XL1000-BD_10 [MIMIX]
20.0-40.0 GHz GaAs MMIC; 20.0-40.0 GHz的砷化镓MMIC
| 型号： | XL1000-BD_10 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 20.0-40.0 GHz GaAs MMIC |
| 文件： | 总7页 (文件大小：1505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 18-Jan-10
L1000-BD
Features
Chip Device Layout
Self Bias Architecture
Small Size
3.0 or 5.0 V Operation
20.0 dB Small Signal Gain
2.0 dB Noise Figure
+9.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s three stage 20.0-40.0 GHz GaAs
MMIC low noise amplifier has a small signal gain of 20.0
dB with a noise figure of 2.0 dB across the band.This
MMIC uses Mimix Broadband’s GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
+7.0 VDC
70 mA
+12 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)1 +175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
mA
Min.
20.0
6.0
4.0
12.0
-
30.0
-
-
-
-
-
Typ.
-
Max.
40.0
-
-
-
-
-
3.0
-
-
+5.0
50
Frequency Range (f)
2
Input Return Loss (S11) @ 22.0-36.0 GHz
12.0
10.0
20.0
+/-4.0
45.0
2.0
+9.0
+16.0
+3.0
35
2
Output Return Loss (S22) @ 22.0-36.0 GHz
2
Small Signal Gain (S21)
Gain Flatness ( S21)
2
Reverse Isolation (S12)
2
Noise Figure (NF) @ 24.0-40.0 GHz
Output Power for 1 dB Compression (P1dB) @ 5.0V
Output Third Order Intercept Point (OIP3) @ 5.0V
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=3.0V or 5.0V)
(2) Unless otherwise indicated min/max over 20.0-40.0 GHz and biased at Vd=5V, Id=50mA.
Page 1 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 18-Jan-10
L1000-BD
Low Noise Amplifier Measurements (On-Wafer1)
XL1000-BD, Vd=3.0 V, Id=35 mA (~1000 devices)
XL1000-BD, Vd=3.0 V, Id=35 mA (~1000 devices)
26
24
22
20
18
16
14
12
10
8
0
-10
-20
-30
-40
-50
-60
-70
-80
6
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
Min
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
Max
Median
Mean
Max
Median
Mean
-3sigma
XL1000-BD, Vd=3.0 V, Id=35 mA (~1000 devices)
XL1000-BD, Vd=3.0 V, Id=35 mA (~1000 devices)
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
Max
Median
Mean
-3sigma
Max
Median
Mean
-3sigma
XL1000-BD, Vd=3.0 V, Id=50 mA (~130 devices)
XL1000-BD, Vd=3.0 V (18,935 devices)
13.0
12.0
11.0
10.0
9.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8.0
7.0
6.0
5.0
4.0
3.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
Min
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
Max
Median
Mean
-3sigma
Max
Median
Mean
Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out
pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix“T-Pad Transition”application
note.
Page 2 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 18-Jan-10
L1000-BD
Low Noise Amplifier Measurements (On-Wafer1) (cont.)
XL1000-BD, Vd=5.0 V, Id=50 mA (~19,300 devices)
XL1000-BD, Vd=5.0 V, Id=50 mA (~19,300 devices)
28
26
24
22
20
18
16
14
12
10
8
0
-10
-20
-30
-40
-50
-60
-70
-80
6
4
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
Max
Median
Mean
-3sigma
+3sigma
Median
Mean
-3sigma
XL1000-BD, Vd=5.0 V, Id=50 mA (~19,300 devices)
XL1000-BD, Vd=5.0 V, Id=50 mA (~19,300 devices)
0
-5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-10
-15
-20
-25
-30
-35
-40
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
Max
Median
Mean
-3sigma
Max
Median
Mean
-3sigma
XL1000-BD, Vd=5.0 V, Id=50 mA (~130 devices)
XL1000-BD, Vd=5.0 V, Id=50 mA (~4170 Devices)
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8.0
7.0
6.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Frequency (GHz)
Max
Median
Mean
-3sigma
Max
Median
Mean
-3sigma
Note [1] Measurements – On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out
pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix“T-Pad Transition”application
note.
Page 3 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 18-Jan-10
L1000-BD
S-Parameters (On-Wafer1)
Typcial S-Parameter Data for XL1000-BD
Vd=5.0 V, Id=52 mA
Frequency
(GHz)
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
S11
S11
(Ang)
S21
S21
(Ang)
S12
(Mag)
S12
(Ang)
168.35
126.40
52.59
S22
S22
(Ang)
(Mag)
0.746
0.660
0.142
0.100
0.140
0.170
0.200
0.211
0.212
0.191
0.176
0.159
0.127
0.121
0.111
0.111
0.122
0.138
0.185
0.237
0.291
0.382
0.446
0.506
0.591
0.633
(Mag)
2.544
6.840
14.715
13.152
12.237
11.946
12.003
11.981
11.914
11.573
11.181
10.740
9.961
9.490
9.060
8.472
8.150
7.851
7.420
7.107
6.778
6.264
5.900
5.471
4.767
4.314
(Mag)
0.684
0.625
0.534
0.474
0.395
0.337
0.286
0.274
0.269
0.263
0.254
0.243
0.217
0.206
0.190
0.170
0.160
0.147
0.139
0.136
0.137
0.149
0.162
0.176
0.197
0.210
-165.97
149.17
2.00
-163.20
129.51
86.23
42.30
21.38
3.82
-16.13
-25.82
-34.54
-47.28
-53.64
-64.48
-89.94
-110.67
-130.72
-155.73
-171.07
175.33
158.32
148.19
138.34
124.05
115.88
24.56
0.0017
0.0024
0.0021
0.0018
0.0017
0.0017
0.0028
0.0024
0.0029
0.0034
0.0038
0.0037
0.0036
0.0037
0.0043
0.0035
0.0021
0.0029
0.0038
0.0030
0.0036
0.0013
0.0028
0.0023
0.0021
0.0020
-124.58
-138.66
-163.12
176.63
152.50
128.14
90.54
65.73
43.21
15.00
-0.75
-14.39
-32.44
-42.09
-51.51
-67.19
-80.04
-92.90
-111.00
-128.23
-144.49
-167.73
179.76
167.50
153.19
143.72
-14.35
-120.61
-170.24
154.80
125.13
84.11
58.08
33.30
-2.82
-25.58
-47.03
-77.92
-96.70
-115.14
-141.75
-158.94
-176.20
158.47
140.91
124.00
98.04
12.19
-16.42
-49.65
-88.17
-116.99
-127.87
-150.83
-173.21
-176.89
151.73
138.19
118.88
109.21
95.25
104.56
59.79
68.81
40.92
10.28
-17.50
-7.95
7.75
80.75
63.80
38.77
22.90
-8.93
Note [1] S-Parameters – On-Wafer S-Parameters have been taken using bias conditions as shown. Measurements are referenced 150 um in from RF
In/Out pad edge.
Page 4 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 18-Jan-10
L1000-BD
Mechanical Drawing
1.000
(0.039)
0.678
(0.027)
0.678
2
3
1
(0.027)
4
0.0
1.880
(0.074)
2.000
(0.079)
0.0
0.309
(0.012)
(Note: Engineering designator is 28LN3UA0338)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.239 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (RF Out)
Bond Pad #3 (Vd)
Bond Pad #4 (Vd)
Bias Arrangement
Bypass Capacitors - See App Note [2]
RF In
2
1
RF Out
RF Out
RF In
XL1000-BD
4
3
Vd
Vd
Page 5 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 18-Jan-10
L1000-BD
App Note [1] Biasing - As shown in the bonding diagram, this device operates
using a self-biased architecture and only requires one drain bias. Bias is
nominally Vd=3V, I=35mA or Vd=5V, I=50mA.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC
bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband.The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of device placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
XL1000-BD Vd=5.0 V, Id=50 mA
XL1000-BD Vd=5.0 V, Id=50 mA
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
1.0E+15
1.0E+14
1.0E+13
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
XL1000-BD Vd=5.0 V, Id=50 mA
XL1000-BD Vd=5.0 V, Id=50 mA
150
140
130
120
110
100
90
58
57
56
55
54
53
52
51
50
49
48
47
46
80
70
60
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
Page 6 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-40.0 GHz GaAs MMIC
Low Noise Amplifier
January 2010 - Rev 18-Jan-10
L1000-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be discarded in accordance
with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
Description
XL1000-BD-000V
XL1000-BD-EV1
RoHS compliant die packed in vacuum release gel paks
XL1000 die evaluation module
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Page 7 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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