SBT101BM [MINI]
Rectifier Diode,;
| 型号： | SBT101BM |
| 厂家： | 
MINI-CIRCUITS |
| 描述： | Rectifier Diode, |
| 文件： | 总3页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon-BasedTechnology Corp.
Small-Signal Schottky Barrier Diodes
SBT101M Series
SBT101M series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT®) developed by
Silicon-Based Technology Corporation, which exhibit high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
ꢀ Features and Advantages:
ꢁ Low forward voltage drop(VF)
ꢁ Low reverse leakage current (IR)
ꢁ Very small conduction power loss
ꢁ Very small switching power loss
ꢁ Very high switching speed
ꢁ Very high reliability
Electrical Characteristics :
ꢀ
(@TA=25°C unless otherwise specified)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
SBT101AM
SBT101BM
SBT101CM
60
50
40
Reverse
Breakdown
Voltage (Note 3)
V(BR)R
-
V
IR=10ꢀA
0.30
0.30
0.28
0.60
0.60
0.55
IF=1.0mA
IF=1.0mA
IF=1.0mA
IF=15mA
IF=15mA
IF=15mA
VR=50V
SBT101AM
SBT101BM
SBT101CM
SBT101AM
SBT101BM
SBT101CM
SBT101AM
Forward
-
-
VF
V
Voltage Drop
Peak Reverse
200
nA
SBT101BM
IRM
VR=40V
VR=30V
Current (Note 2)
SBT101CM
SBT101AM
SBT101BM
SBT101CM
2.0
2.1
2.2
Total
CT
trr
-
-
pF
ns
VR=0V, f=1.0MHZ
Capacitance
IF=IR=5.0mA,
Irr=0.1ꢀIR,RL=100ꢁ
Reverse Recovery Time
1.0
T
B
S
Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C
Tel 886-3-5777897
Fax 886-3-5779832
T
B
S
SBT101M Series
Maximum Ratings :
ꢀ
(@TA=25°C unless otherwise specified)
SBT101AM
SBT101BM
SBT101CM
Symbol
VRRM
VRWM
VR
Characteristic
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
60
42
50
40
28
V
RMS Reverse Voltage
VR(RMS)
IFM
35
15
V
mA
mA
A
Forward Continuous Current (Note 1)
Non-Repetitive Peak
@t≤1.0s
50
IFSM
PD
Forward Surge Current @t=10ꢀs
Power Dissipation (Note 1)
Thermal Resistance, Junction to
Ambient Air (Note 1)
2.0
400
mW
RθJA
375
°C/W
Operating Temperature Range
Storage Temperature Range
Tj, TSTG
-55 to +125
-55 to +155
°C
°C
Notes: 1. Part mounted on FR4 PC Board with recommended pad layout, which can be found on our website
at http://www.sbt.com.tw.
2. No purposefully added lead.
ꢀ Package Data :
•
•
•
•
Case: Molded Plastic Material (UL Flammability Classification 94V-0)
Terminals: Solderable Plated Terminals (MIL-STD-202, Method 208)
Lead Free Plating (Matte Tin Finish)
Polarity: See device configurations below
Approx. Weight: 0.05 grams.
•
Package outline and dimensions (see below)
•
T
B
S
SBT101M Series
Mini MELF
A
B
C
DIMENSIONS (MM)
A
B
C
Min. 3.30 1.30 0.28
Max. 3.70 1.60 0.50
ꢀ Ordering Information (Note 3)
Shipping
Part Number
SBT101AM
Marking Code
Packaging Type
7″ Tape & Real
SBTJAM
SBTJBM
SBTJCM
Mini MELF
Mini MELF
Mini MELF
3K
3K
3K
SBT101BM
SBT101CM
Notes: 3. Website at http://www.sbt.com.tw
4. Bulk package in a box form is also available upon request.
5. Day code marking is YM, in which Y represents year (For example: 2005 is marked by 5);
M represents month in a year (For example: March is marked by C; November is marked by K).
相关型号：
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