SAV-541-D+ [MINI]
E-PHEMT Die;
MINI-CIRCUITS 
Ultra Low Noise, Medium Current
E-PHEMT Die
SAV-541-D+
50Ω
0.45 to 6 GHz
Product Features
• Low Noise Figure, 0.4 dB
• Gain, 17 dB at 2 GHz
• High Output IP3, +33 dBm
• Output Power at 1dB comp., +21 dBm
• High Current, 15 to 60mA
• Wide bandwidth
• External biasing and matching required
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Typical Applications
• Cellular
Ordering Information: Refer to Last Page
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN
General Description
SAV-541-D+ is an ultra-low noise, high IP3 transistor die, manufactured using E-PHEMT* technology
enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly
below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it
makes it an ideal amplifier for demanding base station applications.
Simplified Schematic and Pad description
DRAIN
GATE
SOURCE
Pad
Source
Gate
Description
Ground
RF-IN
Drain
RF-OUT
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
REV. OR
M155842
SAV-541-D+
RS/CP
160407
Page 1 of 5
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SAV-541-D+
E-PHEMT Die
DC Electrical Specifications1 at TAMB=25°C, Frequency 0.45 to 6 GHz
Symbol
Parameter
Condition
Typical
Units
IDSS
VGS
VTH
IDSS
Drain Current
15
30
60
mA
V
Operational Gate Voltage
Threshold Voltage
VDS=3V, at respective IDS
VDS=3V, IDS=4 mA
0.34
0.26
1.0
0.39
0.26
1.0
0.48
0.26
1.0
V
Saturated Drain Current
VDS=3V, VGS=0 V
µA
VDS=3V, Gm=∆ IDS/∆VGS
∆VGS=VGS1-VGS2
VGS1=VGS at respective IDS
VGS2=VGS1+0.05V
GM
Transconductance
251
327
392
mS
RF Electrical Specifications2
VDS=3V
VDS=4V,
IDS=15mA IDS=30mA IDS=60mA IDS=15mA IDS=30mA IDS=60mA
Symbol
Parameter
Condition (GHz)
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Units
NF2
0.9
2.0
3.9
5.8
0.9
2.0
3.9
5.8
0.9
2.0
3.9
5.8
0.9
2.0
3.9
5.8
0.34
0.46
0.66
1.50
22.0
17.1
11.7
8.4
0.28
0.35
0.62
1.18
22.4
17.1
12.0
7.6
0.25
0.33
0.53
1.40
24.7
19.0
13.4
10.0
32.1
32.9
32.6
33.8
18.5
19.0
18.1
18.9
0.35
0.5
0.27
0.34
0.52
1.29
23.7
18.3
12.8
9.4
0.25
0.38
0.53
1.36
24.7
19.1
13.5
10.1
32.3
33.1
35.7
35.8
20.6
21.0
20.4
20.8
Noise Figure
dB
0.63
1.47
22.0
17.1
11.8
8.4
Gain
OIP3
Gain
dB
22.7
21.7
23.9
22.0
16.9
18.5
17.8
19.6
27.7
27.4
30.2
28.3
17.3
18.1
17.7
18.8
23.0
22.1
24.4
22.5
20.0
21.4
20.2
22.3
27.8
27.7
30.0
28.3
18.5
20.3
20.0
20.8
Output IP3
dBm
dBm
Power output at 1 dB
Compression
P1dB3
1. Measured on industry standard SOT-343 (SC-70) package.
2. Measured on die using GSG (Ground-Signal-Ground) probe. See figure 1.
3. Drain current was allowed to increase during compression measurements.
Absolute Maximum Ratings4
Max.
Units
V
V
Symbol
Parameter
5
VDS
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
5
-5 to 0.7
-5 to 0.7
120
5
VGS
5
VGD
V
5
IDS
mA
mA
mW
dBm
°C
IGS
Gate Current
2
PDISS
Total Dissipated Power
RF Input Power
360
6
PIN
17
TCH
TOP
ΘJC
Channel Temperature
Operating Temperature
Thermal Resistance
150
-40 to 85
160
°C
°C/W
4. Operation of this device above any one of these parameters may cause permanent damage.
5. Assumes DC quiescent conditions.
6. IGS is limited to 2 mA during test.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 2 of 5
SAV-541-D+
E-PHEMT Die
Characterization Test Circuit
Source
Source
Drain
Gate
Source
Source
RF Reference Plane
Fig 1. Block Diagram of Test Circuit used.
Gain, Return loss, Output Power at 1dB compression (P1dB), Output IP3 (OIP3) and Noise figure measured using Agilent’s
N5242A PNA-X Microwave network analyzer.
Conditions:
1. Drain voltage (with reference to source, VDS)=3 or 4V as shown.
2. Gain voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown.
3. Gain:Pin=-25 dBm
4. Output IP3 (OIP3)= two tones spaced 1 MHz apart. 0 dBm/tone at output.
5. No external matching components used.
Die Layout
Bonding Pad Position
(Dimensions in µm, Typical)
Fig 2. Die Layout
Fig 3. Bonding Pad Positions
Critical Dimensions
Parameter
Values
100
Die Thickness, µm
Die Width, µm
400
Die Length, µm
400
Bond Pad Size, µm
75 x 75
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 3 of 5
SAV-541-D+
E-PHEMT Die
Assembly and Handling Procedure
1. Storage
Dice should be stored in a dry nitrogen purged desiccators or equivalent.
2. ESD
MMIC EPHEMPT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter
ESD damage to dice.
3. Die Attach
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s
cure condition. It is recommended to use antistatic die pick up tools only.
4. Wire Bonding
Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond
pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are
all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due
to undesirable series inductance.
Assembly Diagram
Recommended Wire Length, Typical
Wire
Wire Length (mm)
Wire Loop Height (mm)
GATE, DRAIN
0.70
0.30
0.15
0.15
SOURCE (TO GROUND)
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 4 of 5
SAV-541-D+
E-PHEMT Die
Additional Detailed Technical Information
additional information is available on our dash board.
Data Table
Performance Data
Case Style
Swept Graphs
S-Parameter (S2P Files) Data Set with and without port extension(.zip file)
Die
Quantity, Package
Model No.
Small, Gel - Pak: 10,50,100 KGD*
Medium†, Partial wafer: KGD*<5K
SVA-541-DG+
SVA-541-DP+
Die Ordering and packaging
information
Refer to AN-60-067
Environmental Ratings
ENV-80
ESD Rating
Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999
** Tested in industry standard 6-lead 400µmx400µm package.
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental
effects on Known Good Dice.
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such
third-party of Mini-Circuits or its products.
®
Mini-Circuits
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 5 of 5
相关型号：
SAV-551+
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MINI
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