MT5C6808C-45/883C [MICROSS]
Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28;
| 型号： | MT5C6808C-45/883C |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 CD 静态存储器 内存集成电路 |
| 文件： | 总12页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRAM
MT5C6408
8K x 8 SRAM
SRAM MEMORY ARRAY
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-38294
28-Pin DIP (C)
(300 MIL)
28-Pin LCC (EC)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0 10
DQ1 11
DQ2 12
DQ3 13
Vss 14
1
2
3
4
5
6
7
8
9
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
WE\
CE2
A8
•
MIL-STD-883
FEATURES
A9
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\ and CE2
• All inputs and outputs are TTL compatible
28-Pin Flat Pack (F)
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
Vcc
WE\
CE2
A8
2
3
4
5
A9
OPTIONS
• Timing
MARKING
6
A11
OE\
A10
CE1\
DQ8
DQ7
DQ6
DQ5
DQ4
7
8
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
-12
-15
-20
-25
-35
-45
-55*
-70*
9
10
11
12
13
14
A0
DQ1
DQ2
DQ3
Vss
GENERAL DESCRIPTION
The MT5C6408, 8K x 8 SRAM, employs high-speed,
low-power CMOS technology, eliminating the need for clocks
or refreshing. These SRAM’s have equal access and cycle
times.
For flexibility in high-speed memory applications,
Micross Components offers dual chip enables (CE1\, CE2)
and output enable (OE\) capability. These enhancements can
place the outputs in High-Z for additional flexibility in system
design.
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C
E C
F
No. 108
No. 204
No. 302
Ceramic Flatpack
• Operating Temperature Ranges
Industrial (-40oC to +85oC)
Military (-55oC to +125oC)
IT
XT
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH
and CE1\ and OE\ go LOW. The device offers a reduced power
standby mode when disabled. This allows system designs to
achieve low standby power requirements.
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 45ns ac-
cess devices.
These devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
1
SRAM
MT5C6408
FUNCTIONAL BLOCK DIAGRAM
VCC
Vss
A0
A1
A2
A3
A4
A5
A6
A7
DQ8
DQ1
65,536-BIT
MEMORY ARRAY
CE1\
CE2
COLUMN DECODER
OE\
WE\
A8
A9
A10 A11 A12
POWER
DOWN
TRUTH TABLE
MODE
STANDBY
STANDBY
READ
READ
WRITE
CE1\ CE2 WE\ OE\
DQ
POWER
H
X
L
L
L
X
L
H
H
H
X
X
H
H
L
X
X
L
H
X
HIGH-Z STANDBY
HIGH-Z STANDBY
Q
ACTIVE
HIGH-Z ACTIVE
ACTIVE
D
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
2
SRAM
MT5C6408
ABSOLUTE MAXIMUM RATINGS*
*Stresses greater than those listed under “Absolute Maxi-
Voltage on any Input or DQ Relative to Vss........-0.5V to +7.0V mum Ratings” may cause permanent damage to the device.
Voltage on Vcc Supply Relative to Vss.................-0.5V to +7.0V This is a stress rating only and functional operation of the
Storage Temperature….........................................-65oC to +150oC device at these or any other conditions above those indicated
Power Dissipation......................................................................1W in the operation section of this specification is not implied.
Max Junction Temperature..................................................+175°C Exposure to absolute maximum rating conditions for ex-
Lead Temperature (soldering 10 seconds)........................+260oC tended periods may affect reliability.
Short Circuit Output Current................................................50mA
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
2.2
MAX
Vcc+0.5
0.8
UNITS
V
NOTES
1
VIH
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
VIL
ILI
-0.5
-10
V
1, 2
μA
0V ≤ VIN ≤ Vcc
10
Output(s) disabled
0V < VOUT < Vcc
ILO
Output Leakage Current
μA
V
-10
2.4
10
I
OH = -4.0mA
VOH
VOL
Output High Voltage
Output Low Voltage
1
1
IOL = 8.0mA
0.4
V
MAX
PARAMETER
CONDITIONS
SYM
-12
-15
-20
-25
-35
-45 UNITS NOTES
CE\ < VIL; VCC = MAX
f = MAX = 1/tRC (MIN)
Output Open
Power Supply
Current: Operating
180
170
160
155
155
145
mA
3
I
cc
CE\ > VIH; All Other Inputs
< VIL or > VIH, VCC = MAX
f = 0 Hz
40
30
20
10
40
30
20
10
40
30
20
10
40
30
20
10
40
30
20
10
40
30
20
10
mA
mA
mA
mA
ISBTSP
ISBTLP
ISBCSP
ISBCLP
Power Supply
Current: Standby
CE\ > (VCC -0.2); VCC = MAX
All Other Inputs < 0.2V
or > (VCC - 0.2V), f = 0 Hz
CAPACITANCE
DESCRIPTION
CONDITIONS
SYM
MAX UNITS NOTES
TA = 25oC, f = 1MHz
Vcc = 5V
Input Capacitance
6
7
pF
pF
4
4
CI
Output Capacitance
CO
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
3
SRAM
MT5C6408
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
-12
-15
-20
-25
-35
-45
DESCRIPTION
READ CYCLE
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
SYMBOL
tRC
tAA
tACE
tOH
READ cycle time
12
15
20
25
35
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address access time
12
12
15
15
20
20
25
25
35
35
45
45
Chip Enable access time
Output hold from address change
2
2
0
0
0
0
0
0
3
0
3
0
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
7
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
7
8
10
12
15
15
15
15
15
15
25
20
6, 7
0
0
0
0
0
0
7
10
15
15
30
40
6
tWC
tCW
tAW
WRITE cycle time
12
10
10
0
15
13
13
0
20
15
15
0
25
20
20
0
35
30
30
0
45
40
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to end of write
Address valid to end of write
Address setup time
tAS
tAH
Address hold from end of write
WRITE pulse width
0
0
0
0
0
0
tWP
10
7
13
10
0
15
12
0
20
15
0
30
15
5
40
20
5
tDS
Data setup time
tDH
Data hold time
0
tLZWE
tHZWE
Write disable to output in Low-Z
Write Enable to output in High-Z
2
0
0
0
0
0
7
0
7
0
10
0
10
0
15
0
15
0
25
6, 7
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
4
SRAM
MT5C6408
AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V
Input rise and fall times ......................................... 5ns
Input timing reference levels ................................ 1.5V
Output reference levels ....................................... 1.5V
Output load ................................. See Figures 1 and 2
167Ω
167Ω
Q
Q
VTH = 1.73V
VTH = 1.73V
5pF
30pF
Fig. 1 Output Load
Equivalent
Fig. 2 Output Load
Equivalent
7. At any given temperature and voltage condition,
tHZCE is less than tLZCE, and tHZWE is less than tLZWE and
NOTES
1. All voltages referenced to VSS (GND).
2. -3V for pulse width < 20ns
tHZOE is less than tLZOE
.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
unloaded, and f =
1
Hz.
tRC (MIN)
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
t
11. RC = Read Cycle Time.
12. CE2 timing is the same as CE1\ timing. The waveform
6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
allowing for actual tester RC time constant.
is
inverted.
13. Chip enable (CE1\, CE2) and write enable (WE\) can
initiate and terminate a WRITE cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
SYM
MIN
MAX UNITS NOTES
2
---
300
---
V
V
CC for Retention Data
VDR
CE\ > (VCC - 0.2V)
Data Retention Current
μA
VCC = 2V ICCDR
VIN > (VCC - 0.2V)
or < 0.2V
Chip Deselect to Data
Retention Time
tCDR
tR
0
ns
ns
4
Operation Recovery Time
4, 11
tRC
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR > 2V
tCDR
tR
VIH
VIL
VDR
CE\
DON’T CARE
UNDEFINED
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
5
SRAM
MT5C6408
READ CYCLE NO. 1 8, 9
t
RC
VALID
ADDRESS
Q
t
AA
tOH
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10, 12
tR
C
CE\
tA
OE
tHZOE
tLZOE
OE\
DQ
Icc
tLZCE
tHZCE
t
E
ACE
DATA VALID
t
PU
tP
D
DON’T CARE
UNDEFINED
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
6
SRAM
MT5C6408
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
tWC
ADDRESS
tA
W
tAH
tAS
tCW
CE\
tW
P
WE\
tDH
t
DS
DQ
DATA VAILD
7, 12, 13
WRITE CYCLE NO. 2
(Write Enabled Controlled)
tW
t
C
ADDRESS
tAW
tAW
tAH
tCW
CE\
tAS
t
WP
WE\
tDS
tDH
tDH
DQ
DATA VALID
DON’T CARE
UNDEFINED
NOTE: Output enable (OE\) is inactive (HIGH).
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
7
SRAM
MT5C6408
MECHANICAL DEFINITIONS*
Micross Case #108 (Package Designator C)
SMD 5962-38294, Case Outline Z
D
S2
A
Q
L
E
e
b
S1
b2
eA
c
SMD SPECIFICATIONS
MIN
SYMBOL
MAX
0.225
0.026
0.065
0.018
1.485
0.310
A
b
b2
c
D
E
---
0.014
0.045
0.008
---
0.240
eA
e
0.300 BSC
0.100 BSC
L
0.125
0.015
0.005
0.005
0.200
0.070
---
Q
S1
S2
---
NOTE: These dimensions are per the SMD. Micross’package dimensional limits
may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408
Micross Components reserves the right to change products or specifications without notice.
Rev. 4.2 01/10
8
SRAM
MT5C6408
MECHANICAL DEFINITIONS*
Micross Case #204 (Package Designator EC)
SMD 5962-38294, Case Outline U
D1
B2
D2
L2
e
E3
E
E1
E2
h x 45o
D
L
hx45o
B1
D3
A
A1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.075
0.065
0.028
A
A1
B1
B2
D
0.060
0.050
0.022
0.072 REF
0.342
0.358
D1
D2
D3
E
0.200 BSC
0.100 BSC
---
0.540
0.358
0.560
E1
E2
E3
e
0.400 BSC
0.200 BSC
---
0.558
0.050 BSC
0.040 REF
h
L
L2
0.045
0.075
0.055
0.095
NOTE: These dimensions are per the SMD. Micross’package dimensional limits
may differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C6408
Micross Components reserves the right to change products or specifications without notice.
Rev. 4.2 01/10
9
SRAM
MT5C6408
MECHANICAL DEFINITIONS*
Micross Case #302 (Package Designator F)
SMD 5962-38294, Case Outline M
e
b
D
S
Top View
E
L
A
c
Q
E2
E3
SMD SPECIFICATIONS
SYMBOL
MIN
0.045
0.015
0.004
---
0.350
0.180
0.030
MAX
0.115
0.019
0.009
0.640
0.420
---
A
b
c
D
E
E2
E3
e
---
0.050 BSC
L
Q
S
0.250
0.026
0.000
0.370
0.045
---
NOTE: These dimensions are per the SMD. Micross’package dimensional limits
may differ, but they will be within the SMD limits.
* All measurements are in inches.
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
10
SRAM
MT5C6408
ORDERING INFORMATION
EXAMPLE: MT5C6408C-25L/XT
EXAMPLE: MT5C6408EC-15L/IT
Package Speed
Device Number
Package Speed
Options** Process
Device Number
Options** Process
Type
C
ns
-12
-15
-20
-25
-35
-45
-55
-70
Type
EC
EC
EC
EC
EC
EC
EC
EC
ns
-12
-15
-20
-25
-35
-45
-55
-70
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
C
C
C
C
C
C
C
EXAMPLE: MT5C6408F-55/883C
Package Speed
Device Number
Options** Process
Type
ns
-12
-15
-20
-25
-35
-45
-55
-70
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
MT5C6408
F
F
F
F
F
F
F
F
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
11
SRAM
MT5C6408
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE*
Micross Package Designator EC
Micross Package Designator C
Micross Part #
SMD Part #
MT5C6808EC-12/883C
MT5C6808EC-12L/883C
MT5C6808EC-20/883C
MT5C6808EC-20L/883C
MT5C6808EC-25/883C
MT5C6808EC-25L/883C
MT5C6808EC-35/883C
MT5C6808EC-35L/883C
MT5C6808EC-45/883C
MT5C6808EC-45L/883C
MT5C6808EC-55/883C
MT5C6808EC-55L/883C
MT5C6808EC-70/883C
5962-3829447MUX
5962-3829446MUX
5962-3829458MUA
5962-3829457MUA
5962-3829456MUA
5962-3829455MUA
5962-3829454MUA
5962-3829453MUA
5962-3829452MUA
5962-3829451MUA
5962-3829450MUA
5962-3829449MUA
5962-3829448MUA
Micross Part #
SMD Part #
MT5C6808C-12/883C
MT5C6808C-12L/883C
MT5C6808C-20/883C
MT5C6808C-20L/883C
MT5C6808C-25/883C
MT5C6808C-25L/883C
MT5C6808C-35/883C
MT5C6808C-35L/883C
MT5C6808C-45/883C
MT5C6808C-45L/883C
MT5C6808C-55/883C
MT5C6808C-55L/883C
MT5C6808C-70/883C
5962-3829447MZX
5962-3829446MZX
5962-3829458MZA
5962-3829457MZA
5962-3829456MZA
5962-3829455MZA
5962-3829454MZA
5962-3829453MZA
5962-3829452MZA
5962-3829451MZA
5962-3829450MZA
5962-3829449MZA
5962-3829448MZA
Micross Package Designator F
Micross Part #
SMD Part #
MT5C6808F-12/883C
MT5C6808F-12L/883C
MT5C6808F-20/883C
MT5C6808F-20L/883C
MT5C6808F-25/883C
MT5C6808F-25L/883C
MT5C6808F-35/883C
MT5C6808F-35L/883C
MT5C6808F-45/883C
MT5C6808F-45L/883C
MT5C6808F-55/883C
MT5C6808F-55L/883C
MT5C6808C-70/883C
5962-3829447MMX
5962-3829446MMX
5962-3829458MMA
5962-3829457MMA
5962-3829456MMA
5962-3829455MMA
5962-3829454MMA
5962-3829453MMA
5962-3829452MMA
5962-3829451MMA
5962-3829450MMA
5962-3829449MMA
5962-3829448MZA
*Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Micross Components reserves the right to change products or specifications without notice.
MT5C6408
Rev. 4.2 01/10
12
相关型号：
©2020 ICPDF网 联系我们和版权申明