XP1020-BD-000V [MIMIX]
11.0-19.0 GHz GaAs MMIC Power Amplifier; 11.0-19.0 GHz的砷化镓MMIC功率放大器
| 型号： | XP1020-BD-000V |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 11.0-19.0 GHz GaAs MMIC Power Amplifier |
| 文件： | 总6页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
P1020-BD
Features
Chip Device Layout
Compact, Low Cost Design
20.0 dB Small Signal Gain
+27.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
XP1020-BD
General Description
Mimix Broadband’s two stage 11.0-19.0 GHz GaAs
MMIC power amplifier has a small signal gain of
20.0 dB with a +27.0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
+9.0 VDC
500 mA
+0.3 VDC
+17.0 dBm
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
1
1
Channel Temperature (Tch) MTTF Table
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
Min.
11.0
-
-
-
-
-
-
Typ.
-
12.0
8.0
20.0
+/-1.0
40.0
+27.0
+5.0
-0.9
Max.
19.0
-
-
-
-
-
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
-
-
-1.0
-
+8.0
0.1
420
Supply Current (Id) (Vd=5.0V,Vg=-0.9V Typical)
380
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
P1020-BD
Power Amplifier Measurements @Tamb=25ºC
DB(|S (1, 1) |)
AllS ources
Small Signal Parameters
22
S11
0
20
-1
S21
18
16
14
12
10
8
-2
-3
-4
-5
-6
6
-7
4
-8
2
-9
0
-10
-11
-12
-13
-14
-15
-16
-17
-18
-19
-20
-2
-4
-6
S22
-8
-10
-12
-14
-16
-18
-20
S11
5
7
9
11
13
15
17
19
21
23
25
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency (GHz)
Fr equency ( G Hz)
DB(|S (1, 2) |)
AllS ources
DB(|S (2, 1) |)
AllS ources
S21
S12
25
20
0
-10
-20
-30
-40
-50
-60
-70
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency (GHz)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency (GHz)
DB(|S(2, 2) |)
AllS ources
S22
XP1020-BD: Pout (d Bm) vs . f req (GHz ) Vgs= -0.5 Vds =5 V Pin = +10 dBm
22
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency (GHz)
11
12
13
14
15
16
17
18
19
20
freq (GHz)
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
P1020-BD
0.600
1.000
Mechanical Drawing
(0.023)
(0.039)
1.100
(0.043)
2
3
0.731
1
(0.028)
XP1020-BD
0.294
(0.012)
4
5
0.0
0.659
1.400
(0.055)
0.0
(0.026)
(Note: Engineering designator is 15MPA0566)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.810 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg)
Bias Arrangement
Vd1,2
Bypass Capacitors - See App Note [2]
2
3
1
RF In
XP1020-BD
4
RF Out
5
Vg
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
P1020-BD
App Note [1] Biasing - It is recommended to bias each amplifier stage Vd(1,2)=5.0V with Id=380mA. It is also recommended to use
active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results.
Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT
is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.9V.Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
All the drain or gate pad (Vd1,2 and Vg) DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance
(~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.
MTTF Graphs
XP1020-BD Vd=5.0 V, Id=380 mA
XP1020-BD Vd=5.0 V, Id=380 mA
1.00E+09
1.00E+08
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
55
65
75
85
95
105
115
125
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
Baseplate Temperature (deg C)
No RF
Pout=+27 dBm
No RF
Pout=+27 dBm
XP1020-BD Vd=5.0 V, Id=380 mA
XP1020-BD Vd=5.0 V, Id=380 mA
80
78
76
74
72
70
68
66
64
62
60
58
56
54
52
50
48
46
44
42
40
275
250
225
200
175
150
125
55
65
75
85
95
105
115
125
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
Baseplate Temperature (deg C)
No RF
Pout=+27 dBm
No RF
Pout=+27 dBm
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
P1020-BD
Device Schematic
Typical Application
XU1005
CMM1118
XP1020
Sideband
Reject
RF Out
14.2-15.35 GHz
IF IN
2.0 GHz
LO(+6.0dBm)
12.2-13.35 GHz (USB Operation)
16.2-17.35 GHz (LSB Operation)
Mimix Broadband MMIC-based 11.0-18.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 18.0 GHz)
Mimix Broadband's 11.0-18.0 GHz XU1005 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 16 QAM.The transmitter can be used in upper and lower sideband applications from 11.0-18.0 GHz.
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-19.0 GHz GaAs MMIC
Power Amplifier
January 2007 - Rev 30-Jan-07
P1020-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Part Number for Ordering
Description
XP1020-BD-000V
XP1020-BD-EV1
RoHS compliant die packed in vacuum release gel packs
XP1020-BD evaluation module
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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