TAV-581+F68 [MINI]
Transistor;
| 型号： | TAV-581+F68 |
| 厂家： | 
MINI-CIRCUITS |
| 描述： | Transistor |
| 文件： | 总11页 (文件大小：722K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultra Low Noise, Medium Current
E-PHEMT
0.45-6GHz
TAV-581+
Product Features
• Low Noise Figure, 0.5 dB
• Gain, 17 dB at 2 GHz
• High Output IP3, +31 dBm
• Output Power at 1dB comp., +19 dBm
• Low Current, 30mA
• Wide bandwidth
• External biasing and matching required
CASE STYLE: FG873
PRICE: $1.19 ea. QTY. (10-49)
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
Typical Applications
• Cellular
The +Suffix has been added in order to identify RoHS
Compliance. See our web site for RoHS Compliance
methodologies and qualifications.
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN
General Description
TAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology
enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be-
low 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes
it an ideal amplifier for demanding base station applications. We offer these units assembled into a com-
plete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP
family of models on our web site.
simplified schematic and pin description
DR AIN
GATE
S OUR CE
S OUR CE
GATE
DR AIN
S OUR CE
Function
Pad Number
Description
Source terminal, normally connected to ground
Gate used for RF input
Source
Gate
2 & 4
3
1
Drain
Drain used for RF output
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
REV. B
IF/RF MICROWAVE COMPONENTS
M123887
ED-13285
TAV-581+
090730
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 1 of 11
E-PHEMT
TAV-581+
Electrical Specifications at TAMB=25°C, Frequency 0.45 to 6 GHz
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
DC Specifications
VGS
VTH
IDSS
Operational Gate Voltage
Threshold Voltage
VDS=3V, IDS=30 mA
VDS=3V, IDS=4 mA
VDS=3V, VGS=0 V
0.28
0.18
0.39
0.26
1.0
0.5
0.38
5.0
V
V
Saturated Drain Current
µA
VDS=3V, Gm=∆ IDS/∆VGS
∆VGS=VGS1-VGS2
VGS1=VGS at IDS=30 mA
GM
Transconductance
Gate leakage Current
Noise Figure
230
327
560
200
mS
VGS2=VGS1+0.05V
IGSS
VGD=VGS=-3V
µA
RF Specifications, Z0=50 Ohms (Figure 1)
NF(1)
VDS=3V, IDS=30 mA
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
0.4
0.5
0.9
1.5
0.9
dB
dB
VDS=4V, IDS=30 mA
VDS=3V, IDS=30 mA
f=0.9 GHz
0.4
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
0.5
22.9
17.3
12.1
8.8
15.0
18.5
Gain
Gain
VDS=4V, IDS=30 mA
VDS=3V, IDS=30 mA
f=0.9 GHz
22.7
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
17.2
28.3
30.3
33.0
34.7
OIP3
Output IP3
dBm
dBm
VDS=4V, IDS=30 mA
VDS=3V, IDS=30 mA
f=0.9 GHz
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
28.1
30.0
17.8
18.3
18.8
19.1
Power output at 1 dB
Compression
P1dB(2)
VDS=4V, IDS=30 mA
f=0.9 GHz
f=2.0 GHz
19.4
20.2
Absolute Maximum Ratings(3)
Symbol
Parameter
Max.
Units
V
(4)
VDS
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
5
-5 to 0.7
-5 to 0.7
100
(4)
VGS
V
(4)
VGD
V
(4)
IDS
mA
mA
mW
dBm
°C
IGS
Gate Current
2
PDISS
Total Dissipated Power
RF Input Power
550
(5)
PIN
17
TCH
TOP
TSTD
ΘJC
Channel Temperature
Operating Temperature
Storage Temperature
Thermal Resistance
150
-40 to 85
-65 to 150
112
°C
°C
°C/W
Notes:
(1) Includes testboard loss (measured in Mini-Circuits test board TB-154)
(2) During Compression, IDS increases to 48mA typ.
(3) Operation of this device above any one of these parameters may cause permanent damage.
(4) Assumes DC quiescent conditions.
(5)IGS is limited to 2 mA during test.
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 2 of 11
TAV-581+
E-PHEMT
Characterization Test Circuit
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-154)
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent’s Noise Figure meter N8975A and noise source N4000A.
Conditions:
1. Drain voltage (with reference to source, VDS)= 3 or 4V as shown.
2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table.
3. Gain: Pin= -25dBm
4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
5. No external matching components used.
Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-154 (Material: Rogers 4350, Thickness: 0.02”)
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Page 3 of 11
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
E-PHEMT
TAV-581+
Typical Performance Curves
I-V (VGS=0.1V PER STEP) (2)
NOISE FIGURE vs IDS @ 2 GHz (1)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
120
0.2V
0.3V
0.4V
0.5V
0.6V
100
80
60
40
20
0
VDS=3V
VDS=4V
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS (V)
NOISE FIGURE vs IDS @ 0.9 GHz (1)
F Min vs IDS @ 0.9 GHz (3)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.20
VDS=3V
VDS=4V
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.10
VDS=2V
VDS=3V
VDS=4V
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
F Min vs IDS @ 2 GHz (3)
GAIN vs IDS @ 2 GHz (1)
0.45
0.43
0.41
0.39
0.37
0.35
0.33
0.31
0.29
0.27
0.25
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
14.5
14.0
VDS=2V
VDS=3V
VDS=3V
VDS=4V
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 4 of 11
TAV-581+
E-PHEMT
GAIN vs IDS @ 0.9 GHz (1)
VDS=3V VDS=4V
OIP3 vs IDS @ 2GHz (1)
VDS=3V VDS=4V
25.0
45
40
35
30
25
20
15
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
P1dB vs IDS @ 2 GHz (1,4)
OIP3 vs IDS @ 0.9 GHz (1)
25
24
23
22
21
20
19
18
17
16
15
45
40
35
30
25
20
15
VDS=3V
VDS=4V
VDS=3V
VDS=4V
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
P1dB vs IDS @ 0.9 GHz (1,4)
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
25
24
23
22
21
20
19
18
17
16
15
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS=3V
VDS=4V
-40°C
+25°C
+85°C
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Page 5 of 11
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
E-PHEMT
TAV-581+
GAIN vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
OIP3 vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
32
29
26
23
20
17
14
11
8
45
43
41
39
37
35
33
31
29
27
25
-45°C
+25°C
+85°C
-45°C
+25°C
+85°C
5
2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=30mA
P1dB vs FREQUENCY & TEMPERATURE (1,4)
@ VDS=3V, IDS=30mA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
22
21
20
19
18
17
16
15
-40°C
+25°C
+85°C
-45°C
+25°C
+85°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
GAIN vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=30mA
OIP3 vs FREQUENCY & TEMPERATURE
@ VDS=4V, IDS=30mA
32
29
26
23
20
17
14
11
8
45
43
41
39
37
35
33
31
29
27
25
-45°C
+25°C
+85°C
-45°C
+25°C
+85°C
5
2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 6 of 11
TAV-581+
E-PHEMT
P1dB vs FREQUENCY & TEMPERATURE (1,4)
@ VDS=4V, IDS=30mA
F Min vs FREQ @ VDS=3V (3)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
24
23
22
21
20
19
18
17
16
15
20 mA
30 mA
40 mA
-45°C
+25°C
+85°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
Reference Plane Location for S and Noise Parameters (see data in pages 8 & 9)
(Refer to Application Note AN-60-040)
Fig 3. Reference Plane Location
Notes:
Noise parameters were measured over 0.5 to 6 GHz by Modelithics® using a solid state tuner-based NP noise parameter test
system available from Maury Microwave. F Min, optimimum source reflection coefficient and noise resistance values are calculated
values based on a set of measurements made at approximately 16 different impedances. Some data smoothing was applied to ar-
rive at the presented data set.
S-parameters were measured by Modelithics® on an Anritsu Lightning vector network analyzer over 0.1 to 18GHz using 350um
pitch RF probes from GGB industries combined with customized thru-reflect-line (TRL) calibration standards. The reference plane is
at the device package leads, as shown in the picture.
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Page 7 of 11
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
E-PHEMT
TAV-581+
Typical S-parameters, VDS=3V and IDS=30 mA (Fig. 3)
S11
S21
S12
S22
Freq.
(GHz)
MSG/MAG
(dB)
Mag
(dB)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.88
0.77
0.76
0.70
0.68
0.68
0.67
0.66
0.67
0.68
0.70
0.73
0.75
0.79
0.83
0.86
0.89
0.91
0.93
0.94
0.96
0.96
0.95
-16.36
-73.63
23.19
18.30
13.45
12.51
9.11
7.42
7.09
5.80
4.90
3.73
3.02
2.53
2.17
1.88
1.63
1.42
1.23
1.06
0.91
0.77
0.66
0.56
0.47
0.40
27.31
25.25
22.57
21.95
19.19
17.41
17.02
15.27
13.80
11.43
9.59
8.06
6.71
5.49
4.27
3.04
1.77
0.47
169.5
132.3
108.1
103.4
84.2
72.0
69.3
56.2
44.0
0.009
0.037
0.05
0.052
0.059
0.063
0.065
0.07
0.075
0.087
0.099
0.113
0.125
0.136
0.145
0.15
86.4
52.2
36.6
34.2
24.0
19.5
18.2
13.5
8.8
0.60
0.47
0.35
0.33
0.25
0.21
0.20
0.17
0.15
0.13
0.14
0.16
0.20
0.26
0.32
0.39
0.47
0.54
0.59
0.65
0.70
0.74
0.77
0.80
-12.94
-52.76
-79.99
-85.89
-109.19
-124.99
-128.70
-146.31
-163.82
161.15
127.97
98.63
34.0
27.0
24.3
23.8
21.9
20.7
20.4
19.2
18.1
16.0
13.2
11.7
10.6
9.7
9.1
8.8
9.1
8.5
7.9
7.5
7.0
6.7
-112.16
-120.13
-149.97
-167.63
-171.42
171.27
156.22
130.42
107.77
86.82
21.4
0.0
-0.3
-10.8
-22.5
-35.2
-48.6
-63.3
-78.4
-94.0
-109.6
-125.5
-140.9
-153.9
-163.5
-174.6
174.5
-20.8
-41.4
-61.7
-81.9
-102.2
-122.3
-142.1
-162.0
178.8
163.1
149.1
134.2
118.5
66.89
47.68
28.73
9.67
74.15
53.20
34.25
16.29
-8.89
0.151
0.15
-0.68
-26.76
-44.42
-60.99
-73.61
-83.75
-94.86
-106.68
-17.06
-33.39
-49.07
-61.42
-72.07
-83.99
-97.27
-0.86
-2.25
-3.64
-5.10
-6.51
-7.98
0.146
0.139
0.131
0.119
0.109
0.101
6.4
6.0
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
40
35
30
25
20
15
10
5
MSG/MAG
S21(dB)
0
-5
-10
-15
0
5
10
15
20
Frequency (GHz)
Typical Noise Parameters, VDS=3V and IDS=30 mA (Fig. 3)
Ga
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle)
Associated
Gain (dB)
Rn/50
0.5
0.7
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
0.09
0.12
0.16
0.18
0.34
0.36
0.43
0.54
0.70
0.89
1.04
1.07
0.33
0.33
0.34
0.35
0.38
0.39
0.40
0.42
0.44
0.46
0.47
0.47
16.30
28.96
41.34
47.42
99.05
104.44
125.31
154.52
-166.36
-126.19
-102.25
-96.96
0.07
0.07
0.06
0.06
0.03
0.03
0.03
0.03
0.06
0.11
0.16
0.18
26.6
24.7
23.1
22.4
17.8
17.5
16.3
14.9
13.3
11.8
10.7
10.5
Notes:
F Min.: Minimum Noise Figure
GOpt: Optimum Source Reflection Coefficient
Rn: Equivalent noise resistance
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 8 of 11
TAV-581+
E-PHEMT
Typical S-parameters, VDS=4V and IDS=30 mA (Fig. 3)
S11
S21
S12
S22
Freq.
(GHz)
MSG/MAG
(dB)
Mag
(dB)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.88
0.77
0.76
0.70
0.68
0.67
0.67
0.66
0.67
0.68
0.70
0.72
0.75
0.79
0.83
0.86
0.89
0.91
0.93
0.94
0.96
0.96
0.96
-16.62
-73.31
23.16
18.36
13.51
12.58
9.17
7.47
7.14
5.84
4.93
3.75
3.04
2.55
2.19
1.90
1.65
1.44
1.24
1.07
0.92
0.78
0.67
0.56
0.48
0.40
27.30
25.28
22.61
21.99
19.25
17.47
17.07
15.33
13.86
11.49
9.66
8.14
6.79
5.58
4.37
3.15
1.89
0.60
169.5
132.5
108.3
103.5
84.3
72.1
69.3
56.2
44.0
0.009
0.036
0.049
0.051
0.058
0.062
0.063
0.069
0.074
0.085
0.098
0.111
0.123
0.135
0.144
0.15
0.152
0.151
0.147
0.14
0.132
0.121
0.111
0.102
79.4
52.2
37.1
33.7
24.1
19.2
18.4
13.6
9.0
0.61
0.49
0.36
0.34
0.25
0.21
0.20
0.17
0.14
0.12
0.12
0.14
0.18
0.24
0.30
0.38
0.45
0.52
0.58
0.64
0.69
0.74
0.77
0.80
-12.06
-50.89
-76.91
-82.55
-104.45
-119.17
-122.66
-139.21
-155.97
169.62
134.56
103.32
77.45
55.67
36.33
18.12
0.90
-15.63
-32.08
-47.96
-60.57
-71.29
-83.45
-96.97
34.0
27.0
24.4
23.9
22.0
20.8
20.5
19.3
18.2
15.9
13.3
11.8
10.7
9.8
9.3
9.1
9.1
8.5
8.0
7.5
7.0
6.7
-111.77
-119.67
-149.65
-167.34
-171.13
171.46
156.41
130.52
107.77
86.77
21.4
-0.1
0.0
-10.3
-21.6
-34.4
-47.6
-62.3
-77.4
-93.0
-108.5
-124.8
-140.4
-153.4
-163.2
-174.6
174.8
-20.9
-41.6
-61.9
-82.2
-102.6
-122.9
-142.8
-162.9
177.7
161.7
147.6
132.4
116.4
66.87
47.72
28.73
9.64
-8.92
-26.90
-44.62
-61.40
-74.24
-84.49
-95.82
-107.81
-0.73
-2.11
-3.52
-4.99
-6.42
-7.93
6.4
5.9
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
40
35
30
25
20
15
10
5
MSG/MAG
S21(dB)
0
-5
-10
-15
0
5
10
15
20
Frequency (GHz)
Typical Noise Parameters, VDS=4V and IDS=30 mA (Fig. 3)
Ga
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle)
Associated
Gain (dB)
Rn/50
0.5
0.7
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
0.09
0.12
0.16
0.18
0.34
0.35
0.42
0.53
0.69
0.89
1.03
1.06
0.37
0.37
0.37
0.37
0.39
0.39
0.40
0.41
0.43
0.45
0.46
0.47
16.12
28.50
40.63
46.59
97.42
102.75
123.43
152.52
-168.14
-127.09
-102.09
-96.48
0.08
0.07
0.06
0.06
0.03
0.03
0.03
0.03
0.05
0.10
0.16
0.18
26.6
24.6
23.0
22.3
17.8
17.4
16.3
14.9
13.3
11.8
10.8
10.6
Notes:
F Min.: Minimum Noise Figure
GOpt: Optimum Source Reflection Coefficient
Rn: Equivalent noise resistance
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Page 9 of 11
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
E-PHEMT
TAV-581+
Product Marking
White Ink
Marking
MCL
58
YYWW
Body
(Black)
Additional Detailed Technical Information
Additional information is available on our web site www.minicircuits.com. To access this information
enter the model number on our web site home page.
Performance data, graphs, s-parameter data set (.zip file)
Case Style: FG873
Plastic low profile 3mm x 3mm, lead finish: tin/silver/nickel
Suggested Layout for PCB Design: PL-301
Tape & Reel: F68
Characterization Test Board: TB-154+
Environmental Ratings: ENV08T2
ESD Rating
Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999
MSL Rating
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D
MSL Test Flow Chart
Visual
Inspection
Start
Electrical Test
SAM Analysis
Soak
85°C/85RH
168 hours
Reflow 3 cycles,
260°C
Bake at 125°C,
24 hours
Visual
Inspection
Electrical Test
SAM Analysis
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
Page 10 of 11
TAV-581+
E-PHEMT
Recommended Application Circuit
Vcc (+5V DC)
DC BIAS CIRCUIT
R1
R3
Q1
R4
Q2
R2
RF CIRCUIT
DRAIN
L1
L2
INPUT
MATCHING
CIRCUIT
OUTPUT
MATCHING
CIRCUIT
RF-OUT
RF-IN
GATE
(MUST PASS DC)
(MUST PASS DC)
C1
C2
SOURCE
DUT
VDS, V (nom)
3
4
IDS, mA
(nom)
30mA
30mA
R1
R2
4320Ω
4320Ω
4320Ω
4320Ω
R3
3570Ω
1210Ω
R4
68.1Ω
33.2Ω
Q1
Q2
C1
MMBT3906*
MMBT3906*
0.01µF
MMBT3906*
MMBT3906*
0.01µF
C2
0.01µF
0.01µF
L1**
L2**
840nH
840nH
840nH
840nH
*
Fairchild Semiconductor™ part number
** Piconics™ part number CC45T47K240G5
Optimized Amplifier Circuits
For band specific, drop-in modules, and as an alternative to designing circuits,
please refer to Mini-Circuits TAMP and RAMP series models which are based
upon SAV/TAV E-PHEMT’s and include all DC blocking, bias, matching and sta-
bilization circuitry, without need for any external components.
®
For detailed performance specs
& shopping online see web site
Mini-Circuits
ISO 9001 ISO 14001 AS 9100 CERTIFIED
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 The Design Engineers Search Engine
Provides ACTUAL Data Instantly at minicircuits.com
IF/RF MICROWAVE COMPONENTS
Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”);Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Page 11 of 11
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
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