MTPIRFF9120T257N [MICROSS]
Power Field-Effect Transistor, 5.3A I(D), 100V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN;
| 型号： | MTPIRFF9120T257N |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Power Field-Effect Transistor, 5.3A I(D), 100V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：1161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MTPIRFF9120
100V, P-Channel, Repetitive Avalanche -
Advanced Power MOSFET
AVAILABILITY:
TO‐39
Isolated TO‐257
Mil‐Temp Plus
FEATURES:
Fast Switching
Repetitive Avalanche
Dynamic dv/dt Rating
Hermetically Sealed packaging
Simple Drive Requirements
Ease of Paralleling
1 – Gate, 2 – Drain, 3 ‐ Source
PRODUCT SUMMARY
1 – Source, 2 – Gate, 3 ‐ Drain
The use of an enhancement mode FET is a key
element in Minco’s Power MOSFET product family.
This advanced technology minimizes on‐state
resistance, provides superior switching
MINCO PART NUMBER
MTPIRFF9120T39
BVDSS
‐100 V
‐100 V
RDS(on)
0.85 Ω
ID
‐4.0 A
‐5.3 A
MTPIRFF9120T257N
0.85 Ω
performance and allows the device(s) to withstand
high energy pulses in the avalanche and
commutation modes. These devices are well suited
for use in low voltage applications such as audio
amplifiers, high energy DC/DC converters and DC
motor control.
MANUFACTURED USING
:
PCFQD5P10W
P‐Channel QFET MOSFET
ABSOLUTE MAXIMUM RATINGS
LIMIT
PARAMETER
Drain ‐ Source Voltage
SYMBOL MTPIRFF9120T39 MTPIRFF9120T257N UNITS
VDS
VDGR
ID
‐100
‐100
‐4.0
‐100
‐100
‐5.3
V
V
Drain ‐ Gate Voltage (RGS = 20KΩ)
Continuous Drain Current (@25°C)
Pulsed Drain Current
A
IDM
VGS
PD
‐16.0
‐21.0
A
±20
Gate ‐ Source Voltage
V
Max. Power Dissapation (@25°C)
Linear Derating Factor
20
30
W
W/K
A
LDF
ILM
TJ
0.16
‐16.0
0.24
‐21
Inductive Current, Clamped
Max Operating Junction Temperature
Storage Temperature
‐55°C to 150°C
‐55°C to 150°C
°C
°C
°C
TSTG
300 (0.063" from case)
Lead Temperature
MTPIRFF9120 -Rev 3.0- 05/14
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
MTPIRFF9120
100V, P-Channel, Repetitive Avalanche -
Advanced Power MOSFET
ELECTRICAL CHARACTERISTICS: All Specifications @ TA = 25˚C unless otherwise noted
SPECIFICATION LIMTS
PARAMETER
SYMBOL DEVICE
CONDITIONS
VGS = 0V, ID = ‐250µA
VGS = 0V, ID = ‐250µA
VGS = ‐20V
TEMP
MIN
TYP
MAX
UNITS NOTES
V
BOTH
Drain ‐ Source Breakdown
Voltage
‐100.0
‐2.0
‐ ‐
‐ ‐
‐ ‐
BVDSS
BOTH
Gate Threshold Voltage
‐ ‐
‐ ‐
‐ ‐
‐4.0
V
VGS(th)
BOTH
Gate ‐ Source Leakage ,
Forward
‐100.0
100.0
nA
nA
µA
µA
A
IGSS
BOTH
Gate ‐ Source Leakage,
Reverse
VGS = 20V
‐ ‐
IGSS
‐ ‐
‐ ‐
‐1
‐1
‐10
‐10
‐10
‐10
‐ ‐
VDS = Max. Rating, VGS = 0V
VDS = Max. Rating *0.8, VGS=0V
VDS = Max. Rating, VGS = 0V
VDS = Max. Rating *0.8, VGS=0V
T39
TC=125°C
TC=125°C
Zero Gate Voltage Drain
Current
IDSS
‐ ‐
‐1
T257N
‐ ‐
‐1
T39
‐4.00
‐5.30
‐ ‐
‐ ‐
On‐State Drain Current
ID(on)
RDS(on)
VDS ≥ ID(on) X RDS(on) Max, VGS = ‐10V
VGS = ‐10.0, ID = ‐2.6A
T257N
‐ ‐
‐ ‐
T39
0.80
0.80
0.85
0.85
Static Drain ‐ Source On‐
State Resistance
Ω
T257N
‐ ‐
Forward Transconductance
Input Capacitance
BOTH
1.25
1.50
‐ ‐
S
gfs
CISS
VDS ≥ ID(on) x RDS(on) Max, ID = ‐2.0A
VGS=0V, VDS= ‐25V, f=1.0MHz
VGS=0V, VDS= ‐25V, f=1.0MHz
VGS=0V, VDS= ‐25V, f=1.0MHz
T39
T257N
T39
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
4.3
‐ ‐
1.3
‐ ‐
1.0
‐ ‐
‐ ‐
185.0
185.0
115.0
115.0
50.0
50.0
25.0
30.0
50.0
30.0
50.0
50.0
50.0
50.0
16.0
12.0
7.0
200.0
200.0
135.0
135.0
75.0
75.0
50.0
60.0
100.0
50.0
100.0
100.0
100.0
100.0
22.0
16.3
9.0
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
nH
Output Capacitance
COSS
CRSS
td(on)
td(off)
tr
T257N
T39
Reverse Transfer
Capacitance
T257N
T39
VDD=50V, ID=‐4.0A, RG=7.5Ω
VDD=50V, ID=‐4.0A, RG=10.0Ω
Turn‐On Delay Time
Turn‐Off Delay Time
Rise Time
T257N
T39
VDD=50V, ID=‐4.0A, RG=7.5Ω
T257N
T39
VDD=50V, ID=‐4.0A, RG=10.0Ω
VDD=50V, ID=‐4.0A, RG=7.5Ω
T257N
T39
VDD=50V, ID=‐4.0A, RG=10.0Ω
VDD=50V, ID=‐4.0A, RG=7.5Ω
Fall Time
tf
T257N
T39
VDD=50V, ID=‐4.0A, RG=10.0Ω
VGS=‐15.0V, ID=‐8.0A, VDS=0.8V x VDS Max
VGS=‐10.0V, ID=‐8.0A, VDS=0.5V x VDS Max
VGS=‐15.0V, ID=‐8.0A, VDS=0.8V x VDS Max
VGS=‐10.0V, ID=‐8.0A, VDS=0.5V x VDS Max
VGS=‐15.0V, ID=‐8.0A, VDS=0.8V x VDS Max
VGS=‐10.0V, ID=‐8.0A, VDS=0.5V x VDS Max
Measured from header to die center 0.5mm(0.20")
Measured from case to die center 0.6mm(0.25")
Total Gate Charge
Gate ‐ Source Charge
Qg
T257N
T39
Qgs
Qgd
LD +LS
T257N
T39
3.5
4.7
9.0
11.0
9.0
Gate ‐ Drain (Miller)
Charge
T257N
T39
7.0
7.0
‐ ‐
Internal Drain Inductance
T257N
8.7
‐ ‐
MTPIRFF9120 -Rev 3.0- 05/14
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
MTPIRFF9120
100V, P-Channel, Repetitive Avalanche -
Advanced Power MOSFET
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SPECIFICATION LIMTS
PARAMETER
SYMBOL DEVICE
CONDITIONS
TEMP
MIN
TYP
‐ ‐
MAX
UNITS NOTES
A
T39
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐ ‐
‐4.0
‐5.3
‐16.0
‐21.0
‐6.3
‐4.8
200
200
3.1
Continuous Source Current
(Body Diode)
IS
T257N
‐ ‐
T39
‐ ‐
Pulse Source Current
(Body Diode)
A
V
ISM
T257N
‐ ‐
T39
VSD
‐ ‐
TC=25°C, IS= ‐4.0A, VGS=0V
TC=25°C, IS= ‐5.3A, VGS=0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
Forward Turn‐On Time
T257N
‐ ‐
T39
trr
180
180
2.5
2.5
0
TJ=150°C, IF= ‐4.0A, di/dt = 100A/µS
TJ=150°C, IF= ‐5.3A, di/dt = 100A/µS
TJ=150°C, IF= ‐4.0A, di/dt = 100A/µS
TJ=150°C, IF= ‐5.3A, di/dt = 100A/µS
Intrinsic Turn‐On Time
nS
µC
nS
T257N
T39
Qrr
T257N
3.1
T39
ton
‐ ‐
T257N
Intrinsic Turn‐On Time
0
‐ ‐
ORDERING INFORMATION
DESCRIPTION
Operation Range
‐55°C to 150°C
‐55°C to 150°C
MINCO PART NUMBER
MTPIRFF9120T39MP
MTPIRFF9120T257N
Package
100V, 4.0A, P‐Channel, Power MOSFET
TO‐39
100V, 5.3 A, P‐Channel, Power MOSFET in Isolated Package
TO‐257
TYPICAL TRANSFER CHARACTERISTICS (TO‐39)
TYPICAL OUTPUT CHARACTERISITCS (TO‐39)
MTPIRFF9120 -Rev 3.0- 05/14
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
MTPIRFF9120
100V, P-Channel, Repetitive Avalanche -
Advanced Power MOSFET
TYPICAL SATURATION CHARACTERISTICS (TO‐39)
TRANSCONDUCTANCE Vs. DRAIN CURRENT (TO‐39)
SOURCE – DRAIN DIODE FORWARD CURRENT (TO‐39)
BREAKDOWN VOLTAGE Vs. TEMPERATURE (TO‐39)
MTPIRFF9120 -Rev 3.0- 05/14
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
MTPIRFF9120
100V, P-Channel, Repetitive Avalanche -
Advanced Power MOSFET
NORMALIZED ON‐RESISTANCE Vs. TEMPERATURE
TYPICAL ON‐RESISTANCE Vs. DRAIN CURRENT (TO‐39)
(TO‐39)
POWER Vs. TEMPERATURE DERATING CURVE (T0‐39)
TYPICAL CAPACITANCE Vs. DRAIN‐TO‐SOURCE
CURRENT (TO‐39)
MTPIRFF9120 -Rev 3.0- 05/14
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
MTPIRFF9120
100V, P-Channel, Repetitive Avalanche -
Advanced Power MOSFET
MECHANICAL DRAWINGS
A
E
A1
oP
D
O
D1
0.002
L
ob 3 PLS
A2
e
Inches
Millimeters
3.05 BSC
2.54 BSC
Dimensional
Symbol
A
Min
Max
Min
4.83
0.89
Max
5.08
1.14
0.190
0.035
0.200
0.045
A1
A2
ob
D
0.120 BSC
0.100 BSC
0.025
0.645
0.410
0.035
0.665
0.430
0.64
16.38
10.41
0.89
16.89
10.92
D1
e
E
0.410
0.500
0.527
0.140
0.422
0.750
0.537
0.150
10.41
12.70
13.39
3.56
10.71
19.05
16.64
3.81
L
O
oP
MTPIRFF9120 -Rev 3.0- 05/14
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
MTPIRFF9120
100V, P-Channel, Repetitive Avalanche -
Advanced Power MOSFET
k
C
L
Lead Finish
BOTTOMVIEW
b2
b1
k1
Section A -A
Scaled 5x
Base Metal
e1
e
TOP VIEW
A
F1
F
Q
L
D1
N
D
A A
Inches
Millimeters
Dimensional
Symbol
A
Min
Max
Min
Max
6.60
0.48
0.53
0.61
9.40
8.51
0.240
0.016
0.016
0.016
0.350
0.315
0.260
0.019
0.021
0.024
0.370
0.335
6.10
0.41
0.41
0.41
8.90
8.00
b
b1
b2
D
D1
e
0.200 BSC
0.100 BSC
5.1 BSC
2.54 BSC
0.91
e1
F
0.036
0.045
0.006
0.033
0.038
0.010
1.14
0.15
0.84
0.97
0.25
F1
k
0.004
0.028
0.033
0.008
0.10
0.71
0.84
0.20
k1
Q
45° BSC
90° BSC
0.785 RAD
1.571 RAD
MTPIRFF9120 -Rev 3.0- 05/14
Minco Technology Labs, LLC reserves the right to change products or specification without notice.
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