66099-401 [MII]
HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER; 高压耐辐射光电耦合器
| 型号： | 66099-401 |
| 厂家： | 
Micropac Industries |
| 描述： | HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH VOLTAGE
Mii
66099-4XX
RADIATION TOLERANT OPTOCOUPLER
OPTOELECTRONIC PRODUCTS
DIVISION
Rev A 9\25\02
Features:
Applications:
•
Designed to meet or exceed MIL-PRF-19500
•
•
•
•
•
Eliminate ground loops
radiation requirements
Level shifting
Line receiver
•
•
•
High Current Transfer Ratio - 200% typical
1kVdc electrical input to output isolation
Base lead provided for conventional transistor
biasing
Switching power supplies
Motor control
•
150 V Breakdown voltage
DESCRIPTION
The 66099-4XX optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a
high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to both
proton and total dose radiation.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C
Lead Solder Temperature (1/16” (1.6mm) from case for 5 seconds)................................................................................ 240°C
Input Diode Forward DC Current.........................................................................................................................................40mA
Input Power Dissipation (see Note 1)................................................................................................................................80mW
Reverse Input Voltage .............................................................................................................................................................3V
Collector-Base Voltage.........................................................................................................................................................150V
Collector-Emitter Voltage .....................................................................................................................................................150V
Emitter-Base Voltage................................................................................................................................................................6V
Continuous Collector Current ............................................................................................................................................300mA
Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW
Notes:
1. Derate linearly 0.80 mW/°C above 25°C.
2. Derate linearly 3.0 mW/°C above 25°C.
Package Dimensions
Schematic Diagram
6 LEADS
Ø0.016 [0.41]
Ø0.019 [0.48]
0.040 [1.02]
MAX.
A
K
C
3
5
7
5
6
0.305 [7.75]
0.335 [8.51]
0.370 [9.40]
0.336 [8.51]
7
0.045 [1.14]
0.029 [0.73]
3
Ø0.200 [5.08]
2
1
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
45°
E
B
1
2
0.034 [0.864]
0.028 [0.711]
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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66099–4XX
HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER
Rev A 9\25\02
ELECTRICAL CHARACTERISTICS
°
TA = 25 C unless otherwise specified.
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
SYMBOL
MIN
TYP
TYP
MAX
100
2
UNITS
TEST CONDITIONS
I
R
µA
V
V = 2V
R
V
F
0.8
I = 10mA
F
OUTPUT TRANSISTOR CHARACTERISTICS
°
TA = 25 C unless otherwise noted
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
SYMBOL
MIN
150
150
4
MAX
UNITS
TEST CONDITIONS
V
V
V
V
V
V
I = 100µA, I = 0, I = 0
C B F
(BR)CBO
(BR)CEO
(BR)EBO
I
= 1mA, I = 0, I = 0
B F
C
I
= 0mA, I = 100µA, I = 0
C
E
F
I
100
nA
V
CE
= 20V
CEO
COUPLED CHARACTERISTICS
°
TA = 25 C unless otherwise noted
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Current Transfer Ratio
CTR
100
%
V
V
= 1V, I = 10mA
CE F
Collector-Emitter Saturation Voltage
Input-Output Isolation Current
Rise Time
V
0.3
100
20
I
V
V
= 20mA, I = 10mA
C
CE(SAT)
F
I
nA
µs
V
I-O
= 1000V
ISO
t
= 10V, I = 10mA,
F
r
CE
CE
R = 100Ω
L
Fall Time
t
20
µs
= 10V, I = 10mA,
F
f
R = 100Ω
L
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
0
MAX
10
UNITS
Input Current, Low Level
Input Current, High Level
Operating Temperature
I
FL
µA
mA
°C
I
1
20
FH
T
A
-55
100
ORDERING INFORMATION:
PART NUMBER
66099-401
DESCRIPTION
Radiation Tolerant, High Voltage Optocoupler, Commercial
66099-415
Radiation Tolerant, High Voltage Optocoupler, Screened
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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