XR1001-BD [MIMIX]
33.0-40.0 GHz GaAs MMIC Receiver; 33.0-40.0 GHz的砷化镓MMIC接收器
| 型号： | XR1001-BD |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 33.0-40.0 GHz GaAs MMIC Receiver |
| 文件： | 总8页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
R1001-BD
Features
Chip Device Layout
Sub-Harmonic Receiver
9.0 dB Conversion Gain
4.0 dB Noise Figure
12.0 dB Image Rejection
R1001
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC receiver has a small
signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0
dB image rejection across the band.The device is a two stage LNA
followed by a pair of sub-harmonic mixers, configured to form an image
reject mixer which requires an LO at 15.5-21.5 GHz.The image reject
mixer eliminates the need for a bandpass filter after the LNA to remove
thermal noise at the image frequency.The use of a sub-harmonic mixer
makes the provision of the LO easier than for fundamental mixers at
these frequencies. I and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired sideband.This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity.The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process.This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+6.0 VDC
Supply Current (Id)
70 mA
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+0.3 VDC
0 dBm
-65 to +165 OC
3
-55 to MTTF Table
3
MTTF Table
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25o C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Units
GHz
GHz
GHz
GHz
dB
Min.
34.0
33.0
15.5
DC
Typ.
-
-
-
-
18.0
9.0/9.0
+12.0
Max.
40.0
40.0
21.5
3.0
-
-
-
2
Small Signal Conversion Gain RF/IF (S21) (USB/LSB)
LO Input Drive (PLO)
dB
3.0/3.0
+10.0
10.0/6.0 14.0/12.0
dBm
dBc
dB
+14.0
2
Image Rejection (USB/LSB)
-
-
-
Noise Figure (NF)
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)
-
-
-
4.0
45.0
-13.0
+3.0
-0.5
30
dB
1
dBm
VDC
VDC
mA
-
-
-1.0
-
+5.5
0.0
60
(1) Measured using constant current.
(2) Min/Max limits over 33.0-39.5 GHz
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
R1001-BD
Receiver Measurements
XR1001-BD Vd=3.0 V, Id=30 mA, USB
XR1001-BD Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
14
14
12
10
8
12
10
8
6
6
4
4
2
2
0
0
35
36
37
38
39
40
41
35
36
37
38
39
40
41
RF Frequency (GHz)
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Max
Median
Mean
-3sigma
XR1001-BD Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
XR1001-BD Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~560 Devices
0
-2
0
-2
-4
-4
-6
-6
-8
-8
-10
-12
-14
-16
-18
-20
-10
-12
-14
-16
-18
-20
35
36
37
38
39
40
41
35
36
37
38
39
40
41
Frequency (GHz)
RF Frequency (GHz)
+3sigma
Max
Median
Mean
-3sigma
Max
Median
Mean
-3sigma
XR1001-BD Vd=3.0 V Id=30 mA
XR1001-BD Vd=3.0 V Id=30 mA
0
5.00
4.00
3.00
2.00
1.00
0.00
-5
-10
-15
-20
-25
-30
36.0
36.5
37.0
37.5
38.0
38.5
39.0
39.5
40.0
36.0
36.5
37.0
37.7
38.0
38.5
39.0
39.5
40.0
Frequency (GHz)
Frequency (GHz)
Page 2 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
R1001-BD
Receiver Measurements (cont.)
XR1001-BD Vd=3.0 V, Id=30 mA, USB
XR1001-BD Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
15
14
13
12
11
10
9
15
14
13
12
11
10
9
8
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
30.5
31.5
32.5
33.5
34.5
RF Frequency (GHz)
Median Mean
35.5
36.5
37.5
38.5
39.5
40.5
30.5
31.5
32.5
33.5
34.5
RF Frequency (GHz)
Median Mean
35.5
36.5
37.5
38.5
39.5
40.5
Max
-3sigma
Max
-3sigma
XR1001-BD Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
XR1001-BD Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
-5
0
-5
-10
-15
-20
-25
-10
-15
-20
-25
30.5
31.5
32.5
33.5
34.5
RF Frequency (GHz)
Median Mean
35.5
36.5
37.5
38.5
39.5
40.5
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Frequency (GHz)
Max
-3sigma
Max
Median
Mean
-3sigma
XR1001-BD Vd=3.0 V, Id=30 mA, USB/LSB
LO=+12.0 dBm, IF=1.0 GHz, RF=-20.0 dBm, ~180 Devices
0
-5
-10
-15
-20
-25
30.5
31.5
32.5
33.5
34.5
RF Frequency (GHz)
Median Mean
35.5
36.5
37.5
38.5
39.5
40.5
Max
-3sigma
Page 3 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
R1001-BD
0.541
1.143
(0.045)
Mechanical Drawing
(0.021)
2.500
(0.099)
2
3
R1001
1.285
1
(0.051)
0.315
(0.012)
4
5
6
0.0
0.541
1.143
2.900
0.0
(0.021)
(0.045)
(0.114)
(Note: Engineering designator is 38REC_01B2)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.500 mg.
Bond Pad #1 (RF)
Bond Pad #2 (IF2)
Bond Pad #3 (IF1)
Bond Pad #4 (LO)
Bond Pad #5 (Vd)
Bond Pad #6 (Vg)
Bypass Capacitors - See App Note [2]
Bias Arrangement
IF1
IF2
IF2
IF1
2
3
R1001
RF
1
XR1001-BD
RF
LO
4
LO
5
6
Vg
Vd
Vg
Vd
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
R1001-BD
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with both stages in parallel,
and can be biased for low noise performance or high power performance. Low noise bias is nominally
Vd=3V, Id=30mA and is the recommended bias condition. Power bias may be as high as Vd=5.5V, Id=60mA.
It is also recommended to use active biasing to keep the currents constant as the RF power and temperature
vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do
this is -0.5V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
Note: RF and IF ports are AC coupled (DC blocks on chip), LO port is DC coupled (no DC block on chip.)
MTTFTables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Channel
Rth
MTTF Hours
FITs
Temperature
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
84 deg Celsius
104 deg Celsius
124 deg Celsius
-
7.63E+11
4.79E+10
3.95E+09
1.31E-03
2.09E-02
2.53E-01
318.0° C/W
-
Bias Conditions: Vd=3.0V, Id=30 mA
Backplate
Channel
Rth
MTTF Hours
FITs
Temperature
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
159 deg Celsius
179 deg Celsius
199 deg Celsius
-
1.39E+08
2.09E+07
3.67E+06
7.18E+00
4.79E+01
2.72E+02
314.8° C/W
-
Bias Conditions: Vd=5.5V, Id=60 mA
Page 5 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
R1001-BD
App Note [3] USB/LSB Selection -
LSB
USB
For Upper Side Band operation (USB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (90º)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (90º)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
IF2
IF1
An alternate method of Selection of USB or LSB:
LSB
In Phase Combiner
-90o
USB
In Phase Combiner
-90o
IF2
IF1
IF2
IF1
Page 6 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
Typical Application
XR1001-BD
R1001-BD
BPF
IF Out
2 GHz
LNA
IR Mixer
Coupler
RF IN
37.0-39.5 GHz
AGC Control
LO(+12dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 33.0-40.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 40 GHz)
Also See: Multiplier selection guide at www.mimixbroadband.com for multipliers that can be used
to drive the XR1001-BD.
Page 7 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Receiver
April 2007 - Rev 19-Apr-07
R1001-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be discarded in accordance
with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XR1001-BD-000V
XR1001-BD-000W
Description
Where“V”is RoHS compliant die packed in vacuum release gel paks
Where“W”is RoHS compliant die packed in waffle trays
XR1001 die evaluation module
XR1001-BD-EV1
Page 8 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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