SBT120AP [MINI]

Rectifier Diode,;
SBT120AP
型号: SBT120AP
厂家: MINI-CIRCUITS    MINI-CIRCUITS
描述:

Rectifier Diode,

文件: 总4页 (文件大小:313K)
中文:  中文翻译
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Silicon-BasedTechnology  
Power Schottky Barrier Rectifier  
SBT120A Series  
SBT120A series are Schottky Barrier Diodes fabricated by a series of  
proprietary Schottky barrier patents and technologies (SBT®) developed by  
Silicon-Based Technology Corporation, which exhibit high-performance  
characteristics for modern power switching, conversion and protection  
applications with high speed and low power consumptions. The package types  
as described in this data sheet are set forth in routine production; other packages  
are available upon special orders.  
Features and Advantages:  
Low forward voltage drop(VF)  
Low reverse leakage current (IR)  
Very small conduction power loss  
Very small switching power loss  
Very high switching speed  
Very high reliability  
Static Electrical Characteristics :  
VF(V)  
Max.  
IF  
IR(A)  
VR  
TA  
(A)  
Max./Typ.  
(V)  
(°C)  
SBT120AL  
SBT120AN  
SBT120AH  
SBT120AP  
0.42  
0.45  
0.48  
0.52  
1.0  
100/25  
20  
25  
T
B
S
Silicon-Based Technology Corporation  
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C  
Tel 886-3-5777897  
Fax 886-3-5779832  
T
B
S
SBT120A Series  
Maximum Ratings and Electrical Characteristics :  
(@TA=25°C unless otherwise specified)  
Characteristics  
Peak Repetitive Reverse Voltage ,VRRM  
Working Peak Reverse Voltage, VRWM  
DC Blocking Voltage, VR  
SBT120AL SBT120AN SBT120AH SBT120AP Unit  
20  
V
RMS Reverse Voltage ,VR(RMS)  
14  
V
A
@TT=130°C  
Average Rectified Output Current, IO  
1.0  
Non-Repetitive Peak Forward Surge Current under  
8.3msSingle Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method), IFSM  
40  
A
@IF=1.0A  
Forward Voltage, VFM  
0.42  
0.45  
0.48  
0.52  
V
Peak Reverse Current at Rated DC  
Blocking Voltage, IRM  
Max.  
Typ.  
100  
25  
µA  
Typical Junction Capacitance, CJ (Note 1)  
90  
pF  
°C  
Operating (Storage) Temperature Range, TJ (TSTG  
)
-65 to +150  
Notes: 1. Measured at 1.0 MHz and with an applied DC reverse voltage of 4.0V.  
Package Data :  
Case: Molded Plastic Material (UL Flammability Classification 94V-0)  
Terminals: Solderable Plated Terminals (MIL-STD-202, Method 208)  
Lead Free Plating (Matte Tin Finish)  
Polarity: Cathode Band as shown in page3  
Approx. Weight: 0.0669 grams for SMA  
T
B
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SBT120A Series  
SMA  
D
H
B
J
G
A
C
E
DIMENSIONS(MM)  
A
B
C
D
E
G
H
J
Min.  
2.29  
2.92  
4.00  
4.60  
1.27  
1.63  
0.15  
0.31  
4.80  
5.59  
0.10  
0.20  
0.76  
1.52  
2.01  
2.62  
Max.  
Ordering Information (Note 2)  
Shipping  
7Tape & Real 13Tape & Real  
1.5K 5K  
Part Number Marking Code Packaging Type  
SBT120AX SBT1BAX SMA  
Notes: 2. For Packaging Details, please go to our Website at http://www.sbt.com.tw  
X = Device type, e.g.: X=L, X=N, X=H, X=P  
3. Discrete form in a box is also available upon request.  
4. Day code marking is YWW or YM, in which Y represents year (For example: 2005 is marked by 5); WW  
represents weekth in a year (For example: 5th week is marked by 05); M represents month in a year (For  
example: March is marked by C; November is marked by K).  
T
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SBT120A Series  

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