PSA-0012-DG+ [MINI]
Monolithic Amplifier Die;型号: | PSA-0012-DG+ |
厂家: | MINI-CIRCUITS |
描述: | Monolithic Amplifier Die |
文件: | 总6页 (文件大小:296K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Low Noise, High IP3
PSA-0012-D+
Monolithic Amplifier Die
50Ω
0.05 to 6 GHz
The Big Deal
• Ideal IF Amplifier
Low Gain
Low Noise Figure, 2.4dB
High Output Power
• Wide band
Product Overview
The PSA-0012-D+ is an advanced wide band, high dynamic range, low noise, high IP3, high output power,
monolithic amplifier die. Manufactured using E-PHEMT* technology enables it to work with a single positive
supply voltage.
Key Features
Feature
Advantages
Ideal Combined Performance
Low Noise: 2.4 dB
High IP3: +35 dBm
High P1dB: +22 dBm
Low Gain: 15dB
The PSA-0012-D+ design is optimized for use in critical IF Amplifier applications having an ideal
combination of Low Gain, Low Noise, and High Output Power.
Wide band operation
50 MHz to 6000 MHz
Operating over a broad frequency range, the PSA-0012-D+ covers a wide range of typical IF bands
making this amplifier ideal for use in a variety of applications.
With 10 dB input and 13 dB output return loss, the PSA-0012-D+ can be integrated into critical cir-
cuits with confidence that VSWR interactions with input and output components will have minimum
affect on performance.
Excellent Return Loss
Input: 10 dB at 3.5 GHz
Output: 13 dB at 4.5 GHz
Unpackaged Die
Enables user to integrate it directly into hybrids.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 1 of 6
Low Noise, High IP3
PSA-0012-D+
Monolithic Amplifier Die
50Ω
0.05 to 6 GHz
Product Features
• Low Noise Figure, 2.4dB typ. at 1 GHz
• High IP3, up to 36 dBm typ. at 1 GHz
• Output Power at 1dB comp., up to +22 dBm typ.
• Gain, 15.6 dB typ. at 1GHz
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Typical Applications
• Cellular
• ISM
• GSM
Ordering Information: Refer to Last Page
• WCDMA
• LTE
• WiMax
• WLAN
• UNII and HIPERLAN
General Description
PSA-0012-D+ is an advanced wideband, high dynamic range, low noise, high IP3, high output power,
monolithic amplifier die. Manufactured using E-PHEMT* technology enables it to work with a single posi-
tive supply voltage.
Simplified Schematic and Pad description
RF-OUT
RF-IN
and DC-IN
Pad
Description
RF-IN
RF input pad
RF-OUT & DC-IN
GROUND
RF output pad
Connections to ground
* Enhancement mode pseudomorphic High Electron Mobility Transistor.
REV. OR
M154401
PSA-0012-D+
MCL
160303
Page 2 of 6
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PSA-0012-D+
Monolithic Low Noise E-PHEMT MMIC Amplifier Die
Electrical Specifications1 at 25°C, Zo=50Ω
Parameter
Condition (GHz)
Min.
Typ.
Max.
Units
Frequency range
DC current (Id)
at DC Volts (Vd)
Noise figure
0.05
6.0
GHz
mA
V
92
5.0
dB
0.05
0.5
1.0
2.0
3.0
4.0
5.0
6.0
0.05
0.5
1.0
2.0
3.0
4.0
5.0
6.0
0.05
3.0
6.0
0.05
3.0
6.0
0.05
0.5
1.0
2.0
3.0
4.0
5.0
6.0
0.05
0.5
1.0
2.0
3.0
4.0
5.0
6.0
2.4
2.5
2.4
2.4
2.7
2.9
3.3
3.7
Gain
dB
18.0
16.2
15.6
14.2
12.7
11.2
9.9
8.4
Input return loss
Output return loss
Output IP3
dB
dB
9.8
10.1
6.0
11.2
13.9
8.4
dBm
33.9
35.5
35.7
35.7
35.8
35.2
35.4
33.8
20.2
21.8
22.2
22.1
21.9
21.9
21.7
21.0
69
Output power @1dB compression2
dBm
Thermal resistance
°C/W
1. Measured in Mini-Circuits die characterization test board. See Figure 1 for Test Circuit.
2. Current increases at P1dB
Absolute Maximum Ratings3
Parameter
Ratings
Operating temperature
-40°C to 85°C
DC voltage (Pad RF-OUT & DC-IN)
Device current (Pad RF-OUT & DC-IN)
Power dissipation
6V
130 mA
650 mW
0.05-3GHz, 14dBm
3-6GHz, 19dBm
Input power (CW)
3. Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
Die performance measured in industry standard SOT-363 package.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 3 of 6
PSA-0012-D+
Monolithic Low Noise E-PHEMT MMIC Amplifier Die
Characterization Test Circuit
Vcc (Supply voltage)
+5V
RF-OUT
RF-IN
BLK-18+
Bias-Tee
DIE TEST BOARD
ZX85-12G-S+
Figure 1. Block Diagram of Test Circuit used for characterization. Gain, Return loss, Output power at 1dB compression
(P1 dB), output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin=-25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 5 dBm/tone at output.
Die Layout
Bonding Pad Position
(Dimensions in µm, Typical)
Fig 2. Die Layout
Critical Dimensions
Parameter
Values
100
Fig 3. Bonding Pad Positions
Die Thickness, µm
Die Width, µm
400
Die Length, µm
420
Bond Pad Size, µm
Ground Bond Pad Size
75 x 75
75 X 150
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 4 of 6
PSA-0012-D+
Monolithic Low Noise E-PHEMT MMIC Amplifier Die
Assembly and Handling Procedure
1. Storage
Dice should be stored in a dry nitrogen purged desiccators or equivalent.
2. ESD
MMIC EPHEMPT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter
ESD damage to dice.
3. Die Attach
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s
cure condition. It is recommended to use antistatic die pick up tools only.
4. Wire Bonding
Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond
pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are
all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due
to undesirable series inductance.
Assembly Diagram
Recommended Wire Length, Typical
Wire
Wire Length (mm)
Wire Loop Height (mm)
Ground
0.50
0.70
0.15
0.15
RF-IN, RF-OUT & DC-IN
RF Reference Plane - No port extension
Material: Roger 4350B 10 Mil
Dielectric Constant: 3.5
RF connector:
Copper thickness: 0.5 Oz
Southwest
Finishing: ENIG
1092-03A-5
0. 38mm
0.53mm
15mm
RF reference plane
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 5 of 6
PSA-0012-D+
Monolithic Low Noise E-PHEMT MMIC Amplifier Die
Additional Detailed Technical Information
additional information is available on our dash board.
Data Table
Performance Data
Case Style
Swept Graphs
S-Parameter (S2P Files) Data Set with and without port extension(.zip file)
Die
Quantity, Package
Model No.
Small, Gel - Pak: 10,50,100
Medium†, Partial wafer: <5K
Large†, Full Wafer
†Available upon request contact sales representative
PSA-0012-DG+
PSA-0012-DP+
PSA-0012-DF+
Die Ordering and packaging
information (Note 4)
Refer to AN-60-067
Environmental Ratings
ENV-80
Note 4. Dice taken from PCM good wafer, No RF or DC test performed.
ESD Rating**
Human Body Model (HBM): Class 0 (<250V) in accordance with ANSI/ESD STM 5.1 - 2001; passes 150V
Machine Model (MM): Class M1 (<100V) in accordance with ANSI/ESD STM5.2-1999; passes 25V
** Tested in industry standard SOT-363 package.
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental
effects on Known Good Dice.
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such
third-party of Mini-Circuits or its products.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 6 of 6
©2020 ICPDF网 联系我们和版权申明