AS8S512K32PECA-15/ET [MICROSS]
Standard SRAM, 512KX32, 15ns, CMOS, PQCC68, LCC-68;
| 型号： | AS8S512K32PECA-15/ET |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Standard SRAM, 512KX32, 15ns, CMOS, PQCC68, LCC-68 静态存储器 内存集成电路 |
| 文件： | 总8页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM
Integrated Plastic Encapsulated Microcircuit
FEATURES
DESCRIPTION
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Integrated Real-Time Memory Array Solution
The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The
device is available with access times of 12, 15, 20 and
25ns creating a zero wait state/latency, real-time memory
solution. The high speed, 5v supply voltage and control
lines,make the device ideal for all your real-time computer
memory requirements.
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No latency or refresh cycles
Parallel Read/Write Interface
User Configurable via multiple enables
Random Access Memory Array
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Fast Access Times: 12, 15, 20, and 25ns
TTL Compatible I/O
Fully Static, No Clocks
The device can be configured as a 512K x 32 and used to
create a single chip external data /program memory array
solution or via use of the individual chip enable lines, be
reconfigured as a 1M x 16 or 2M x 8.
Surface Mount Package
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68 Lead PLCC, No. 99 JEDEC M0-47AE
Small Footprint, 0.990 Sq. In.
Multiple Ground Pins for Maximum Noise Immunity
Single +5V (±5%) Supply Operation
The device provides a 50+% space savings when compared
to four 512K x 8, 36 pin SOJs. In addition theAS8S512K32
has only a 20pF load on the Addr. lines vs. ~30pF for four
plastic SOJs.
PIN CONFIGURATIONS AND BLOCK DIAGRAM (PECA Package)
BYTE CONTROL TABLE
PIN NAMES
A0 - A18
E0\ - E3\
W\
Address Inputs
Chip Enables
Write Enables
Output Enable
Chip
Enable
Byte
Control
DQ0-7
DQ8-15
DQ16-23
DQ24-31
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
DQ17
DQ18
DQ19
Vss
DQ14
DQ13
DQ12
Vss
E0\
G\
E1\
E2\
E3\
DQ0 - DQ31 Common Data Input/Output
Vcc
Vss
NC
Power (+5V ± 10%)
Ground
No Connection
DQ20
DQ21
DQ22
DQ23
Vcc
DQ11
DQ10
DQ09
DQ08
Vcc
A0-A18
G\
DQ24
DQ25
DQ26
DQ27
Vss
DQ07
DQ06
DQ05
DQ04
Vss
19
W\
512K x 32
Memory Array
E0\
DQ0-DQ7
E1\
DQ28
DQ29
DQ30
DQ03
DQ02
DQ01
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
E2\
E3\
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
1
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
RECOMMENDED DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to Vss
Operating Temperature tA (Ambient)
Parameter
Sym
Min
Typ
Max
Units
-0.5V to 7.0V
-40
oC to +85oC
-40oC to +105oC
-55oC to +125oC
-55oC to +125oC
5.0 Watts
VCC
Supply Voltage
4.75
5
5.25
V
VSS
VIH
VIL
Supply Voltage
0
0
0
V
V
V
Industrial
Input High Voltage
Input Low Voltage
2.2
-0.3
---
---
Vcc+0.5V
0.8
Enhanced
Military
Storage Temperature, Plastic
Power Dissipation
Output Current
Junction Temperature, TJ
20 mA
175oC
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Vss to 3.0V
5ns
1.5V
Figure 2
*Stress greater than those listed under "Absolute Maximum Ratings"
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions greater than those in di cated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Note: For tEHQZ, tGHQZ and tWLQZ, CL=5pF
FIG. 2
FIG. 3
Vcc
Vcc
480Ω
480Ω
Q
Q
30pF
5pF
255Ω
255Ω
DC ELECTRICAL CHARACTERISTICS
Max
Units
ns
Parameter
Sym
Conditions
Min
12/15
20/25
ICC1
ICC2
W#=VIL, II/O=0mA, Min Cycle
E#VIH, VINVIL or VINVIH, f=0MHz
E#VCC-0.2V
Operating Power Supply Current
Standby (TTL) Power Supply Current
Full Standby Power Supply Current
CMOS
350
300
mA
120
125
mA
ICC3
20
20
mA
VINVCC-0.2V or VIN0.2V
VIN=0V to VCC
ILI
Input Leakage Current
±5
±5
μA
μA
V
ILO
VI/O=0V to VCC
Output Leakage Current
Ouput High Voltage
VOH
VOL
IOH=-4.0mA
2.4
IOL=8.0mA
Output Low Voltage
0.4
V
TRUTH TABLE
CAPACITANCE
G# E# W#
Mode
Output
Power
(f=1.0MHz, VIN=VCC or VSS)
ICC2
Parameter
Address Lines
Data Lines
Sym
CI
CD/Q
Max
20
7
20
7
Unit
pF
pF
pF
pF
X
H
X
Standby
HIGH Z
ICC3
ICC1
ICC1
ICC1
H
L
L
L
L
H
H
L
Output Deselect HIGH Z
Write & Output Enable Line W#, G#
Chip Enable Line E0#, E3#
DOUT
DIN
Read
Write
X
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
2
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
AC CHARACTERISTICS READ CYCLE
Parameter
Symbol
12ns
Max
15ns
Max
20ns
Max
25ns
Max
Units
JEDEC
Alt.
Min
Min
Min
Min
tAVAV
tAVQV
tELQV
tELQX
tEHQZ
tAVQX
tGLQV
tGLQX
tGHQZ
tRC
Read Cycle Time
12
15
20
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAA
tACS
tCLZ
tCHZ
tOH
Address Access Time
12
12
15
15
20
20
25
25
Chip Enable Access
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z
Output Enable to Output in High Z
3
3
0
3
3
0
3
3
0
3
3
0
6
6
6
7
7
7
9
9
9
9
9
9
tOE
tOLZ
tOHZ
READ CYCLE 1 - W\ HIGH, G\, E\ LOW
tAVAV
A
ADDRESS 1
ADDRESS 2
t
t
AVQX
AVQV
Q
DATA 2
DATA 1
READ CYCLE 2 - W\ HIGH
tAVAV
A
tAVQV
E#
tELQV
tEHQZ
tELQX
G#
Q
t
GLQV
GLQX
t
GHQZ
t
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
3
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
AC CHARACTERISTICS READ CYCLE
Parameter
Symbol
12ns
Max
15ns
Max
20ns
Max
25ns
Max
Units
JEDEC
Alt.
Min
Min
Min
Min
tAVAV
tELWH
tELEH
tAVWL
tAVEL
tWC
Write Cycle Time
12
15
20
25
ns
ns
ns
ns
ns
ns
ns
ns
tCW
tCW
tAS
Chip Enable to End of Write
8
8
0
0
8
8
8
10
0
0
0
0
0
6
6
3
10
10
0
11
11
0
12
12
0
Address Setup Time
Address Valid to End of Write
Write Pulse Width
tAS
0
0
0
tAVWH
tAVEH
tWLWH
tELEH
tWHAZ
tEHAZ
tWHDX
tEHDZ
tWLQZ
tDVWH
tDVEH
tWHQX
tAW
tAW
tWP
tWP
tWR
tWR
tDH
10
10
10
12
0
11
11
11
13
0
12
12
12
14
0
Write Recovery Time
Data Hold Time
ns
ns
0
0
0
0
0
0
tDH
0
0
0
tWHZ
tDW
tDW
tWLZ
Write to Output in High Z
Data to Write Time
6
0
7
0
8
0
9
ns
ns
7
8
9
7
8
9
Output Active from End of Write
3
3
3
WRITE CYCLE 1 - W\ CONTROLLED
tAVAV
A
E\
tELWH
t
WHAX
t
AVWH
tWLWH
W\
tAVWL
t
DVWH
DATA VALID
WHQX
tWHDX
D
t
tWLQZ
HIGH Z
Q
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
4
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
WRITE CYCLE 2 - E\ CONTROLLED
tAVAV
A
tAVEL
tELEH
E\
tAVEH
t
EHAX
EHDX
tWLEH
W\
tDVEH
t
D
Q
DATA VALID
HIGH Z
PACKAGE DRAWING
Package No. 99
68 Lead PLCC
JEDEC MO-47AE
0.995
Max
0.956
Max
0.180
Max
0.995
Max
0.956
Max
0.020
0.015
0.050
BSC
0.040
Max
0.115
Max
0.930
0.890
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
5
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
FAMILY PIN MATRIX
64Mb-SRAM, 2M x 32:
3.3V = AS8SLC2M32PEC
16Mb-SRAM, 512K x 32:
5.0V = AS8S512K32PEC
3.3V = AS8SLC512K32PEC
4Mb-SRAM, 128K x 32:
5.0V = AS8S128K32PEC
10
60
DQ17
DQ18
DQ19
Vss
DQ17
DQ18
DQ19
Vss
DQ17
DQ18
DQ19
Vss
DQ14
DQ13
DQ12
Vss
DQ14
DQ13
DQ12
Vss
DQ14
DQ13
DQ12
Vss
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
DQ20
DQ21
DQ22
DQ23
Vcc
DQ20
DQ21
DQ22
DQ23
Vcc
DQ20
DQ21
DQ22
DQ23
Vcc
DQ11
DQ10
DQ09
DQ08
Vcc
DQ11
DQ10
DQ09
DQ08
Vcc
DQ11
DQ10
DQ09
DQ08
Vcc
AUSTIN SEMICONDUCTOR
68 - LD. PLCC
[JEDEC MO-47AE]
DQ24
DQ25
DQ26
DQ27
Vss
DQ24
DQ25
DQ26
DQ27
Vss
DQ24
DQ25
DQ26
DQ27
Vss
DQ07
DQ06
DQ05
DQ04
Vss
DQ07
DQ06
DQ05
DQ04
Vss
DQ07
DQ06
DQ05
DQ04
Vss
DQ28
DQ29
DQ30
DQ28
DQ29
DQ30
DQ28
DQ29
DQ30
DQ03
DQ02
DQ01
DQ03
DQ02
DQ01
DQ03
DQ02
DQ01
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
6
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
ORDERINGꢀINFORMATION
PartꢀNumber
AS8S512K32PECͲMS
AS8S512K32PECͲES
AccessꢀSpeed
NA
DeviceꢀGrade
MechanicalꢀSample
EngineeringꢀSample
Industrial
Availability
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
Obsolete
NA
AS8S512K32PECͲ12/IT
AS8S512K32PECͲ15/IT
AS8S512K32PECͲ20/IT
AS8S512K32PECͲ25/IT
AS8S512K32PECͲ12/ET
AS8S512K32PECͲ15/ET
AS8S512K32PECͲ20/ET
AS8S512K32PECͲ25/ET
AS8S512K32PECͲ12/XT
AS8S512K32PECͲ15/XT
AS8S512K32PECͲ20/XT
12ns
15ns
20ns
25ns
12ns
15ns
20ns
25ns
12ns
15ns
20ns
Industrial
Industrial
Industrial
Enhanced
Enhanced
Enhanced
Enhanced
Military
Military
Military
AS8S512K32PECͲ25/XT
25ns
Military
Obsolete
AS8S512K32PECAͲ12/IT
AS8S512K32PECAͲ15/IT
AS8S512K32PECAͲ20/IT
AS8S512K32PECAͲ25/IT
AS8S512K32PECAͲ12/ET
AS8S512K32PECAͲ15/ET
AS8S512K32PECAͲ20/ET
AS8S512K32PECAͲ25/ET
AS8S512K32PECAͲ12/XT
AS8S512K32PECAͲ15/XT
AS8S512K32PECAͲ20/XT
AS8S512K32PECAͲ25/XT
12ns
15ns
20ns
25ns
12ns
15ns
20ns
25ns
12ns
15ns
20ns
25ns
Industrial
Industrial
Industrial
Industrial
Enhanced
Enhanced
Enhanced
Enhanced
Military
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Military
Military
Military
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
7
iPEM
16 MB ASYNC SRAM
AS8S512K32PECA
DOCUMENT TITLE
16Mb, 512K x 32, SRAM, 5.0V, 0.990”sq. - 68 LD. PLCC, Multi-Chip Package [iPEM]
REVISION HISTORY
Rev #
History
Release Date
Status
0.0
Initial Release
September 2005
Advance
0.1
0.2
0.3
Updated Order Chart
January 2009
January 2010
Advance
Advance
Release
Added Micross Information
Upgraded document to “Release” status. March 2011
Obsoleted and discontinued PEC
package which had pin-out errors. Added
PECA package reflecting correct pin-out.
Contact Micross for whitepaper addressing
the pin-out error on the PEC package.
Micross Components reserves the right to change products or specifications without notice.
AS8S512K32PECA
Rev. 0.3 03/11
8
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