀTemperature.....................................-65°Cꢀtoꢀ+150°C
ShortꢀCircuitꢀOutputꢀCurrent(perꢀI/O)............................20mA
VoltageꢀonꢀAnyꢀPinꢀRelativeꢀtoꢀVss................-.5VꢀtoꢀVcc+1V
MaximumꢀJunctionꢀTemperature**.............................+150°C
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < T < 125oC and -40oC to +85oC; Vcc = 5V +10%)
A
DESCRIPTION
CONDITIONS SYMBOL MIN
MAX UNITS NOTES
VIH
VIL
ILI1
ILI2
VCC+.5
Input High (logic 1) Voltage
Input Low (logic 1) Voltage
Input Leakage Current ADD,OE
Input Leakage Current WE, CE
2.2
-0.5
-10
-10
V
1
0.8
V
µA
µA
1,2
10
0V<VIN<VCC
10
Output(s) Disabled
0V<VOUT<VCC
Output Leakage Current I/O
ILO
-10
2.4
10
µA
I
OH = 4.0mA
VOH
VOL
VCC
Output High Voltage
Output Low Voltage
Supply Voltage
V
V
V
1
1
1
I
OL = 8.0mA
0.4
5.5
4.5
MAX
DESCRIPTION
CONDITIONS
SYMBOL -12 -15 -17 -20 -25 -35 -45 -55 UNITS NOTES
CS\<VIL; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open
Power Supply
Current: Operating
Icc
250 200 175 150 140 130 120 110 mA
3,13
CS\>VIH; VCC = MAX
f = MAX = 1/ tRC (MIN)
Outputs Open
Power Supply
Current: Standby
ISBT1
40
40
40 35
35
20
30
30
30
20
mA
3, 13
VIN = VCC - 0.2V, or
VSS +0.2V
ISBT2
CMOS Standby
20
20 20 20
20 20
mA
VCC=Max; f = 0Hz
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
3
SRAM
AS8S512K32
& AS8S512K32A
CAPACITANCE (VIN = 0V, f = 1MHz, T = 25oC)1
A
SYMBOL
PARAMETER
MAX
UNITS
CADD
COE
A0 - A18 Capacitance
50
pF
OE\ Capacitance
50
20
20
50
pF
pF
pF
pF
CWE, CCS
WE\ and CS\ Capacitance
I/O 0- I/O 31 Capacitance
WE\ Capacitance
CIO
CWE ("A" version)
NOTE:
1. This parameter is sampled.
AC TEST CONDITIONS
Test Specifications
I
OL
Inputꢀpulseꢀlevels.........................................VSS to 3V
Inputꢀriseꢀandꢀfallꢀtimes.........................................5ns
Inputꢀtimingꢀreferenceꢀlevels...............................1.5V
Output reference levels........................................1.5V
Output load..............................................See Figure 1
Current Source
Device
-
+
Vz = 1.5V
(Bipolar
Supply)
Under
Test
+
Ceff = 50pf
I
Current Source
OH
Figure 1
NOTES:
Figure 1
Vzꢀisꢀprogrammableꢀfromꢀ-2Vꢀtoꢀ+ꢀ7V.
IOLꢀandꢀIOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOLꢀandꢀIOH are adjusted to simulate a typical resistive load
circuit.
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
4
SRAM
AS8S512K32
& AS8S512K32A
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTE 5) (-55oC<T < 125oC and -40oC to +85oC; VCC = 5V +10%)
A
-12
-15
-17
-20
-25
-35
-45
-55
DESCRIPTION
READ CYCLE
SYMBOL
UNITS NOTES
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
tRC
tAA
tACS
tOH
tLZCS
tHZCS
tAOE
tLZOE
tHZOE
12
15
READ cycle time
17
20
25
35
45
55
ns
ns
ns
ns
12
12
15
15
Address access time
17
17
20
20
25
25
35
35
45
45
55
55
Chip select access time
Output hold from address change
Chip select to output in Low-Z
Chip select to output in High-Z
Output enable access time
Output enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
ns
ns
ns
ns
ns
4,6,7
4,6,7
7
7
8
8
9
9
10
10
12
12
15
15
20
20
20
20
0
0
0
0
0
0
0
0
4,6
4,6
7
9
12
12
12
15
20
20
tWC
tCW
WRITE cycle time
12
10
10
2
15
12
12
2
17
15
15
2
20
15
15
2
25
17
17
2
35
20
20
2
45
25
25
2
55
25
25
2
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip select to end of write
Address valid to end of write
Address setup time
tAW
tAS
tAH
Address hold from end of write
WRITE pulse width
1
1
1
1
1
1
1
1
tWP1
tWP2
tDS
10
10
8
12
12
10
0
15
15
12
0
15
15
10
0
17
17
12
0
20
20
15
0
25
25
20
0
25
25
20
0
WRITE pulse width
Data setup time
tDH
tLZWE
tHZWE
Data hold time
0
Write disable to output in Low-z
Write enable to output in High-Z
2
2
2
2
2
2
2
2
4,6,7
4,6,7
7
8
9
11
13
15
15
15
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
5
SRAM
AS8S512K32
& AS8S512K32A
READ CYCLE NO. 1
t
RC
ADDRESS
DATAꢀI/O
t
AA
t
OH
PREVIOUSꢀDATAꢀVALID
DATAꢀVALID
READ CYCLE NO. 2
t
RC
ADDRESS
t
AA
CS\
t
ACS
t
t
HZCS
LZCS
OE\
t
t
HZOE
AOE
t
LZOE
DATAꢀVALID
DATAꢀI/O
HIGHꢀIMPEDANCE
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
6
SRAM
AS8S512K32
& AS8S512K32A
WRITE CYCLE NO. 1
(Chip Select Controlled)
t
WC
ADDRESS
t
t
AW
t
AH
CW
CS\
t
t
AS
WP11
WE\
t
LZWE
t
t
t
HZWE
DS
DATAꢀVALID
DH
DATAꢀI/O
WRITE CYCLE NO. 2
(Write Enable Controlled)
t
WC
ADDRESS
t
AW
t
t
t
AS
AH
CW
CS\
t
WP21
WE\
t
t
DH
DS
DATAꢀVALID
DATAꢀI/O
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
7
SRAM
AS8S512K32
& AS8S512K32A
NOTES
1. All voltages referenced to VSSꢀ(GND).
2.ꢀꢀ-2Vꢀforꢀpulseꢀwidthꢀ<20ns.
tHZCS, is less than tLZCS, and tHZWE is less than tLZWE
.
8.ꢀꢀWE\ꢀisꢀHIGHꢀforꢀREADꢀcycle.
3.ꢀꢀICC is dependent on output loading and cycle rates.
9.ꢀꢀDeviceꢀisꢀcontinuouslyꢀselected.ꢀꢀChipꢀselectsꢀandꢀoutputꢀ
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
ꢀꢀꢀꢀꢀTheꢀspecifiedꢀvalueꢀappliesꢀwithꢀtheꢀoutputs
1
HZ.
unloaded, and f=
t
RC(MIN)
11. tRC=ꢀREADꢀcycleꢀtime.
12.ꢀꢀChipꢀenableꢀ(CS\)ꢀandꢀwriteꢀenableꢀ(WE\)ꢀcanꢀinitiateꢀ
andꢀterminateꢀaꢀWRITEꢀcycle.
4.ꢀꢀThisꢀparameterꢀguaranteedꢀbutꢀnotꢀtested.
5.ꢀꢀTestꢀconditionsꢀasꢀspecifiedꢀwithꢀoutputꢀloadingꢀas
shown in Fig. 1 unless otherwise noted.
6. tHZCS, tHZOE and tHZWEꢀareꢀspecifiedꢀwithꢀCL= 5pF as in Fig. 2.
Transitionꢀisꢀmeasuredꢀ+/-ꢀ200ꢀmVꢀtypicalꢀfromꢀsteadyꢀstateꢀ
voltage, allowing for actual tester RC time constant.
7. At any given temperature and voltage condition,
13.ꢀꢀICC is for 32 bit mode.
LOW POWER CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
VCC for Retention Data
VDR
2
V
All Inputs @ Vcc + 0.2V
or Vss + 0.2V,
VCC = 2V
CC = 3V
ICCDR
ICCDR
10
12
mA
mA
Data Retention Current
V
CS\ = Vcc + 0.2V
Chip Deselect to Data
Retention Time
0
ns
ns
4
t
CDR
Operation Recovery Time
4, 11
t
t
RC
R
LOW VCC DATA RETENTION WAVEFORM
DATAꢀRETENTIONꢀMODE
VCC
4.5V
4.5V
VDR>2V
tCDR
tR
VDR
CS\ꢀ1-4
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
8
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Case #702 (Package Designator Q)
SMD 5962-94611, Case Outline M
4ꢀxꢀD2
DETAILꢀA
4ꢀxꢀD1
D
R
1oꢀ-ꢀ7o
B
b
e
L1
SEEꢀDETAILꢀA
A1
A
A2
E
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.200
0.186
0.020
A
A1
A2
B
b
D
0.123
0.118
0.000
0.010 REF
0.800 BSC
0.013
0.017
D1
D2
E
0.870
0.980
0.936
0.890
1.000
0.956
e
0.050 BSC
R
L1
0.005
0.035
---
0.045
*All measurements are in inches.
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
9
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Package Designator Q2
D2
D1
D
1
b
e
PACKAGE SPECIFICATION
Symbol
Min
Max
.200
.080
.017
A
A
A1
B
b
.070
.013
R
.010 REF
D
D1
D2
e
R
L1
.800 BSC
.870
.890
.980
1.00
.050 BSC
.010 TYP
.035
L1
.045
A1
B
Dimensions are in inches.
*All measurements are in inches.
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
10
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Case #904 (Package Designator P )
SMD 5962-94611, Case Outline T
4ꢀxꢀD
A
D1
D2
A1
Pinꢀ56
ꢀꢀPinꢀ1
(identified by
0.060 square pad)
φb1
E1
e
φb
Pinꢀ66
Pinꢀ11
e
L
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.181
0.035
0.020
0.055
1.085
A
A1
φb
φb1
D
0.144
0.025
0.016
0.045
1.065
D1/E1
D2
e
1.000 TYP
0.600 TYP
0.100 TYP
L
0.145
0.155
*All measurements are in inches.
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
11
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Case (Package Designator Q1)
SMD 5962-94611, Case Outline A
SMD SPECIFICATIONS
SYMBOL
MIN
---
0.054
0.013
MAX
0.200
---
A
A1
b
0.017
0.010 TYP
B
c
0.009
0.980
0.870
0.012
1.000
0.890
D/E
D1/E1
D2/E2
e
0.800 BSC
0.050 BSC
L
0.035
0.045
0.010 TYP
R
*All measurements are in inches.
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
12
SRAM
AS8S512K32
& AS8S512K32A
MECHANICAL DEFINITIONS*
Micross Case (Package Designator BQFP)
SMD 5962-95624, Case Outline N
Symbol
Millimeters
Inches
Min
Max
5.10
Min
.115
.055
.045
.012
.009
2.505
1.545
2.805
.045
.795
.190
1.485
.480
.372
Max
.200
.065
.055
.018
.012
2.615
1.575
3.315
.055
.805
.210
1.515
.520
.388
A
A1
A2
b
2.92
1.40
1.65
1.14
1.40
0.30
0.46
C
0.23
0.31
D/E
D1/E1
D2/E2
e
63.63
39.24
71.25
1.14
66.42
40.01
84.20
1.40
e1
j
20.19
4.83
20.45
5.33
k
37.72
12.19
9.45
38.48
13.21
9.86
L
S1
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
13
SRAM
AS8S512K32
& AS8S512K32A
ORDERING INFORMATION
Device Number
Package Type
Speed (ns)
Power Option
L (Low Power)
Blank (Std power)
Process
AS8S512K32
Q, Q1, Q2, P or BQFP
‐12, ‐15, ‐17, ‐20, ‐25, ‐35, ‐45 or ‐55
/*
Examples:
*Available Processes
IT = Industrial Temperature Range
XT = Military Temperature Range
Q & 883C = Full Military Processing
AS8S512K32Q‐15/Q
AS8S512K32P‐17L/Q
‐400C to +850C
‐550C to +1250C
‐550C to +1250C
AS8S512K32P‐25/XT
AS8S512K32Q1‐55/IT
AS8S512K32BQFP‐55/883C
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
14
SRAM
AS8S512K32
& AS8S512K32A
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE
Package Designator Q
Package Designator Q1
Package Designator P
Micross Part#
Micross Part#
Micross Part#
SMD Part#
SMD Part#
SMD Part#
5962‐9461118HMA
5962‐9461118HMC
5962‐9461120HMA
5962‐9461120HMC
5962‐9461117HMA
5962‐9461117HMC
5962‐9461119HMA
5962‐9461119HMC
5962‐9461116HMA
5962‐9461116HMC
5962‐9461110HMA
5962‐9461110HMC
5962‐9461115HMA
5962‐9461115HMC
5962‐9461109HMA
5962‐9461109HMC
5962‐9461114HMA
5962‐9461114HMC
5962‐9461108HMA
5962‐9461108HMC
5962‐9461113HMA
5962‐9461113HMC
5962‐9461107HMA
5962‐9461107HMC
5962‐9461112HMA
5962‐9461112HMC
5962‐9461106HMA
5962‐9461106HMC
5962‐9461111HMA
5962‐9461111HMC
5962‐9461105HMA
5962‐9461105HMC
5962‐9461118HAA
5962‐9461118HAC
5962‐9461120HAA
5962‐9461120HAC
5962‐9461117HAA
5962‐9461117HAC
5962‐9461119HAA
5962‐9461119HAC
5962‐9461116HAA
5962‐9461116HAC
5962‐9461110HAA
5962‐9461110HAC
5962‐9461115HAA
5962‐9461115HAC
5962‐9461109HAA
5962‐9461109HAC
5962‐9461114HAA
5962‐9461114HAC
5962‐9461108HAA
5962‐9461108HAC
5962‐9461113HAA
5962‐9461113HAC
5962‐9461107HAA
5962‐9461107HAC
5962‐9461112HAA
5962‐9461112HAC
5962‐9461106HAA
5962‐9461106HAC
5962‐9461111HAA
5962‐9461111HAC
5962‐9461105HAA
5962‐9461105HAC
5962‐9461118HTA
5962‐9461118HTC
5962‐9461120HTA
5962‐9461120HTC
5962‐9461117HTA
5962‐9461117HTC
5962‐9461119HTA
5962‐9461119HTC
5962‐9461116HTA
5962‐9461116HTC
5962‐9461110HTA
5962‐9461110HTC
5962‐9461115HTA
5962‐9461115HTC
5962‐9461109HTA
5962‐9461109HTC
5962‐9461114HTA
5962‐9461114HTC
5962‐9461108HTA
5962‐9461108HTC
5962‐9461113HTA
5962‐9461113HTC
5962‐9461107HTA
5962‐9461107HTC
5962‐9461112HTA
5962‐9461112HTC
5962‐9461106HTA
5962‐9461106HTC
5962‐9461111HTA
5962‐9461111HTC
5962‐9461105HTA
5962‐9461105HTC
AS8S512K32Q‐12/Q
AS8S512K32Q‐12/Q
AS8S512K32Q‐12L/Q
AS8S512K32Q‐12L/Q
AS8S512K32Q‐15/Q
AS8S512K32Q‐15/Q
AS8S512K32Q‐15L/Q
AS8S512K32Q‐15L/Q
AS8S512K32Q‐17/Q
AS8S512K32Q‐17/Q
AS8S512K32Q‐17L/Q
AS8S512K32Q‐17L/Q
AS8S512K32Q‐20/Q
AS8S512K32Q‐20/Q
AS8S512K32Q‐20L/Q
AS8S512K32Q‐20L/Q
AS8S512K32Q‐25/Q
AS8S512K32Q‐25/Q
AS8S512K32Q‐25L/Q
AS8S512K32Q‐25L/Q
AS8S512K32Q‐35/Q
AS8S512K32Q‐35/Q
AS8S512K32Q‐35L/Q
AS8S512K32Q‐35L/Q
AS8S512K32Q‐45/Q
AS8S512K32Q‐45/Q
AS8S512K32Q‐45L/Q
AS8S512K32Q‐45L/Q
AS8S512K32Q‐55/Q
AS8S512K32Q‐55/Q
AS8S512K32Q‐55L/Q
AS8S512K32Q‐55L/Q
AS8S512K32Q1‐12/883C
AS8S512K32Q1‐12/883C
AS8S512K32Q1‐12L/883
AS8S512K32Q1‐12L/883
AS8S512K32Q1‐15/883C
AS8S512K32Q1‐15/883C
AS8S512K32Q1‐15L/883
AS8S512K32Q1‐15L/883
AS8S512K32Q1‐17/883C
AS8S512K32Q1‐17/883C
AS8S512K32Q1‐17L/883
AS8S512K32Q1‐17L/883
AS8S512K32Q1‐20/883C
AS8S512K32Q1‐20/883C
AS8S512K32Q1‐20L/883
AS8S512K32Q1‐20L/883
AS8S512K32Q1‐25/883C
AS8S512K32Q1‐25/883C
AS8S512K32Q1‐25L/883
AS8S512K32Q1‐25L/883
AS8S512K32Q1‐35/883C
AS8S512K32Q1‐35/883C
AS8S512K32Q1‐35L/883
AS8S512K32Q1‐35L/883
AS8S512K32Q1‐45/883C
AS8S512K32Q1‐45/883C
AS8S512K32Q1‐45L/883
AS8S512K32Q1‐45L/883
AS8S512K32Q1‐55/883C
AS8S512K32Q1‐55/883C
AS8S512K32Q1‐55L/883
AS8S512K32Q1‐55L/883
AS8S512K32P‐12/Q
AS8S512K32P‐12/Q
AS8S512K32P‐12L/Q
AS8S512K32P‐12L/Q
AS8S512K32P‐15/Q
AS8S512K32P‐15/Q
AS8S512K32P‐15L/Q
AS8S512K32P‐15L/Q
AS8S512K32P‐17/Q
AS8S512K32P‐17/Q
AS8S512K32P‐17L/Q
AS8S512K32P‐17L/Q
AS8S512K32P‐20/Q
AS8S512K32P‐20/Q
AS8S512K32P‐20L/Q
AS8S512K32P‐20L/Q
AS8S512K32P‐25/Q
AS8S512K32P‐25/Q
AS8S512K32P‐25L/Q
AS8S512K32P‐25L/Q
AS8S512K32P‐35/Q
AS8S512K32P‐35/Q
AS8S512K32P‐35L/Q
AS8S512K32P‐35L/Q
AS8S512K32P‐45/Q
AS8S512K32P‐45/Q
AS8S512K32P‐45L/Q
AS8S512K32P‐45L/Q
AS8S512K32P‐55/Q
AS8S512K32P‐55/Q
AS8S512K32P‐55L/Q
AS8S512K32P‐55L/Q
Package Designator BQFP
Micross Part#
SMD Part#
5962‐9562409HNC
5962‐9562408HNC
5962‐9562412HNC
5962‐9562407HNC
5962‐9562411HNC
5962‐9562406HNC
5962‐9562410HNC
5962‐9562405HNC
AS8S512K32BQFP‐20/883C
AS8S512K32BQFP‐25/883C
AS8S512K32BQFP‐25/883C
AS8S512K32BQFP‐35/883C
AS8S512K32BQFP‐35/883C
AS8S512K32BQFP‐45/883C
AS8S512K32BQFP‐45/883C
AS8S512K32BQFP‐55/883C
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
15
SRAM
AS8S512K32
& AS8S512K32A
DOCUMENT TITLE
512K x 32 SRAM MEMORY ARRAY
Rev #
History
Release Date
Status
6.5
Updated Features, Temp Range &
General Description - Page 1,
Updated Order Chart - Page 13,
Removed Space Processing - Page 13
April 2010
Release
6.6
6.7
Updated Ordering Table, Page 14
Updated DSCC Cross Reference, Page 15
Added SMD 5962-95624, Page 1
Added BQFP Package, Page 1 and added
BQFP drawing on page 13 (BQFP package
is listed on SMD 5962-95624)
June 2010
Release
Updated Q2 Spec, Page 10
July 2010
Release
Release
6.8
Page 3 Changes:
June 2011
From
To
ꢀ
ꢀ
ꢀ
•ICC (mA)
-17
700
650
600
570
570
550
175
150
140
130
120
110
-20
-25
-35
-45
-55
ꢀ
•ISBT1 (mA)
-12
80
80
40
40
40
35
35
30
30
30
-15
-17
-20
-25
-35
-45
-55
240
240
190
190
150
150
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
•ISBT2(mA)
•2VꢀICCDR(mA) 20
•3VꢀICCDR(mA) 28
80
20
10
12
•Removedꢀnoteꢀfromꢀpageꢀ8ꢀ"-12ꢀ&-15ꢀhaveꢀaꢀ32mAꢀlimit".
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
16
SRAM
AS8S512K32
& AS8S512K32A
Rev #
History
Release Date
Status
6.9
Added 68 Lead CQFP (BQFP)
Military SMD Pinout Option
August 2013
Release
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32 & AS8S512K32A
Rev. 6.9 08/13
17
相关型号：
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