XX1001-BD [MIMIX]
18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier; 18.0-21.0 / 36.0-42.0 GHz的砷化镓MMIC倍频器和功率放大器
| 型号： | XX1001-BD |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier |
| 文件： | 总6页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
January 2007 - Rev 26-Jan-07
X1001-BD
Features
Chip Device Layout
Integrated Doubler and Power Amplifier
Excellent Saturated Output Stage
+26.0 dBm Output Power
50.0 dBc Fundamental Suppression
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC
doubler integrates a doubler and 4-stage power amplifier.
The device provides better than +26.0 dBm output power
and has excellent fundamental rejection.This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography
to ensure high repeatability and uniformity.The chip has
surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process.This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
+6.0 VDC
800 mA
+0.3 VDC
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
1
1
Channel Temperature (Tch) MTTF Table
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Rejection
Units
GHz
GHz
dB
Min.
18.0
36.0
Typ.
-
-
TBD
12.0
50.0
0.0
+26.0
2.5
3.0
4.5
-1.2
<1.0
20
Max.
21.0
42.0
-
-
-
-
-
3.0
4.0
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dBc
dBm
dBm
V
V
V
RF Input Power (RF Pin)
Output Power at 0.0 dBm Pin (Pout)
Drain Supply Voltage (Vd1) Doubler
Drain Supply Voltage (Vd2) Buffer Amp
Drain Supply Voltage (Vd3,4,5,6) PA
Gate Supply Voltage (Vg1) Doubler
Drain Supply Current (Id1) Doubler
Drain Supply Current (Id2) Buffer
Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) PA
V
mA
mA
mA
-
25
600
530
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
January 2007 - Rev 26-Jan-07
X1001-BD
Power Amplifier Measurements
Vdx2=2.5 V, Vdbuff=3 V I db=30 mA, V dPA =4.5 V I dPA =520 mA
VdX2=2.5 V , Vd B=3 V,Vd PA =4.5 V, P in= +2..+9 d Bm
35
30
25
30
25
20
20
P out @ 2 f
in
15
15
10
10
5
5
0
0
-5
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-10
-15
-20
-25
-30
-35
-40
-45
-50
P out @ f
in
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10
37
37.5
38
38.5
39
39.5
40
Input power (dBm) at fin
VdX2=2.5V, VdB=3 V, VdPA=4.5 V @ P in=0..+10 dBm
37-40 GHz
Output frequency (GHz)
VdX2=2.5V, V dB=3 V, VdPA=4.5 V @ P in=0..+10 dBm
P in=+10 dB m
35
30
25
20
15
10
35
30
25
20
15
P in=0 dBm
37.5
0
2
4
6
8
10
37.0
38.0
38.5
39.0
39.5
40.0
Inputpower @ fin (G Hz)
Output frequency (G Hz)
Vdx2=2.5 V , Vdbuff =3 V I db=30 mA , V dPA =4.5 V IdPA=520 mA
Vdx2=2.5 V, Vdbuff=3 V I db=30 mA, VdPA=4.5 V I dPA =520 mA
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
0629, RC =R 10C 12, R F freq (G Hz)=37
0629, RC =R 10C 12, R F freq (G Hz)=38
0629, RC =R 10C 12, R F freq (G Hz)=39
0629, RC =R 10C 12, R F freq (G Hz)=40
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10
Input power (dBm) at f in
Input power (dBm) at fin
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
January 2007 - Rev 26-Jan-07
X1001-BD
Mechanical Drawing
0.295
0.694
1.095
2.705
1.494
2.096
(0.012)
(0.027)
(0.043)
(0.107)
(0.059)
(0.083)
1.700
(0.067)
2
7
3
4
5
6
0.605
1
(0.024)
0.638
8
(0.025)
14
13
12
11
10
9
0.0
0.295
0.695
1.095
1.495
2.096
2.503
(0.099)
3.000
(0.118)
0.0
(0.012)
(0.027)
(0.043)
(0.059)
(0.083)
(Note: Engineering designator is 20DBL0629)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.987 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg2)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vd3)
Bond Pad #5 (Vd4)
Bond Pad #6 (Vd5)
Bond Pad #7 (Vd6)
Bond Pad #8 (RF Out)
Bond Pad #9 (Vg6)
Bond Pad #10 (Vg5)
Bond Pad #11 Vg4)
Bond Pad #12 (Vg3)
Bond Pad #13 (Vd1)
Bond Pad #14 (Vg1)
Bypass Capacitors - See App Note [2]
Bias Arrangement
Vd3,4,5
Vd2
Vd6
Vg2
2
7
3
4
5
6
RF In
1
8
RF Out
14
13
12
11
10
9
Vg1
Vg6
Vd1
Vg3,4,5
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
January 2007 - Rev 26-Jan-07
X1001-BD
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd6 at Vd1=2.5V,Vd2=3.0V,Vd(3,4,5,6)=4.5V with
Id1<1mA, Id2=20mA, Id3=40mA, Id4=70mA, Id5=150mA, Id6=270mA. Separate biasing is recommended if the amplifier is to be used at high levels
of saturation, where gate rectification will alter the effective gate control voltage. As shown in the bonding diagram, it is possible to parallel stages
Vd(3,4,5) with Id(3,4,5)=260mA while maintaining satisfactory performance. For non-critical applications it is possible to parallel stages Vd(3,4,5,6)
together and adjust the common gate voltage Vg(3,4,5,6) for total drain current Id(total)=530mA. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage. The typical gate voltage needed to do this is -0.7V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also,
make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain pad DC bypass capacitors
(~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are
tied together) of DC bias pads.Vd(3,4,5,6) or Vg(3,4,5,6) have been tied together but can be left open.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4,5,6 and Vg1,2,3,4,5,6) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
XX1001-BD, MTTF (yrs) vs. Backplate Temperature (°C)
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
55
65
75
85
95
Temperature (°C)
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
January 2007 - Rev 26-Jan-07
X1001-BD
Device Schematic
VG2
VD2
VD3
V D4
VD5
V D6
VD
VD
VG
VD
VD
VD
VD
X2
AMP
AMP
AMP
AMP
AMP
RFin
RFout
VG
VG
VG
VG
VG
VG1
VD1
VG3
VG4
VG5
VG6
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
January 2007 - Rev 26-Jan-07
X1001-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be discarded in accordance
with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided).The work station
temperature should be 310º C +/- 10º C. Exposure to these extreme temperatures should be kept to minimum.The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XX1001-BD-000V
XX1001-BD-000W
XX1001-BD-EV1
Description
“V”- vacuum release gel paks
“W”- waffle trays
XX1001 die evaluation module
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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