XP1043-QH_10 [MIMIX]

12.0-16.0 GHz Power Amplifier; 12.0-16.0 GHz功率放大器
XP1043-QH_10
型号: XP1043-QH_10
厂家: MIMIX BROADBAND    MIMIX BROADBAND
描述:

12.0-16.0 GHz Power Amplifier
12.0-16.0 GHz功率放大器

放大器 功率放大器
文件: 总7页 (文件大小:840K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
Features  
32 dBm Saturated RF Power  
41 dBm Output IP3 Linearity  
17 dB Gain Control  
On-Chip Power Detector  
4x4mm Standard QFN Package  
100% RF Testing  
General Description  
Absolute Maximum Ratings1  
The XP1043-QH is a packaged linear power amplifier that  
operates over the 12.0-16.0 GHz frequency band. The  
device provides 21.5 dB gain and 41 dBm Output Third  
Order Intercept Point (OIP3) across the band and is offered  
in an industry standard, fully molded 4x4mm QFN package.  
The packaged amplifier is comprised of a three stage  
power amplifier with an integrated, temperature  
Supply Voltage (Vd1,2,3)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Max Power Dissipation (Pdiss)  
RF Input Power  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Channel Temperature (Tch)  
MSL Level (MSL)  
+8.0V  
1500 mA  
-2.4V  
5.5W  
+19 dBm  
-55 to +85 ºC  
-65 to +150 ºC  
165 ºC  
compensated on-chip power detector. The device includes  
on-chip ESD protection structures and DC by-pass  
capacitors to ease the implementation and volume  
assembly of the packaged part. The device is  
manufactured in GaAs PHEMT device technology with BCB  
wafer coating to enhance ruggedness and repeatability of  
performance. XP1043-QH is well suited for Point-to-Point  
Radio, LMDS, SATCOM and VSAT applications.  
MSL3  
ESD Min. - Machine Model (MM)  
Class A  
ESD Min. - Human Body Model (HBM) Class 1A  
(1) Minimum specifications are set under nominal (typ.) bias conditions.  
Bias can be adjusted higher to achieve greater linearity and power;  
however, maximum total power dissipated is specified at 5.5 W  
(2) Channel temperature directly affects a device’s MTTF. Channel  
temperature should be kept as low as possible to maximize lifetime.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Min.1  
12.0  
19.0  
10.0  
10.0  
Typ.  
-
Max.  
16.0  
Parameter  
Frequency Range (f)  
Units  
GHz  
dB  
dB  
dB  
Small Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Reverse Isolation (S12)  
P1dB  
21.5  
15.0  
10.0  
55.0  
30.0  
32.0  
41.0  
37.0  
7.0  
dB  
dBm  
dBm  
dBm  
dB  
VDC  
VDC  
VDC  
mA  
mA  
mA  
Psat  
31.0  
40.0  
-
OIP3 at Pout = 18 dBm per Tone  
Power Detector Range  
Drain Bias Voltage (Vd1,2,3)  
Detector Bias Voltage (Vdet,ref)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1)  
Supply Current (Id2)  
Supply Current (Id3)  
-
7.0  
5.0  
-2  
-1.0  
100  
200  
400  
0.0  
200  
400  
800  
(1) Note: Minimum specifications are set under nominal (typ.) bias conditions.  
Bias can be adjusted higher to achieve greater linearity and power.  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
Power Amplifier Measurements  
XP1043-QH: Pout (dBm) vs Pin (dBm) at Room Temp.  
Vd = 7 V, Iq = 700mA  
XP1043-QH: S-parameters (dB) vs. Freq (GHz),  
(VDD=7V, ID1=100mA, ID2=200mA, ID3=400mA)  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
30  
25  
20  
15  
10  
5
S21  
Pout, Freq = 12.5 GHz  
Pout, Freq = 13.0 GHz  
Pout, Freq = 13.5 GHz  
Pout, Freq = 14.0 GHz  
Pout, Freq = 14.5 GHz  
Pout, Freq = 15.0 GHz  
Pout, Freq = 15.5 GHz  
S11  
S22  
0
-5  
-10  
-15  
-20  
-25  
10  
11  
12  
13  
14  
15  
16  
17  
18  
-10 -8 -6 -4 -2  
0
2
4
6
8
10 12 14 16 18 20 22  
Freq (GHz)  
Input Power (dBm)  
XP1043-QH: V_Detect (mV) vs Output Power (dBm)  
Freq = 12.5-15.5 GHz, Temp = -45 to 85 Degree C  
XP1043-QH: Pout (dBm) vs Pin (dBm) at +85 °C.  
Vd = 7 V, Iq = 700mA  
10000  
1000  
100  
12.5GHz, 25C  
15.5GHz, 25C  
12.5GHz, -45C  
15.5GHz, -45C  
12.5GHz, 85C  
15.5GHz, 85C  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
Pout, Freq = 12.5 GHz  
Pout, Freq = 13.0 GHz  
Pout, Freq = 13.5 GHz  
Pout, Freq = 14.0 GHz  
Pout, Freq = 14.5 GHz  
Pout, Freq = 15.0 GHz  
Pout, Freq = 15.5 GHz  
-10 -8 -6 -4 -2  
0
2
4
6
8
10 12 14 16 18 20 22  
10  
Input Power (dBm)  
0
3
6
9
12  
15  
18  
21  
24  
27  
Output Power (dBm)  
XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at Room Temp.  
Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz  
XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at at +85 °C.  
Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
CI3, Freq = 12.5 GHz, Temp = 85 C  
CI3, Freq = 13.5 GHz, Temp = 85 C  
CI3, Freq = 14.5 GHz, Temp = 85 C  
CI3, Freq = 15.5 GHz, Temp = 85 c  
CI3, Freq = 12.5 GHz, Temp = 35 C  
CI3, Freq = 13.5 GHz, Temp = 35 C  
CI3, Freq = 14.5 GHz, Temp = 35 C  
CI3, Freq = 15.5 GHz, Temp = 35 C  
0
0
14  
15  
16  
17  
18  
19  
20  
21  
22  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Output Power (dBm per tone)  
Output Power (dBm per tone)  
Page 2 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
MTTF  
These numbers were calculated based on accelerated life test information and thermal model analysis received from  
the fabricating foundry.  
XP1043-QH-0G00: MTTF hours vs Package Base Temperature  
Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA  
1.0E+14  
1.0E+13  
1.0E+12  
1.0E+11  
1.0E+10  
1.0E+09  
1.0E+08  
1.0E+07  
1.0E+06  
1.0E+05  
1.0E+04  
1.0E+03  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120 130  
Package Base Temp (°C)  
XP1043-QH-0G00: Tch vs Package Base Temperature  
Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA  
225  
200  
175  
150  
125  
100  
75  
50  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
120  
130  
Package Base Temp (°C)  
XP1043-QH-0N00: Operating Power De-rating Curve (continuous)  
6
5
4
3
2
1
0
25  
50  
75  
100  
125  
150  
175  
Package Base Temp (ºC)  
Page 3 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
Package Dimensions / Layout  
Functional Schematic  
Pin Designations  
nc GND GND VD1 VD2 VD3  
Pin Number Pin Name Pin Function Nominal Value  
1-2  
3
4
5-6  
7
8
9
10  
11  
GND  
nc  
Ground  
Not Connected  
RF Input  
GND  
GND  
RF In  
GND  
VG1  
VG2  
VG3  
nc  
Ground  
GND  
~ -1.0V  
~ -1.0V  
~ -1.0V  
GND  
1
2
3
4
5
6
18  
17  
16  
15  
14  
13  
GND  
GND  
nc  
GND  
GND  
nc  
Gate 1 Bias  
Gate 2 Bias  
Gate 3 Bias  
Not Connected  
Pwr Det  
Vdet  
5.0V  
12  
13-14  
15  
16  
17-18  
19  
20  
21  
22-23  
24  
Vref Pwr Det Reference  
5.0V  
GND  
nc  
RF Out  
nc  
GND  
VD3  
VD2  
VD1  
GND  
nc  
Not Connected  
RF Output  
Not Connected  
Ground  
RF IN  
GND  
GND  
RF OUT  
nc  
GND  
GND  
7.0V, 400 mA  
7.0V, 200 mA  
7.0V, 100 mA  
GND  
Drain 3 Bias  
Drain 2 Bias  
Drain 1 Bias  
Ground  
nc  
Not Connected  
GND  
VG1 VG2 VG3  
nc Vdet Vref  
Page 4 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated under the nominal bias conditions of VD1,2,3 at 7.0V with  
100, 200, 400mA respectively.The device can also be safely biased to a maximum of 9 V and 1.4 A to provide greater than 2 Watts of saturated RF  
power. It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Under  
heavy RF saturation the device will tend to self bias and pull the desired drain current. Depending on the supply voltage available and the power  
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the  
drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical  
gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the  
positive drain supply.  
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as  
possible, with additional 10µF decoupling caps.  
App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by providing +5V bias and measuring the  
difference in output voltage with standard op-amp in a differential mode configuration.  
Bias Circuit  
R
To Gate  
The output impedance of the bias circuit’s gate output should be  
small.When in saturation, the gates of the XP1043-QH can draw  
several mA which may cause adverse affects in a gate circuit with  
high output impedance. It is recommended that an Emitter  
Follower circuit be used (shown above), which follows the bias  
circuit’s gate output.This will result in a high-input impedance,  
low-output impedance buffer between the gate output of the  
bias circuit and the gate input of the XP1043-QH.  
From Bias  
Circuit  
-5V  
Emitter Follower placed between the  
(gate) output of the bias circuit MMIC gate  
Page 5 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
Recommended Layout  
Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805  
Page 6 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the  
environment. For safety, observe the following procedures:  
• Do not ingest.  
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these  
by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
• Observe government laws and company regulations when discarding this product.This product must be discarded in  
accordance with methods specified by applicable hazardous waste procedures.  
Electrostatic Sensitive Device -  
Observe all necessary precautions when handling.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or  
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life  
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain  
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or  
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible  
with high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place this  
part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground  
connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and  
life of the product due to thermal stress.  
Typical Reflow Profiles  
Reflow Profile  
SnPb  
Pb Free  
Ramp Up Rate  
3-4 ºC/sec  
60-120 sec @ 140-160 ºC  
60-150 sec  
240 ºC  
3-4 ºC/sec  
Activation Time and Temperature  
Time Above Melting Point  
Max Peak Temperature  
Time Within 5 ºC of Peak  
Ramp Down Rate  
60-180 sec @ 170-200 ºC  
60-150 sec  
265 ºC  
10-20 sec  
10-20 sec  
4-6 ºC/sec  
4-6 ºC/sec  
Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental  
requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant  
components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is  
100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as  
well as higher temperature (260°C reflow) “Pb Free” processes.  
Ordering Information  
Part Number for Ordering  
XP1043-QH-0G00  
Description  
Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in bulk quantity  
Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in tape and reel  
XP1043-QH evaluation board  
XP1043-QH-0G0T  
XP1043-QH-EV1  
Caution: ESD Sensitive  
Appropriate precautions in handling, packaging  
and testing devices must be observed.  
Proper ESD procedures should be followed when handling this device.  
Page 7 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

相关型号:

XP1043-QH_15

Power Amplifier
TE

XP1044-QL

4.9-5.9 GHz 3W Power Amplifier Module
MIMIX

XP1044-QL-0N00

4.9-5.9 GHz 3W Power Amplifier Module
MIMIX

XP1044-QL-EV1

4.9-5.9 GHz 3W Power Amplifier Module
MIMIX

XP1044-QL_10

3W Power Amplifier ModuleMarch
MIMIX

XP1048-QJ

3.3-3.8 GHz HFET 3W Linear Power Amplifier
MIMIX

XP1048-QJ-0G00

Narrow Band High Power Amplifier, 3300MHz Min, 3800MHz Max, 6 X 6 MM, ROHS COMPLIANT, PLASTIC, QFN-24
MIMIX

XP1048-QJ-0G0T

Narrow Band High Power Amplifier, 3300MHz Min, 3800MHz Max, 6 X 6 MM, ROHS COMPLIANT, PLASTIC, QFN-24
MIMIX

XP1050-QJ

7.0-9.0 GHz Linear Power Amplifier 6x6mm QFN
MIMIX

XP1050-QJ-0G00

7.0-9.0 GHz Linear Power Amplifier 6x6mm QFN
MIMIX

XP1050-QJ-0G0T

7.0-9.0 GHz Linear Power Amplifier 6x6mm QFN
MIMIX

XP1050-QJ-EV1

7.0-9.0 GHz Linear Power Amplifier 6x6mm QFN
MIMIX