概述
规格参数
数据手册GVA-84-DP+ 概述
Wide Band Low Power Amplifier, 射频/微波放大器
GVA-84-DP+ 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| Reach Compliance Code： | unknown | 风险等级： | 5.66 |
| 射频/微波设备类型： | WIDE BAND LOW POWER | Base Number Matches： | 1 |
GVA-84-DP+ 数据手册
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PDF下载M5 Vooltn, HoiglhitGhaiinc Amplifier Die
GVA-84-D+
50Ω
DC to 7 GHz
Product Features
• High Gain, 24 dB typ. at 100 MHz
• High Pout, P1dB 20.5 dBm typ. at 100 MHz
• High IP3, 37 dBm typ. at 100 MHz
• Ruggedized design
• Fixed 5V operation
• Transient protected, US patent 6,943,629
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Ordering Information: Refer to Last Page
Typical Applications
• Base station infrastructure
• Portable Wireless
• CATV & DBS
• MMDS & Wireless LAN
• LTE
General Description
GVA-84-D+ (RoHS compliant) is a wideband high gain amplifier die offering high dynamic range. It uses
patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology.
Simplified Schematic and Pad description
RF-OUT and DC-IN
RF IN
GROUND
Pad
Description
RF input pad. This pad requires the use of an external DC blocking capacitor
chosen for the frequency of operation.
RF IN
RF output and bias pad. DC voltage is present on this pad; therefore a DC block-
ing capacitor is necessary for proper operation. An RF choke is needed to feed
DC bias without loss of RF signal due to the bias connection.
RF-OUT and DC-IN
GND
Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
REV. OR
M157233
GVA-84-D+
MCL NY
160722
Page 1 of 5
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Monolithic InGap HBT MMIC Amplifier Die
GVA-84-D+
Electrical Specifications1 at 25°C and 5V, unless noted
Parameter
Condition
(GHz)
Min.
Typ.
Max.
Units
Frequency Range2
Gain
DC
7
GHz
dB
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
2.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
2.0
24.1
21.7
18.4
16.0
14.6
12.5
10.5
0.0004
0.0021
0.0032
0.0044
0.0058
0.0131
0.0175
22.9
20.6
18.5
18.1
19.1
17.9
11.9
23.3
10.7
7.7
Magnitude of Gain Variation versus Temperature3
(values are negative)
dB/°C
dB
Input Return Loss
dB
Output Return Loss
7.1
7.0
6.3
5.6
Reverse Isolation
26.5
20.4
20.5
20.6
21.0
19.9
17.0
15.6
21.7
22.3
22.3
22.2
21.0
18.9
17.2
36.7
35.8
36.6
35.8
34.9
33.0
32.0
5.5
dB
dBm
Output Power @1 dB compression
dBm
dBm
dB
Saturated Output Power
(at 3dB compression)
Output IP3
Noise Figure
5.6
5.5
5.5
5.6
6.2
6.8
Group Delay
94
psec
V
Device Operating Voltage
4.8
85
5.0
5.2
Device Operating Current
108
130
mA
Device Current Variation vs. Temperature
Device Current Variation vs Voltage
Thermal Resistance, junction-to-ground lead
61.8
0.058
64
µA/°C
mA/mV
°C/W
1. Measured on Mini-Circuits characterization test board. Die packaged in SOT-89 Package and soldered on test board TB-313.
2. Guaranteed specification DC-7 GHz. Low frequency cut off determined by external coupling capacitors and external bias choke.
3. (Gain at 85°C - Gain at -45°C)/130
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 2 of 5
Monolithic InGap HBT MMIC Amplifier Die
GVA-84-D+
Absolute Maximum Ratings
Parameter
Ratings
-45°C to 85°C
160mA
Operating Temperature (ground lead)
Operating Current at 5V
Power Dissipation
1W
Input Power
13 dBm
5.8V
DC Voltage at RF-OUT and DC-IN pad
Note:
Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
Characterization Test Circuit
Vcc (Supply voltage)
+5V
RF-OUT
& DC-IN
RF-IN
RF-OUT
RF-IN
BLK-18+
Bias-Tee
ZX85-12G-S+
TB-313
Fig 1. Block Diagram of Test Circuit used for characterization. (Measured on Mini-Circuits characterization test board. Die packaged
in SOT-89 Package and soldered on test board TB-313).
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
Die Layout
Bonding Pad Position
(Dimensions in µm, Typical)
Fig 2. Die Layout
Fig 3. Bonding Pad Positions
Critical Dimensions
Parameter
Values
100
Die Thickness, µm
Die Width, µm
560
Die Length, µm
680
Bond Pad Size (RF In, RF Out+DC In, µm
Bond Pad Size (Ground pad), µm
100 x 100
100 x 200
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 3 of 5
Monolithic InGap HBT MMIC Amplifier Die
GVA-84-D+
Assembly and Handling Procedure
1. Storage
Dice should be stored in a dry nitrogen purged desiccators or equivalent.
2. ESD
MMIC Gallium Arsenide (GaAs) amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter
ESD damage to dice.
3. Die Attach
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s
cure condition. It is recommended to use antistatic die pick up tools only.
4. Wire Bonding
Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond
pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are
all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due
to undesirable series inductance.
Assembly Diagram
Recommended Wire Length, Typical
Wire
Wire Length (mm)
Wire Loop Height (mm)
Ground
0.25
1.20
0.15
0.15
RF In, RF Out + DC In
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 4 of 5
Monolithic InGap HBT MMIC Amplifier Die
GVA-84-D+
Additional Detailed Technical Information
additional information is available on our dash board.
Data Table
Performance Data
Case Style
Swept Graphs
S-Parameter (S2P Files) Data Set with and without port extension(.zip file)
Die
Quantity, Package
Model No.
Small, Gel - Pak: 5,10,50,100 KGD* GVA-84-DG+
Medium†, Partial wafer: KGD*<5K
Large†, Full Wafer
†Available upon request contact sales representative
GVA-84-DP+
GVA-84-DF+
Die Ordering and packaging
information
Refer to AN-60-067
Environmental Ratings
ENV-80
*Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement
instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher
degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits.
ESD Rating**
Human Body Model (HBM): Class 1C (1000 to <2000V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M2 (100 to <200V) in accordance with ANSI/ESD STM5.2-1999
** Tested in industry standard SOT-89 package.
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental
effects on Known Good Dice.
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such
third-party of Mini-Circuits or its products.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 5 of 5
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