PGA-103-DF+ [MINI]
Monolithic Amplifier Die;
| 型号： | PGA-103-DF+ |
| 厂家： | 
MINI-CIRCUITS |
| 描述： | Monolithic Amplifier Die 射频 微波 |
| 文件： | 总6页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultra Linear Low Noise
PGA-103-D+
Monolithic Amplifier Die
50Ω
0.05 to 4 GHz
The Big Deal
• Ultra High IP3
• Broadband High Dynamic Range
Product Overview
PGA-103-D+ (RoHS compliant) is an advanced wideband amplifier die fabricated using E-PHEMT technol-
ogy and offers extremely high dynamic range over a broad frequency range and with low noise figure. In
addition, the PGA-103-D+ has good input and output return loss over a broad frequency range without the
need for external matching components and has demonstrated excellent reliability.
Key Features
Feature
Advantages
Broadband covering primary wireless communications bands:
Cellular, PCS, LTE, WiMAX
Broad Band: 0.05 to 4.0 GHz
The PGA-103-D+ provides excellent IP3 performance relative to device size and pow-
er consumption. The combination of the design and E-PHEMT Structure provides en-
hanced linearity over a broad frequency range as evidence in the IP3 being typically 20
dB above the P 1dB point. This feature makes this amplifier ideal for use in:
• Driver amplifiers for complex waveform up converter paths
Ultra High IP3
Versus DC power Consumption:
42 dBm typical at 2 GHz at +5.0V
Supply Voltage and only 97mA
• Drivers in linearized transmit systems
• Secondary amplifiers in ultra High Dynamic range receivers
Low Noise Figure:
0.6 dB up to 1.0 GHz
A unique feature of the PGA-103-D+ which separates this design from all competitors is
the low noise figure performance in combination with the high dynamic range.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 1 of 6
Ultra Linear Low Noise
PGA-103-D+
Monolithic Amplifier Die
50Ω
0.05 to 4 GHz
Product Features
• 5V/3V operation
• High IP3, 42 dBm typ. at 2 GHz, Vd=5V
• Low Noise Figure, 0.6 at 1 GHz; 0.8 dB at 2 GHz
• Gain, 11.3 dB typ. at 2 GHz
• P1dB 22.3 dBm typ. at 2 GHz at Vd=5V
• Protected under US Patent 8,803,612
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Typical Applications
• Base station infrastructure
• Portable Wireless
• CATV & DBS
Ordering Information: Refer to Last Page
• MMDS & Wireless LAN
• LTE
General Description
PGA-103-D+ (RoHS compliant) is an advanced wideband amplifier fabricated using E-PHEMT technol-
ogy and offers extremely high dynamic range over a broad frequency range and with low noise figure. In
addition, the PGA-103-D+ has good input and output return loss over a broad frequency range without the
need for external matching components.
Simplified Schematic and Pad description
RF-OUT
RF-IN
and DC-IN
GND
Pad
Description
RF input pad. This pad requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF IN
RF output and bias pad. DC voltage is present on this pad; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”, Fig. 2
RF-OUT and DC-IN
GND
Connections to ground.
REV. OR
M151314
PGA-103-D+
TH/RS/CP
150727
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 2 of 6
Monolithic E-PHEMT MMIC Amplifier Die
PGA-103-D+
Electrical Specifications1 at 25°C, 50Ω unless noted
Vd=5.0V
Typ.
Vd=3V
Condition
Parameter
(GHz)
Min.
Max.
Typ.
Units
Frequency range
Gain
0.05
4.0
0.05-4.0
26.1
21.8
16.1
10.8
7.7
GHz
dB
0.05
0.4
1.0
2.0
3.0
4.0
0.05
0.4
1.0
2.0
3.0
4.0
0.05
0.8
2.0
3.0
4.0
6.0
0.05
0.8
2.0
3.0
4.0
6.0
2.0
0.05
0.8
2.0
3.0
4.0
6.0
0.05
0.8
2.0
3.0
4.0
6.0
26.7
22.3
16.5
11.3
8.1
6.1
5.6
Noise figure
dB
dB
dB
0.4
0.3
0.7
0.7
0.6
0.6
0.8
0.8
1.4
1.4
1.6
1.5
Input return loss
Output return loss
6.8
6.1
11.5
14.0
14.5
12.1
11.5
13.8
20.0
16.8
16.0
19.1
18.6
21.4
19.1
21.1
21.5
22.3
22.2
22.8
35.8
38.0
40.3
41.6
42.2
42.8
5.0
10.4
12.8
13.1
11.2
10.7
13.4
21.9
20.7
20.1
22.5
19.7
Reverse isolation
Output power @1dB compression2
dB
dBm
14.8
17.9
18.8
19.5
19.9
20.5
31.1
32.6
33.4
34.2
33.1
32.4
3.0
Output IP3
dBm
Device operating voltage
V
Device operating current
72
97
120
60
mA
Device current variation vs voltage
Thermal resistance, junction-to-ground lead
0.035
32
0.018
32
mA/mV
°C/W
1. Measured on Mini-Circuits Die Characterization test board. See Characterization Test Circuit (Fig. 1)
2. Current increases at P1dB
Absolute Maximum Ratings3
Parameter
Ratings
Operating Temperature (ground lead)
-40°C to 85°C
200 mA
1W
Operating Current at 5.0V
Power Dissipation at 5.0V
+21 dBm (50 to 2000 MHz)
+26 dBm (2000 to 4000 MHz)
Input Power (CW)
DC Voltage on RF-OUT & DC-IN
6V
3. Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
Measured in industry standard SOT-89 package.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 3 of 6
Monolithic E-PHEMT MMIC Amplifier Die
PGA-103-D+
Characterization Test Circuit
Vcc (Supply Voltage)
3/5V
RF-OUT
RF-IN
Vd
BLK-18+
Bias-Tee
ZX85-12G-S+
Die Test Board
Fig 1. Block Diagram of Test Circuit used for characterization. Gain, Return loss, Output power at 1dB compression (P1 dB) , output
IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pad= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 5 dBm/tone at output.
Recommended Application Circuit
Cblock=0.001µF, Bias-Tee=TCBT-14+, Cbypass=0.1µF
Fig 2b. Unconditionally stable (see note AN-60-064)
Fig 2a. Simplified
SEQ
Manufacturer P/N / Value
Size
PGA-103-D+ in industry standard
SOT-89
A1
C1, C2
C3
—
0805
1206
1206
0603
—
.01 uF
0.33 uF
10 uF
Die Layout
C4
Ground Bonding Pad
C5
330 pF
L1
TCCH-80+
620 nH
150 Ohm
L2
.115X.110
0603
R2
RF IN Bonding Pad
RF OUT + DC Bonding Pad
Bonding Pad Position
(Dimensions in µm, Typical)
820
720
490
371
Fig 3. Die Layout
Critical Dimensions
Parameter
Values
0
Die Thickness, µm
Die Width, µm
100
820
0
731
588 633
98
Fig 4. Bonding Pad Positions
Die Length, µm
731
Bond Pad Size, µm
150 x 75
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 4 of 6
Monolithic E-PHEMT MMIC Amplifier Die
Assembly and Handling Procedure
1. Storage
Dice should be stored in a dry nitrogen purged desiccators or equivalent.
2. ESD
MMIC E-PHEMPT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter
ESD damage to dice.
3. Die Attach
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s
cure condition. It is recommended to use antistatic die pick up tools only.
4. Wire Bonding
Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond
pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are
all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due
to undesirable series inductance.
Assembly Diagram
Recommended Wire Length, Typical
Wire
Wire Length (mm)
Wire Loop Height (mm)
RF-IN, RF-OUT + DC-IN
GROUND
0.6
0.3
0.15
0.15
RF Reference Plane - No port extension
Material: Roger 4350B 10 Mil
Dielectric Constant: 3.5
RF connector:
Copper thickness: 0.5 Oz
Southwest
Finishing: ENIG
1092-03A-5
0. 38mm
0.53mm
15mm
RF reference plane
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 5 of 6
Monolithic E-PHEMT MMIC Amplifier Die
PGA-103-D+
Additional Detailed Technical Information
additional information is available on our dash board.
Data Table
Performance Data
Case Style
Swept Graphs
S-Parameter (S2P Files) Data Set with and without port extension(.zip file)
Die
Quantity, Package
Model No.
Small, Gel - Pak: 10,50,100 KGD*
Medium†, Partial wafer: KGD*<5K
Large†, Full Wafer
†Available upon request contact sales representative
PGA-103-DG+
PGA-103-DP+
PGA-103-DF+
Die Ordering and packaging
information
Refer to AN-60-067
Environmental Ratings
ENV-80
*Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement
instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher
degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits.
ESD Rating**
Human Body Model (HBM): Class 1A (250 to <500V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (25V) in accordance with ANSI/ESD STM5.2-1999
** Tested in industry standard SOT-89 package.
Attention
Observe precautions
for handling electrostatic
sensitive devices
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental
effects on Known Good Dice.
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such
third-party of Mini-Circuits or its products.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 6 of 6
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