AVA-183A-DP+ [MINI]

Wide Band Low Power Amplifier,;
AVA-183A-DP+
型号: AVA-183A-DP+
厂家: MINI-CIRCUITS    MINI-CIRCUITS
描述:

Wide Band Low Power Amplifier,

射频 微波
文件: 总6页 (文件大小:317K)
中文:  中文翻译
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Wideband, Microwave  
Monolithic Amplifier Die  
AVA-183A-D+  
50Ω  
5 to 20 GHz  
The Big Deal  
• Ultra-wideband, 5 to 20 GHz  
• Integrated matching, DC blocks, bias circuits  
• Unpackaged die form  
Product Overview  
The AVA-183A-D+ is an ultra-wideband microwave amplifier die fabricated using InGaAs PHEMT  
technology operating over extremely wide frequency range from 5 to 20 GHz. This model integrates the  
entire matching network with the majority of the bias circuit, reducing the need for complicated external  
circuits and simplifying board layouts. These advantages make the AVA-183A-D+ extremely user friendly  
and enable simple, straightforward use.  
Key Features  
Feature  
Advantages  
Very broad frequency range supports a wide array of applications from microwave radio and  
radar to military communications and countermeasures, among others.  
Ultra-wideband, 5 to 20 GHz  
Minimizes the need for external equalizer networks and gain flattening components, making it  
a great fit for instrumentation and EW applications.  
Excellent gain flatness, 1.8 dꢀ  
High isolation, 32 to 43 dꢀ  
Single +5V supply  
With high reverse isolation (20 – 32 dꢀ directivity), the AVA-123A-D+ is an excellent choice  
for buffering broadband circuits. It is an ideal LO driver amplifier and provides designers  
system flexibility and margin when integrating cascaded RF components.  
• No hassle associated with amplifiers using dual supply such as power supply sequencing.  
• Integrated output bias-tee simplifies layout and reduces cost.  
Unpackaged die  
Enables the user to integrate the amplifier directly into hybrids.  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 1 of 6  
Wideband, Microwave  
Monolithic Amplifier Die  
AVA-183A-D+  
Product Features  
• Gain, 13.5 dꢀ typ. & Flatness, 1.8 dꢀ  
• Output Power, up to +19.0 dꢀm typ.  
• Excellent isolation, 39 dꢀ typ. at 12 GHz  
• Single Positive Supply Voltage, 5.0V  
• Integrated DC blocks, ꢀias-Tee & Microwave bypass capacitor  
• Unconditionally Stable  
+RoHS Compliant  
The +Suffix identifies RoHS Compliance. See our web site  
for RoHS Compliance methodologies and qualifications  
Typical Applications  
• Military EW and Radar  
• DꢀS  
Ordering Information: Refer to Last Page  
• Wideband Isolation amplifier  
• Microwave point-to-point radios  
• Satellite systems  
General Description  
The AVA-183A-D+ is a wideband monolithic amplifier die fabricated using InGaAs PHEMT technology with  
outstanding gain flatness up to 20 GHz. It is manufactured using PHEMT technology and is unconditionally  
stable. Its outstanding isolation enables it to be used as a wideband isolation amplifier or buffer amplifier  
in a variety of microwave systems.  
Simplified Schematic and Pad description  
DC  
RF-OUT  
RF-IN  
Function  
RF-IN  
Description  
RF input pad  
RF-OUT  
DC (VD1, VD2)  
GND  
RF output pad  
DC power supply  
Connected to ground  
REV. OR  
M151772  
AVA-183A-D+  
RS/TH/CP  
160915  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 2 of 6  
AVA-183A-D+  
Wideband Monolithic PHEMT MMIC Amplifier  
Electrical Specifications(1) at 25°C, Zo=50Ω, (refer to characterization circuit, Fig.1)  
Parameter  
Condition (GHz)  
Min.  
Typ.  
Max.  
Units  
Frequency Range  
DC Voltage (VD1, VD2  
DC Current (ID1+ID2)  
5.0  
20.0  
GHz  
V
mA  
)
5.0  
131  
11.4  
15.1  
14.5  
13.9  
13.6  
13.5  
12.1  
8.2  
17.2  
12.9  
12.0  
12.2  
12.8  
9.3  
104  
166  
5.0  
8.0  
10.0  
12.0  
14.0  
16.0  
20.0  
5.0  
Gain  
dꢀ  
dꢀ  
8.0  
10.0  
12.0  
14.0  
16.0  
20.0  
5.0  
Input Return Loss  
Output Return Loss  
Output IP3 (2)  
6.2  
8.0  
15.1  
11.8  
10.3  
9.8  
10.0  
12.0  
14.0  
16.0  
20.0  
5.0  
dꢀ  
9.8  
14.8  
25.5  
28.4  
27.0  
25.8  
34.9  
25.2  
27.8  
15.2  
17.9  
18.2  
18.3  
18.9  
19.2  
15.8  
8.0  
4.1  
4.3  
4.8  
5.8  
6.3  
6.2  
25.0  
0.002  
51  
8.0  
10.0  
12.0  
14.0  
16.0  
20.0  
5.0  
dꢀm  
dꢀm  
dꢀ  
8.0  
10.0  
12.0  
14.0  
16.0  
20.0  
5.0  
Output Power @ 1 dꢀ compression  
8.0  
10.0  
12.0  
14.0  
16.0  
20.0  
12  
Noise Figure  
Directivity (Isolation-Gain)  
DC Current Variation vs. Voltage  
Thermal Resistance  
dꢀ  
mA/mV  
°C/W  
(3)  
Absolute Maximum Ratings  
Parameter  
Ratings  
Operating Temperature  
Channel Temperature  
DC Voltage VD1, VD2 Pad (4)  
DC Voltage RF-IN &RF OUT (4)  
Power Dissipation  
-40°C to 85°C  
150°C  
5.5 V  
10 V  
980 mW  
180 mA  
20 dꢀm  
DC Current VD1 & VD2  
Input Power (CW)  
1. Measured on Mini-Circuits Die Characterization test board  
See Characterization Test Circuit (Fig. 1)  
2. At Pout=8 dꢀm/tone  
3. Permanent damage may occur if any of these limits are exceeded.  
These maximum ratings are not intended for continuous normal operation.  
Measured in industry standard 3x3 min 8-lead MCLP package  
4. For continuous operation do not exceed 5.2V  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 3 of 6  
Wideband Monolithic PHEMT MMIC Amplifier  
AVA-183A-D+  
45  
40  
35  
30  
25  
20  
15  
10  
Pout  
-5dBm  
-3dBm  
0dBm  
3dBm  
5dBm  
6dBm  
7dBm  
8dBm  
9dBm  
10dBm  
4000  
6000  
8000 10000 12000 14000 16000 18000 20000  
FREQUENCY (MHz)  
Figure 1: Test Circuit used for characterization. Gain, Return loss, Output power at 1dꢀ compression  
(P1 dꢀ), output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer.  
Conditions:  
1. Gain and Return loss: Pin= -25dꢀm  
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 8 dꢀm/tone at output.  
Die Layout  
Bonding Pad Position  
(Dimensions in µm, Typical)  
Fig 2. Die Layout  
Fig 3. ꢀonding Pad Positions  
Critical Dimensions  
Parameter  
Values  
100  
Die Thickness, µm  
Die Width, µm  
1240  
Die Length, µm  
1240  
ꢀond Pad Size, µm  
80 x 80  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 4 of 6  
AVA-183A-D+  
Wideband Monolithic PHEMT MMIC Amplifier  
Assembly and Handling Procedure  
1. Storage  
Dice should be stored in a dry nitrogen purged desiccators or equivalent.  
2. ESD  
MMIC PHEMT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in  
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta  
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter  
ESD damage to dice.  
3. Die Attach  
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat  
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet  
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s  
cure condition. It is recommended to use antistatic die pick up tools only.  
4. Wire ꢀonding  
ꢀond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond  
pads. Thermosonic bonding is used with minimized ultrasonic content. ꢀond force, time, ultrasonic power and temperature are  
all critical parameters. Suggested wire is pure gold, 1 mil diameter. ꢀonds must be made from the bond pads on the die to  
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due  
to undesirable series inductance.  
Assembly Diagram  
Figure 1 & Assembly Diagram  
VD1 , VD2  
100 pF  
RF-IN  
RF-Out  
Ground  
Recommended Wire Length, Typical  
Wire Length  
(mm)  
Wire Loop Height  
Wire  
(mm)  
0.15  
0.15  
0.15  
RF-In, RF-Out  
VD1, VD2  
Ground  
0.25  
0.50  
0.25  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 5 of 6  
Wideband Monolithic PHEMT MMIC Amplifier  
AVA-183A-D+  
Additional Detailed Technical Information  
additional information is available on our dash board.  
Data Table  
Performance Data  
Case Style  
Swept Graphs  
S-Parameter (S2P Files) Data Set with and without port extension(.zip file)  
Die  
Quantity, Package  
Model No.  
Small, Gel - Pak: 10,50,100 KGD*  
Medium, Partial wafer: KGD*<5K  
Large, Full Wafer  
Available upon request contact sales representative  
AVA-183A-DG+  
AVA-183A-DP+  
AVA-183A-DF+  
Die Ordering and packaging  
information  
Refer to AN-60-067  
Environmental Ratings  
ENV-80  
*Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement  
instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher  
degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits.  
ESD Rating**  
Human ꢀody Model (HꢀM): Class 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1 - 2001  
Machine Model (MM): Class M1 (25V) in accordance with ANSI/ESD STM5.2-1999  
** Tested in industry standard 3x3 mm 8-lead MCLP package.  
Additional Notes  
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended  
to be excluded and do not form a part of this specification document.  
ꢀ. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s  
applicable established test performance criteria and measurement instructions.  
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms  
and conditions (collectively, Standard Terms”); Purchasers of this part are entitled to the rights and benefits  
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,  
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp  
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items  
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.  
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known  
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond  
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental  
effects on Known Good Dice.  
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-  
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party  
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such  
third-party of Mini-Circuits or its products.  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 6 of 6  

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