2KERA-5SM+T [MINI]

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, ROHS COMPLIANT, CASE WW107, MICRO-X, 4 PIN;
2KERA-5SM+T
型号: 2KERA-5SM+T
厂家: MINI-CIRCUITS    MINI-CIRCUITS
描述:

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, ROHS COMPLIANT, CASE WW107, MICRO-X, 4 PIN

射频 微波
文件: 总4页 (文件大小:122K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Surface Mount  
Monolithic Amplifier DC-4 GHz  
Product Features  
• DC-4 GHz  
• Single Voltage Supply  
• Internally matched to 50 Ohm  
• Unconditionally Stable  
• Low Performance Variation Over Temperature  
Transient protected  
• Aqueous washable  
• Protected by US Patent 6,943,629  
ERA-5SM+  
PRICE: $3.90 ea. QTY. (30)  
CASE STYLE: WW107  
+ RoHS compliant in accordance  
with EU Directive (2002/95/EC)  
• Cellular/ PCS/ 3G Base Station  
The +Suffix has been added in order to identify RoHS  
Typical Applications  
• CATV, Cable Modem & DBS  
• Fixed Wireless & WLAN  
Compliance. See our web site for RoHS Compliance  
methodologies and qualifications.  
• Microwave Radio & Test Equipment  
General Description  
ERA-5SM+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable per-  
formance from lot to lot. It is enclosed in an Micro-X package. ERA-5SM+ uses Darlington configuration  
and is fabricated using InGaP HBT technology. Expected MTBF is 850 years at 85°C case temperature.  
simplified schematic and pin description  
RF-OUT and DC-IN  
RF-OUT and DC-IN  
RF IN  
GND  
GND  
RF IN  
GROUND  
Function  
Pin Number  
Description  
RF input pin. This pin requires the use of an external DC blocking capacitor chosen  
for the frequency of operation.  
RF IN  
1
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking  
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias  
without loss of RF signal due to the bias connection, as shown in “Recommended  
Application Circuit”.  
RF-OUT and DC-IN  
GND  
3
Connections to ground. Use via holes as shown in “Suggested Layout for PCB  
Design” to reduce ground path inductance for best performance.  
2,4  
W
E
N
L
®
L
A
minicircuits.com  
Mini-Circuits  
ISO 9001 ISO 14001 CERTIFIED  
Rev. P  
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site  
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com  
RF/IF MICROWAVE COMPONENTS  
M117811  
ERA-5SM+  
080516  
Page 1 of 4  
Monolithic InGaP HBT MMIC Amplifier  
ERA-5SM+  
Electrical Specifications at 25°C and 65mA, unless noted  
Parameter  
Frequency Range*  
Gain  
Min.  
DC  
19  
Typ.  
Max.  
4
Units  
GHz  
dB  
Cpk  
f=0.1GHz  
f=1 GHz  
f=2 GHz  
f=3 GHz  
f=4 GHz  
20.2  
19.5  
17.6  
15.6  
14  
22  
>1.5  
16  
12  
19  
16  
Magnitude of Gain Variation versus Temperature  
(values are negative)  
f=0.1GHz  
f=1 GHz  
f=2 GHz  
f=3 GHz  
f=4 GHz  
.0025  
.0034  
.0043  
.0052  
.0065  
.005  
.007  
.0085  
.0105  
.013  
dB/°C  
Input Return Loss  
Output Return Loss  
f=0.1 GHz  
f=2 GHz  
f=4 GHz  
21  
23  
21  
dB  
dB  
f=0.1 GHz  
f=2 GHz  
f=4 GHz  
30  
26  
17  
Reverse Isolation  
f=2 GHz  
19  
22  
dB  
Output Power @1 dB compression  
f=0.1 GHz  
f=1 GHz  
f=2 GHz  
f=4 GHz  
16.5  
16.5  
15.5  
18.4  
18.4  
17  
dBm  
>1.5  
12.5  
Saturated Output Power  
(at 3dB compression)  
f=0.1 GHz  
f=1 GHz  
f=2 GHz  
19.5  
18.5  
18  
dBm  
dBm  
Output IP3  
f=0.1 GHz  
f=1 GHz  
f=2 GHz  
f=4 GHz  
30  
30  
26  
33  
33  
30  
26  
>1.5  
>1.5  
Noise Figure  
f=0.1GHz  
f=2 GHz  
f=4 GHz  
3.5  
3.5  
3.5  
4.5  
4.5  
4.5  
dB  
Group Delay  
f=2 GHz  
90  
65  
psec  
mA  
Recommended Device Operating Current  
Device Operating Voltage  
4.5  
4.9  
-3.2  
6.9  
133  
5.3  
V
>1.5  
Device Voltage Variation vs. Temperature at 65mA  
Device Voltage Variation vs. Current at 25°C  
Thermal Resistance, junction-to-case1  
mV/°C  
mV/mA  
°C/W  
*Guaranteed specification DC-4 GHz. Low frequency cut off determined by external coupling capacitors.  
Absolute Maximum Ratings  
Parameter  
Ratings  
-45°C to 85°C  
-65°C to 150°C  
85mA  
Operating Temperature*  
Storage Temperature  
Operating Current  
Power Dissipation  
Input Power  
451mW  
13 dBm  
Note: Permanent damage may occur if any of these limits are exceeded.  
These ratings are not intended for continuous normal operation.  
1Case is defined as ground leads.  
*Based on typical case temperature rise 10°C above ambient.  
W
E
N
L
®
L
A
minicircuits.com  
Mini-Circuits  
ISO 9001 ISO 14001 CERTIFIED  
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site  
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com  
RF/IF MICROWAVE COMPONENTS  
Page 2 of 4  
Monolithic InGaP HBT MMIC Amplifier  
Product Marking  
ERA-5SM+  
E5  
Additional Detailed Technical Information  
Additional information is available on our web site. To access this information enter the model number on  
our web site home page.  
Performance data, graphs, s-parameter data set (.zip file)  
Case Style: WW107  
Plastic micro-x, .085 body diameter, lead finish: tin/silver/nickel  
Tape & Reel: F4  
Suggested Layout for PCB Design: PL-075  
Evaluation Board: TB-408-5+  
Environmental Ratings: ENV08T2  
Recommended Application Circuit  
R BIAS  
“1%” Res. Values (ohms)  
Vcc  
Rbias (Required)  
Vcc  
for Optimum Biasing  
Cbypass  
7
8
9
33.2  
48.7  
63.4  
78.7  
95.3  
110  
124  
140  
158  
174  
187  
205  
221  
232  
Ibias  
4
RFC (Optional)  
Cblock  
3
IN  
OUT  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
Vd  
1
Cblock  
2
Test Board includes case, connectors, and components (in bold) soldered to PCB  
W
E
N
L
®
L
A
minicircuits.com  
Mini-Circuits  
ISO 9001 ISO 14001 CERTIFIED  
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site  
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com  
RF/IF MICROWAVE COMPONENTS  
Page 3 of 4  
Monolithic InGaP HBT MMIC Amplifier  
ESD Rating  
ERA-5SM+  
Human Body Model (HBM): Class 1B (500 v to < 1,000 v) in accordance with ANSI/ESD STM 5.1 - 2001  
Machine Model (MM): Class M1 (< 100 v) in accordance with ANSI/ESD STM 5.2 - 1999  
MSL Rating  
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020C  
NO. TEST REQUIRED CONDITION  
STANDARD  
QUANTITY  
45 units  
Low Power Microscope  
Magnification 40x  
MIP-IN-0003  
(MCT spec)  
1
2
3
4
Visual Inspection  
Electrical Test  
SAM Analysis  
SCD  
(MCL spec)  
Room Temperature  
45 units  
Less than 10% growth in term of  
delamination  
J-Std-020C  
(Jedec Standard)  
45 units  
Bake at 125°C for 24 hours  
Soak at 85°C/85%RH for 168 hours  
Reflow 3 cycles at 260°C peak  
Moisture Sensitivity  
Level 1  
J-Std-020C  
(Jedec Standard)  
45 units  
MSL Test Flow Chart  
Visual  
Inspection  
Electrical Test  
SAM Analysis  
Start  
Soak  
85°C/85RH  
168 hours  
Reflow 3 cycles,  
260°C  
Bake at 125°C,  
24 hours  
Visual  
Inspection  
Electrical Test  
SAM Analysis  
W
E
N
L
®
L
A
minicircuits.com  
Mini-Circuits  
ISO 9001 ISO 14001 CERTIFIED  
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site  
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com  
RF/IF MICROWAVE COMPONENTS  
Page 4 of 4  

相关型号:

2KERA-5SMT

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, CASE WW107, MICRO-X, 4 PIN
MINI

2KERA-5XSM+T

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, ROHS COMPLIANT, CASE WW107, MICRO-X, 4 PIN
MINI

2KERA-5XSMT

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, CASE WW107, MICRO-X, 4 PIN
MINI

2KERA-5XSMT+

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, CASE WW107, MICRO-X, 4 PIN
MINI

2KG023075JL

SWITCHING DIODE CHIPS
SILAN

2KG026075JL

SWITCHING DIODE CHIPS
SILAN

2KG026075YQ

SWITCHING DIODE CHIPS
SILAN

2KG028075JL

SWITCHING DIODE CHIPS
SILAN

2KG028075YQ

SWITCHING DIODE CHIPS
SILAN

2KG034350JL

SWITCHING DIODE CHIPS
SILAN

2KG037075NJL

COMMON CATHODE DOUBLE DICE SWITCHING DIODE CHIPS
SILAN

2KG037075PJL

COMMON ANODE DOUBLE DICE SWITCHING DIODE CHIPS
SILAN