61048 [MII]
SILICON PHOTOTRANSISTOR; 硅光电晶体管
| 型号： | 61048 |
| 厂家： | 
Micropac Industries |
| 描述： | SILICON PHOTOTRANSISTOR |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
61048
SILICON PHOTOTRANSISTOR
(TYPE GS4123)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Applications:
•
•
•
Hermetically sealed
•
•
•
•
Incremental Encoding
Reflective Sensors
Position Sensors
Level Sensors
High Sensitivity
Base lead provided for conventional transistor
biasing
•
•
Wide receiving angle for easy alignment
Spectrally Matched to the 62030 Series LED.
DESCRIPTION
This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large (0.06” X 0.06”)
sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use
of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to
MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature (See part selection guide for actual operating temperature)...................................... -65°C to +125°C
Collector-Emitter Voltage........................................................................................................................................................50V
Emitter-Collector Voltage..........................................................................................................................................................7V
Continuous Collector Current ..............................................................................................................................................50mA
Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW
Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C
Package Dimensions
Schematic Diagram
0.210 [5.33]
0.170 [4.32]
0.030 [0.76] MAX
C
0.019 Ø[0.48]
3 LEADS
0.016 Ø[0.41]
COLLECTOR
Ø0.100 [Ø2.54]
3
0.230Ø [5.84]
0.209Ø [5.31]
0.195Ø [4.95]
0.178Ø [4.52]
2
0.048 [1.22]
0.028 [0.71]
E
B
1
BASE
0.046 [1.17]
0.036 [0.91]
0.500 [12.70]
MIN
EMITTER
45°
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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61048
SILICON PHOTOTRANSISTOR (GS4123)
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
NOTE
Light Current
5
20
I
20
30
30
mA
V
= 5.0V, H = 20 mW/cm2
CE
1
L
50
50
--
Dark Current
I
50
nA
V
V
V
= 5V, H = 0
= 100µA
I = 100µA
D
CE
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Light Current Rise Time
BV
30
7
I
C
CEO
ECO
BV
E
8
10
15
20
0.2
10
µs
R = 100Ω, V = 5V, I = 1.0mA
CC
L
L
t
r
Saturation Voltage
V
V
I
= 0.4mA, H = 20 mW/cm2
C
CE (sat)
θ
Angular Response
degrees
2
NOTES:
1.
2.
Irradiance in mW/cm2 from tungsten source at a color temperature of 2870K.
The angle between incidence for peak response and incidence for 50% of peak response.
RELATIVE SPECTRAL RESPONSE
ANGULAR RESPONSE
100
100
90
80
60
40
20
0
80
70
PULSE RESPONSE TEST
CIRCUIT AND WAVEFORM
Vcc
90%
60
50
40
30
20
10
H
DUT
BASE
OPEN
10%
OUTPUT
RL
IL
tr
tf
0
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ANGLE [DEGREES]
WAVELENGTH [um]
DARK CURRENT versus TEMPERATURE
COLLECTOR EMITTER CHARACTERISTICS
10
10
SOURCE TEMP - 2870
TUNGSTEN SOURCE
1.0
0.1
V
=30 V
T
= 25°C
CC
M = 0
A
8.0
6.0
4.0
2.0
0
0.01
0.001
H = 50
H = 10
0.0001
H = 20
0.00001
-50
-25
0
25
50
75
100
125
0
5
10
15
20
25
30
35
A
T
- AMBIENT TEMPERATURE - °C
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Bias Voltage-Collector/Emitter
Irradiance (H)
SYMBOL
MIN
5
MAX
10
25
UNITS
mA
I
F
H
15
mW/cm2
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
IL Range
5 to 20mA
5 to 20mA
20 to 30mA
20 to 30mA
30 to 50mA
30 to 50mA
+50mA
61048-001
61048-101
61048-002
61048-102
61048-003
61048-103
61048-004
61048-104
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
+50mA
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
6 - 5
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