32H2BA0070 [MIMIX]
Wide Band Medium Power Amplifier, 30000MHz Min, 36000MHz Max, DIE-14;
| 型号： | 32H2BA0070 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | Wide Band Medium Power Amplifier, 30000MHz Min, 36000MHz Max, DIE-14 射频 微波 |
| 文件： | 总6页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
Chip Device Layout
Features
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
16.0 dB Small Signal Gain
+33.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 30.0-36.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +33.0 dBm.The
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector.This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
+6.0 VDC
950 mA
+0.3 VDC
+15 dBm
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF TAble
4
4
Channel Temperature (Tch) MTTF Table
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
dB
dB
Min.
30.0
-
-
-
-
-
-
Typ.
-
Max.
36.0
-
-
-
-
-
-
-
+5.5
0.0
880
-
Frequency Range (f)
Input Return Loss (S11)
16.0
20.0
16.0
+/-0.5
40.0
+24.0
+33.0
+4.5
-0.7
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (∆S21)
Reverse Isolation (S12)
dB
dB
2
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=4.5V,Vg=-0.7V Typical)
dBm
dBm
VDC
VDC
mA
VDC
1,2
-
-
-1.0
-
-
440
0.3
3
Detector (diff) Output at 20 dBm
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6kΩ.
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
Power Amplifier Measurements
0070_S21
0070_S12
20
0
-5
18
16
14
12
10
8
DB(|S[2,1]|)
All Sources
DB(|S[1,2]|)
All Sources
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
-90
-95
-100
6
4
2
0
-2
-4
-6
-8
-10
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
0070_S11
0070_S22
0
-2
-4
-6
0
-2
DB(|S[2,2]|)
All Sources
DB(|S[1,1]|)
All Sources
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
0070, Average IM3, 4.5V, 110mA, +15dBm per tone
0070 P1dB
28
27
26
25
24
23
22
21
20
19
18
42
40
38
36
34
32
30
28
26
24
29
30
31
32
33
34
35
36
37
Frequency, GHz
29
30
31
32
33
34
35
36
37
38
Frequency GHz
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
1.141
(0.045)
1.541 1.941
(0.061) (0.076)
2.341
(0.092)
2.741 2.941
(0.108) (0.116)
Mechanical Drawing
2.500
(0.098)
2
3
4
5
6
7
1.851
(0.073)
8
1.710
(0.067)
1
14
13
12
11
10
9
0.0
0.0
1.141
(0.045)
1.541
(0.061)
1.941
(0.076)
2.341 2.741 2.941 3.300
(0.092) (0.108) (0.116) (0.130)
(Note: Engineering designator is 32H2BA0070)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.115 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vg2)
Bond Pad #5 (Vd2)
Bond Pad #6 (VDIF1)
Bond Pad #7 (VIN2)
Bond Pad #8 (RF Out)
Bond Pad #9 (VIN1)
Bond Pad #10 (VDIF2)
Bond Pad #11 (Vd4)
Bond Pad #12 (Vg4)
Bond Pad #13 (Vd3)
Bond Pad #14 (Vg3)
Bias Arrangement
Vd1,2
VDIF2
Vg1,2
VIN2
Bypass Capacitors - See App Note [3]
2
3
4
5
6
7
8
RF Out
1
RF In
Pre-production
VIN1
14
13
12
11
10
9
Vg3,4
VDIF1
Vd3,4
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
App Note [1] Biasing - It is recommended to separately bias the upper and lower amplifiers at Vd(1,2)=4.5V Id(1+2)=220mA, and
Vd(3,4)=4.5V Id(3+4)=220mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=110mA,
Id2=Id4=110mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to
sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate
voltage needed to do this is -0.7V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector,
which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal.The
common bias terminal is Vin, and is nominally set to forward bias both diodes.The bias is normally provided in 1 of 2 ways.The Vin
port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively,
Vin can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rin in the range 3 - 6kΩ.
App Note [3] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC
bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
MTTFTable (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Channel
Rth
MTTF Hours
FITs
Temperature
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
deg Celsius
deg Celsius
deg Celsius
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions: Vd1=Vd2=Vd3=Vd4=4.5V, Id1=Id2=Id3=Id4=110mA
Pre-production
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
Device Schematic
VD2
VIN2
VD1
VDIF2
VG1
5 Ohm
5 Ohm
5 Ohm
200 Ohm
5 Ohm
90 Ohm
VG2
3
1
50 Ohm
5 Ohm
50 Ohm
2
5 Ohm
5 Ohm
5 Ohm
90 Ohm
CAP
200 Ohm
450 Ohm
50 Ohm
400 Ohm
CAP
400 Ohm
50 Ohm
RFin
350 Ohm
2
2
3
1
1
3
3
3
2
1
1
2
RFout
350 Ohm
50 Ohm
50 Ohm
400 Ohm
400 Ohm
450 Ohm
200 Ohm
2
5 Ohm
5 Ohm
5 Ohm
90 Ohm
90 Ohm
5 Ohm
5 Ohm
1
50 Ohm
50 Ohm
3
VG4
VG3
5 Ohm
5 Ohm
200 Ohm
5 Ohm
VD3
VD4
VDIF1
VIN1
Pre-production
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
32H2BA0070
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
2
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
+
Germanium should be avoided).The work station temperature should be 310 C 10 C. Exposure to these
-
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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