MNA-3A-DP+ [MINI]
Wide Band Low Power Amplifier,;
| 型号： | MNA-3A-DP+ |
| 厂家： | 
MINI-CIRCUITS |
| 描述： | Wide Band Low Power Amplifier, 射频 微波 |
| 文件： | 总7页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Directivity
Monolithic Amplifier Die
MNA-3A-D+
50Ω
0.5 to 2.5 GHz
The Big Deal
• Integrated matching, DC Blocks and bias circuits
• Excellent Active Directivity
• Operates over 2.8-5V
Product Overview
MNA-3A-D+ is a wideband PHEMT based MMIC amplifier die with high active Directivity. MNA integrates
the entire matching network and majority of the bias circuit inside the die, reducing the need for complicated
external circuits. This approach makes the MNA amplifier die extremely straightforward to use. This design
operates on a single 2.8 to 5V supply, is well matched for 50Ω.
Key Features
Feature
Advantages
Excellent Active Directivity
(Isolation- Gain)
16-25 dB
Ideal for use as a buffer amplifier minimizing interaction of adjacent circuits
Integrates DC blocks and RF choke
Single +2.8 to +5V operation
Minimizes external components, component count and circuit area.
Amplifier can be used at low voltage such as +3V or standard +5V.
+5V operation results in higher P1dB and OIP3.
Unpackaged die
Enables the user to integrate the amplifier directly into hybrids.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 1 of 7
High Directivity
MNA-3A-D+
Monolithic Amplifier Die
50Ω
0.5 to 2.5 GHz
Product Features
• Choice of supply voltage, +2.8V to +5V
• Internal DC blocking at RF input and output
• High directivity, 16-25 dB typ.
• Output power, +11.6 dBm typ.
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Typical Applications
• Buffer amplifier
• Cellular infrastructure
• Communications satellite
• Defense
Ordering Information: Refer to Last Page
General Description
MNA-3A-D+ is a wideband PHEMT based MMIC amplifier die with high active Directivity. MNA integrates
the entire matching network and majority of the bias circuit inside the die, reducing the need for complicated
external circuits. This approach makes the MNA amplifier die extremely straightforward to use. This design
operates on a single +2.8 to +5V supply, is well matched for 50Ω.
Simplified Schematic and Pad description
Pad
RF IN
Description
RF input pad.
RF output pad
RF-OUT
DC1 & DC2
DC Supply pad. Connect DC2 to DC1 via 33.2Ω resistor
REV. OR
M157112
MNA-3A-D+
MCL NY
160801
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 2 of 7
MNA-3A-D+
Monolithic Amplifier Die
Electrical Specifications1 at 25°C
Vs=5V
Typ.
Vs=2.8V
Units
Parameter
Condition (GHz)
Min.
0.5
Max.
Typ.
0.5-2.5
12.0
14.4
15.2
15.5
15.2
14.2
4.7
Frequency Range
Gain
2.5
GHz
dB
0.5
0.75
1.0
1.5
2.0
2.5
0.5
0.75
1.0
1.5
2.0
2.5
0.5
0.75
1.0
1.5
2.0
2.5
0.5
0.75
1.0
1.5
2.0
2.5
0.5
0.75
1.0
1.5
2.0
2.5
0.5
0.75
1.0
1.5
2.0
2.5
0.5
0.75
1.0
1.5
2.0
2.5
12.9
15.5
16.4
16.8
16.5
15.5
4.4
14.1
24.4
16.7
19.4
14.2
15.0
22.3
30.7
25.1
20.2
18.5
11.6
11.6
11.0
10.3
9.5
Input Return Loss
Output Return Loss
Output Power at P1dB
Output IP3
dB
dB
14.2
21.5
17.0
18.6
13.8
13.9
18.8
22.4
22.9
18.0
15.0
10.0
10.4
10.0
9.3
dBm
dBm
dB
8.6
8.4
9.5
23.3
24.1
22.9
22.0
21.0
21.0
4.5
4.1
3.9
3.9
4.0
21.0
21.7
21.0
20.2
19.4
19.2
4.5
Noise Figure
4.2
4.0
4.0
4.1
4.1
4.2
Directivity
(Isolation-Gain)
25.4
19.3
17.3
16.3
16.8
18.7
34.3
16
25.9
20.0
18.0
16.7
16.7
17.7
32.6
6
dB
DC Current
—
43.0
mA
Device Current Variation vs. Temperature(2)
Device Current Variation vs Voltage
Thermal resitance at 85°C
μA/°C
mA/mV
°C/W
0.00043
69.9
0.00124
69.9
1. Measured on Mini-Circuits characterization test board. Die packaged in 3x3 mm MCLP package and soldered on test board TB-186+
2. (Current at 85°C -Current at -45°C)/130
3. (Current at 5.25V-Current at 3.9V)/1.35
4. (Current at 3.9V-Current at 2.66V)/1.24
Absolute Maximum Ratings1,5
Parameter
Ratings
Operating Temperature
DC Voltage
-40°C to 85°C
7V at DC1 (DC2 connected to DC1 via 33.2Ω)
1V at RF IN & RF OUT
Power Dissipation
Input Power
650 mW
+6 dBm (continuous operation)
+28 dBm (5 minutes max)
5. Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 3 of 7
MNA-3A-D+
Monolithic Amplifier Die
Characterization Circuit
Fig 1. Block Diagram of Test Circuit used for characterization. (Die packaged in 3x3 mm MCLP package and soldered on Mini-
Circuits Characterization test board TB-186+) Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and
noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, -5 dBm/tone at output.
Recommended Application Circuit
Fig 2. Test Board includes case, connectors, and components soldered to PCB
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 4 of 7
MNA-3A-D+
Monolithic Amplifier Die
Die Layout
Bonding Pad Position
(Dimensions in μm, Typical)
Fig 3. Die Layout
Fig 4. Bonding Pad Positions
Critical Dimensions
Parameter
Values
100
Die Thickness, μm
Die Width, μm
975
Die Length, μm
1020
Bond Pad Size (RF In, RF Out, DC), μm
Bond Pad Size (Ground pad), μm
80 x 80
80 x 340
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 5 of 7
MNA-3A-D+
Monolithic Amplifier Die
Assembly and Handling Procedure
1. Storage
Dice should be stored in a dry nitrogen purged desiccators or equivalent.
2. ESD
MMIC PHEMT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter
ESD damage to dice.
3. Die Attach
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s
cure condition. It is recommended to use antistatic die pick up tools only.
4. Wire Bonding
Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond
pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are
all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due
to undesirable series inductance.
Assembly Diagram
Recommended Wire Length, Typical
Wire
RF In, RF Out
DC
Wire Length (mm)
Wire Loop Height (mm)
1.0
0.60
0.4
0.15
0.15
0.15
Ground
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 6 of 7
MNA-3A-D+
Monolithic Amplifier Die
Additional Detailed Technical Information
additional information is available on our dash board.
Data Table
Performance Data
Case Style
Swept Graphs
S-Parameter (S2P Files) Data Set with and without port extension(.zip file)
Die
Quantity, Package
Model No.
Small, Gel - Pak: 5,10,50,100 KGD* MNA-3A-DG+
Medium†, Partial wafer: KGD*<5K
Large†, Full Wafer
†Available upon request contact sales representative
MNA-3A-DP+
MNA-3A-DF+
Die Ordering and packaging
information
Refer to AN-60-067
Environmental Ratings
ENV-80
*Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement
instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher
degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits.
ESD Rating**
Human Body Model (HBM): Class 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (Pass 25V) in accordance with ANSI/ESD STM5.2-1999
** Tested in industry standard 3X3 mm 8 lead MCLP
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental
effects on Known Good Dice.
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such
third-party of Mini-Circuits or its products.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 7 of 7
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