MAV-11BSM [MINI]
Monolithic Amplifier; 单片放大器
| 型号： | MAV-11BSM |
| 厂家： | 
MINI-CIRCUITS |
| 描述： | Monolithic Amplifier |
| 文件： | 总1页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount
Monolithic Amplifier
MAV-11BSM
50Ω, 50 to 1000 MHz
Features
• equivalent to Agilent MSA-1105 and
Mini-Circuit's MAV-11SM
• high IP3, 34 dBm
• excellent VSWR, 1.2:1 typ.
• medium gain
• output power, 18 dBm
Applications
• cellular
• VHF/UHF receivers/transmitters
CASE STYLE: RRR137
Electrical Specifications @25°C
DC POWER
@ Pin 3
THERMAL PRICE
MODEL
NO.
FREQ.
(MHz)
GAIN, dB
Typical @MHz
MAXIMUM
POWER, dBm
DYNAMIC
RANGE
VSWR ABSOLUTE
RESIS-
TANCE***
θjc,
$
(:1)
Typ.
MAXIMUM
RATING**
Output
(1 dB
Comp.)
Typ.
Input
(no
dmg.)
NF
IP3
Device
Volt
Typ. Min. Max.
typ.
°C/W
dB dBm
Typ. Typ.
I
P
Current
(mA)
Qty.
(30)
fL - fU
100 500 1000 2000 Flatness Min.*
In Out
1.2 1.2
(mA) (mW)
MAV-11BSM
50-1000 12.7 12.1 11.3 9.5
±0.7 9.5
+18.0
+13
4.4
34
80 460
60
5.5 4.9 6.0
141
1.50
*
Minimum gain at highest frequency. Full temperature range.
** Permanent damage may occur if any of these limits are exceeded
*** Thermal resistance θjc is from hottest junction in the device to the mounting surface of the leads.
Maximum Ratings
OperatingTemperature
StorageTemperature
Pin Configuration
RF IN
-40°C to 85°C
-55°C to 100°C
1
3
RF OUT
DC
3
GND EXT.
2,4
model identification
Model
marking
11
MAV-11BSM
typical biasing configuration (MAV)
Resistor Values
Vcc
7
"1%"
28.0
45.3
61.9
78.7
95.3
113
8
9
10
11
12
13
14
15
Outline Drawing
127
143
158
Outline Dimensions ( inch
)
mm
A
B
C
D
E
F
G
H
J
wt.
.28
.14 .030 .020 .145 .110 .006 .010 .030 grams
.015
REV. OR
M87880
7.11 3.56 0.76 0.51 3.68 2.79 0.15 0.25 0.76
ED-11227
MAV-11BSM
YB/TD/CP
030702
®
INTERNET http://www.minicircuits.com
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661
Distribution Ce nte rs NORTH AMERICA 800-654-7949 417-335-5935 Fax 417-335-5945 • EUROPE 44-1252-832600 • Fax 44-1252-837010
ISO 9001 CERTIFIED
Mini-Circ uits
•
•
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