MIMMD110A120B [MICROSS]
Rectifier Diode, 1 Phase, 2 Element, 1200V V(RRM), Silicon, MODULE-3;
| 型号： | MIMMD110A120B |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 1200V V(RRM), Silicon, MODULE-3 局域网 光电二极管 |
| 文件： | 总2页 (文件大小：1530K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIMMD110A120B
1200V 110A Rectifier Diode Module
RoHS Compliant
PRODUCT FEATURES
· Glass Passivated Chip
· Aluminum Oxide Ceramic Isolated Metal Baseplate
· Low Reverse Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Inductance Package
APPLICATIONS
· Field Supply For DC Motors
· Line Rectifiers For Transistorized AC Motor Controllers
· Non-controllable Rectifiers For AC/DC Converter
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
VRRM
Parameter
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
Test Conditions
Max.
1200
Unit
V
IF(AV)
TC=85°C Rectangular, d=0.5
TC=85°C Rectangular, d=0.5
TJ=45°C, t=10ms, 50Hz, Sine
TJ=45°C,t=8.3ms, 60Hz, Sine
TJ=45°C, t=10ms, 50Hz, Sine
TJ=45°C,t=8.3ms, 60Hz, Sine
110
A
IF(RMS)
160
A
2500
A
IFSM
I2t
2700
A
31250
36450
416
A2s
A2s
W
I2t (For Fusing)
PD
Power Dissipation
TJ
Junction Temperature
Storage Temperature Range
-40 to +150
-40 to +125
°C
°C
TSTG
Visol
Insulation Test Voltage
AC, 50Hz, t=1min
3000
101
V
g
Weight
ELECTRICAL AND THERMAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
VR=1600V
Min. Typ.
Max.
200
5
Unit
µA
--
--
--
--
--
--
--
IRM
Reverse Leakage Current
VR=1600V, TJ=125°C
IF=200A
mA
V
1.3
1.25
--
1.5
--
VF
Forward Voltage
IF=200A,
TJ=125°C
V
RθJC
Thermal Resistance
Junction-to-Case
0.30
°C /W
MIMMD110A120B
1200V 110A Rectifier Diode Module
RoHS Compliant
MECHANICAL CHARACTERISTICS
Symbol
Torque
Torque
Parameter
Module-to-Sink
Module Electrodes
Test Conditions
Recommended（M6）
Recommended（M5）
Min.
3
Typ.
Max.
Unit
N· m
N· m
5
5
2.5
DA Package Outline (Dimensions in mm)
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